• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1106-1115
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• 2006

In this paper, the transmission characteristics and equivalent circuit model of microstrip transmission line having defected ground structure (DGS) in multilayer substrates are described fur high frequency region. In order to perform the study, the second dielectric layer is attached additionally onto the bottom(ground) plane of the basic DGS microstrip line consisted of the microstrip line and DGS. The dielectric constant and thickness of the second dielectric layer are adjusted to get various transmission characteristics and model parameters, and to analysis the effect of the second dielectric layer ultimately. According to this paper, the effect and equivalent circuits due to the attached dielectric substrate are verified separately, and this is expected to be applied to high frequency circuit design in the future.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.127.1-127.1
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• 2000

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.121-124
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• 2003

This paper shows shear wave behavior of CFRP(carton fiber reinforced plastics) composite laminates as a polar grid form to evaluate vibration pattern of ultrasonic transducers, which gives measured modelling fundamental contents of nondestructive evaluation. This modelling decomposes the transmission of a linearly polarized wave into orthogonal components through each ply of a laminate. It is found that a high probability shows between the model and measurement system in characterizing lay up of CFRP composite laminates. Also evaluating quantitatively the defects in CFRP laminates who found to be possible of normalized frequency obtained from 2D-FFT technique based on C-scan method. Thus, the technique is proven to be one of the useful means to evaluate any internal defect in CFRP composite laminates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.329-329
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• 2010

적층 액츄에이터는 우수한 압전특성 및 그 재료가 가진 고유한 특성 때문에 최근 이동통신 단말기용 햅틱 소자 및 PC 와 그 주변기기로 수요가 폭발적으로 증대되고 있으며, 향후에도 CATV 네트워크와 무선통신기기를 비롯한 디지털 통신분야로 응용분야가 확대되리라 예상된다. 적층 액츄에이터에서 발생되는 에너지는 세라믹 그린시트 두께와 전극 면적에 비례하여 변위 및 응력이 증가하게 되므로 고적층형에 대한 필요성이 증대되고 있다. 이러한 고적층 액츄에이터의 경우 소성과정에 서 warpage 및 de-lamination 같은 결함이 발생하기 쉬우므로 그린시트의 균일성 및 전극과의 matching성 확보가 중요한 요소이다. 본 연구에서는 슬러리의 분산성과 시트 내 유기물 함량 최적화 실험을 진행하여 적층 액츄에이터용 그린시트를 최적화 한 후 공정 적용성 및 저온소성 전극인 Ag-Pd 전극과의 매칭성을 확보하고자 하였다. 이러한 후막공정 기술 개선을 통해 적층 액츄에이터를 제조하여 압전 특성을 측정하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.48-48
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• 2004

RUS(공명초음파분광법)는 비파괴 검사법의 하나로서 공명 주파수와 주파수 응답을 매우 정확하게 측정할 수 있으며, 탄성학적인 성질과 이방성을 결정하는데 이용 가능하다. Paul Heyliger와 Hassel Ledbetter는 steel block의 표면 크랙과 복합적층물의 내부 손상을 검출하는데 RUS를 사용하였으며, Jay G. Saxton은 RUS를 이용하여 chops, cracks, voids등을 검출하므로써 RUS의 비파괴 검사기능으로서의 가능성을 찾았다. 현재 광섬유 응용 제품에 많이 이용되고 있는 광커넥터는 초정밀 가공을 필요로 하는 중요한 부품으로서 optical fiber, ball lense로 구성되어진다.(중략)

• Journal of Korea Foundry Society
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• v.41 no.6
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• pp.505-515
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• 2021

Creep properties of directionally solidified Ni-based superalloy CM247LC under various temperature and stress conditions have been investigated. In the heat-treated specimen, some portion of eutectic γ-γ' remained, and uniform cubic γ' was observed in the dendrites. At low temperature (750℃) and high stress condition, a large amount of deformation occurred during the primary creep, while the tertiary creep region accounted for most of the creep deformation under high temperature and low stress condition. γ' particles are sheared by dislocation dissociated into super lattice partial dislocations separated by stacking faults at 750℃. No stacking faults in γ' were found at and above 850℃ due to the temperature dependence of the stacking fault energy. Raft structure of γ' was found after creep test at high temperature of 950℃ and 1000℃. At 850℃, the deformation mechanism was shown to be dependent on the stress condition, and so rafting was observed only under low stress condition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.12
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• pp.1013-1019
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• 2016

CFRP is the composite material manufactured by the hybrid resin on the basis of carbon fiber. As this material has the high specific strength and the light weight, it has been widely used at various fields. Particularly, the unidirectional carbon fiber can be applied with the layer angle. CFRP made with layer angle has the strength higher than with no layer angle. In this paper, the property of crack growth due to each layer angle was investigated on the crack propagation and fracture behavior of the CFRP compact tension specimen due to the change of layer angle. The value of maximum stress is shown to be decreased and the crack propagation is slowed down as the layer angle is increased. But the limit according to the layer angle is shown as the stress is increased again from the base point of the layer angle of $60^{\circ}$. This study result is thought to be utilized with the data which verify the probability of fatigue fracture when the defect inside the structure at using CFRP of mechanical structure happens.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2017.04a
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• pp.146-146
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• 2017

현대의 스마트폰 및 태블릿pc등을 가능하게 만든 집적 기술 중의 하나는 3차원 집적 회로(3D-IC)와 같은 패키징 기술이다. 이러한 첨단 3차원 집적 기술은 메모리집적을 통한 대용량 메모리 모듈 개발뿐만 아니라, 메모리와 프로세서의 집적, high-end FPGA, Back side imaging (BSI) 센서 모듈, MEMS 센서와 ASIC 집적, High Bright (HB) LED 모듈 등에 적용되고 있다. 3D-IC의 3차원 모듈 제작 시에는 기존에 발생하지 않았던 여러 가지 파괴 모드들이 발생하고 있는데 Thermal/Photonic Emission 장비 등 기존의 2차원 결함분리 (Fault Isolation) 기술로는 첨단의 3차원 적층 제품들에서 발생하는 불량을 비파괴적으로 혹은 3차원적으로 분리하는 것이 불가능하므로, 비파괴 3차원 결함 분리 기술은 향후 선행 제품 적기 개발에 매우 필수적인 기술이다. 본 연구는 3D-IC 반도체의 비파괴적 내부결함 검사를 위하여 가시광선-근적외선 대역(351nm~1770nm)의 InGaAs (Indium Galium Arsenide) 계열 영상검출기 (imaging detector)를 사용하여 분광 시스템 광학 설계를 통한 초분광 영상 기반 검출 모듈을 제작하였다. 제작된 초분광 영상 기반 검출 모듈을 이용하여 구리 회로 위에 실리콘 웨이퍼가 3단 적층 된 반도체 더미 샘플의 초분광 영상을 촬영하였으며, 촬영된 초분광 영상에 대하여 Chemometrics model 기반의 분석기술을 적용하여 실리콘 웨이퍼 내부의 집적 구조에 대한 검사가 가능함을 확인하였다.