• Title/Summary/Keyword: 저항변화

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Liquefaction Assessment Variations with Regard to the Geotechnical Information Considering of Critical Depth for Liquefaction (액상화 취약심도를 고려한 지반정보에 따른 액상화 평가의 변화)

  • Song, Sungwan;Kim, Hansaem;Cho, Wanjei
    • Journal of the Korean GEO-environmental Society
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    • v.21 no.6
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    • pp.5-11
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    • 2020
  • Recently, due to the liquefaction caused by earthquakes in Pohang and surrounding areas, the importance of researches on the liquefaction assessment has increased. The possibility of liquefaction can be assessed using the geotechnical information. The cyclic resistance ratio (CRR) value used in the assessment of liquefaction can be determined by using the SPT-N values or shear wave velocity, Vs value. A study was conducted to compare the accuracy of the liquefaction assessment using these two types of geotechnical information, and concluded that the results using SPT-N values are more accurate than those using Vs values. The previous study speculated that the used Vs value was measured at a depth of 12 m uniformly without considering the critical depth of liquefaction. Therefore, 10 empirical equations that convert SPT-N values measured at critical depth of liquefaction into Vs values to confirm the validity of geotechnical information measured at 12 m points uniformly are used to assess the liquefaction possibility and the results were compared with the actual liquefaction results to confirm the accuracy. As a result, 7 out of 10 cases considering critical depth for liquefaction show higher accuracy than those not considered.

Characteristics of the sintered body of the Al2TiO5 with addition of LAS (β-spodumene) and Fe2O3 (LAS (β-spodumene)와 Fe2O3 첨가에 따른 Al2TiO5의 소결체 특성 연구)

  • Kim, Sang-Hun;Kang, Eun-Tae;Kim, Ung-Soo;Hwang, Kwang-Taek;Cho, Woo-Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.57-63
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    • 2012
  • $Al_2TiO_5$ ceramics were sintered by a solid-state reaction. LAS (${\beta}$-spodumene) and $Fe_2O_3$ were added to the $Al_2TiO_5$ composition for enhancement of sintering behavior such as mechanical strength and thermal shock resistance. The sintered body was much densified by addition of LAS and $Fe_2O_3$ because LAS formed the liquid-phase and $Fe_2O_3$ suppressed the grain growth. We have systematically investigated the sintering characteristics, microstructures, mechanical properties, and thermal shock resistance according to the change of the amount of additive. When the additive of LAS (20 wt%)-$Fe_2O_3$ was added to $Al_2TiO_5$, it confirmed that superior mechanical properties of the fracture strength of over 120 MPa and the thermal shock resistance of over $1,200^{\circ}C$ were achieved.

Electrical properties and degradation behavior of Tm2O3 doped barium titanate ceramics for MLCCs (Tm2O3가 첨가된 MLCC용 BaTiO3 유전체의 전기적 특성 및 열화거동)

  • Kim, Do-Wan;Kim, Jin-Seong;Hui, K.N.;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.278-282
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    • 2010
  • The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

Theory of the National Flag Poles As a Hegemonic State Apparatus (태극기 게양대라는 헤게모니 국가장치론 서설)

  • Jeon, Gyu-chan
    • Korean journal of communication and information
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    • v.77
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    • pp.111-136
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    • 2016
  • This paper focuses on the national "flagging" as a current affair, important phenomenon. National flags, it sees, take over varous places, control the surrounding space, and even dictate everybody's perspective by being visualized everywhere anytime. It investigates the issue of national flags and their hoisting poles as a sort of apparatuses that interpellate me as well as us into patriotic 'gookmin'. The placement, arrangement of national flag poles around the country continued throughout 2015 and particularly speeded up in October of the year is regarded as a key symbolic, symptomatic sign to read the transformation of political conjuncture. Preparing a radically conjuncturist cultural study about the changing reality, the researcher will see the flagging poles as a phenomenal result, outcoming of certain intent and plan for reconstructing the political actuality. More precisely, he will interpretate the tall omni-present poles of national flags as a dispositif of appearing the neoliberal/neoconservative capitalist state, as a apparatus of constituting and expressing the masses' psycho-ideological condition of today. The researcher, who perceives the national flag poles as a kind of ISAs. will first review the increased flagging phenomenon and related media discourses. Next, he will critically investigate the 'love our country' 'national flagging' movements organized by the above and operated from the bottom. Then, he will focus more on the very tall national flag poles built and seen around the country. Finally, he will conclude the study with a critical remark, touching briefly the case of controversy over setting a pole in the center of Seoul city square.

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Preparation and Properties of Sufonated High Impact Polystyrene(HIPS) Cation Exchange Membrane Via Sulfonation (술폰화 반응에 의한 High impact polystyrene(HIPS) 양이온교환막의 제조 및 특성)

  • Kim, Yong-Tae;Kwak, Noh-Seok;Lee, Choul-Ho;Jin, Chang-Soo;Hwang, Taek-Sung
    • Korean Chemical Engineering Research
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    • v.49 no.2
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    • pp.211-217
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    • 2011
  • In this study, ion exchange membranes were prepared using high impact polystyrene(HIPS) with various crosslinking and sulfonation time. Degree of sulfonation(DS) of sulfonated HIPS(SHIPS) membrane was increased with sulfonation time and decreased with crosslinking time. The highest value of DS was 66%. Also, water uptake and ion exchange capacity(IEC) of SHIPS membrane were decreased with degree of crosslinking and increased with sulfonation time. Then their values were 35.2% and 1.55 meq/g, respectively. Electrical resistance and ion conductivity of the membranes were showed more excellent value with sulfonation time. The maximum value of electrical resistance and ion conductivity were $0.4\Omega{\cdot}cm^{2}$ and 0.1 S/cm, respectively. It is indicated that the SHIPS membrane has the higher performance compare with Nafion 117. Durability of SHIPS membranes in a organic solvent was increased with increasing crosslinking time. The surface roughness of HIPS membranes were confirmed with SEM that was become uneven surface with progressing sulfonation.

Characteristics of Flux Decline in Forward Osmosis Process for Asymmetric Cellulose Membrane (정삼투 공정에 있어 비대칭 셀룰로오즈 막의 투과유속 감소특성)

  • Lee, Keun-Woo;Han, Myeong-Jin;Nam, Suk-Tae
    • Korean Chemical Engineering Research
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    • v.52 no.3
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    • pp.328-334
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    • 2014
  • This study examined the effect of concentration polarization on permeate flux in forward osmosis (FO) membrane process for saline and sucrose solution. The reduction in permeate flux during the FO membrane process is largely due to the formation of concentration polarization on membrane surfaces. The flux reduction due to internal concentration polarization formed on the porous support layer was larger than that due to the external concentration polarization on the active membrane surface. Water permeate flux through the FO membrane increased nonlinearly with the increase in osmotic pressure. The water permeability coefficient was $1.8081{\times}10^{-7}m/s{\cdot}atm$ for draw solution on active layer (DS-AL) mode and $1.0957{\times}10^{-7}m/s{\cdot}atm$ for draw solution on support layer (DS-SL) mode in NaCl solution system. The corresponding membrane resistance was $5.5306{\times}10^6$ and $9.1266{\times}10^6s{\cdot}atm/m$, respectively. With respect to the sucrose solution, the permeate flux for DS-AL mode was 1.33~1.90 times higher than that for DS-SL mode. The corresponding variation in the permeation flux (J) due to osmotic pressure (${\pi}$) would be expressed as $J=-0.0177+0.4506{\pi}-0.0032{\pi}^2$ for the forward and $J=0.0948+0.3292{\pi}-0.0037{\pi}^2$ for the latter.

Oxygen Permeation and Syngas Production of La0.7Sr0.3Ga0.6Fe0.4O Oxygen Permeable Membrane (La0.7Sr0.3Ga0.6Fe0.4O 분리막의 산소투과특성 및 합성가스의 생성)

  • 이시우;이승영;이기성;정경원;김도경;우상국
    • Journal of the Korean Ceramic Society
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    • v.40 no.6
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    • pp.594-600
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    • 2003
  • L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ perovskite-type mixed conducting membranes, which could permeate oxygen selectively, have been fabricated and the microstructural features developed by varying the sintering conditions have been analyzed. The effects of surface modification and the membrane thickness on oxygen permeability have been evaluated under He/air environment. With increasing a grain boundary fraction, the overall oxygen permeability decreased. The syngas (CO+ $H_2$) has been produced by partial oxidation reaction of methane with the oxygen permeated through the membrane. Methane conversion and syngas yield have been evaluated as functions of the compositional ratio of feed gas and reaction temperature. In long-term duration test for 600 h, under C $H_4$+He/air environment, L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membrane showed a highly stable performance.

Characteristic of ITO-Ag-ITO multilayer thin films grown by linear facing target sputtering system (선형대향타겟 스퍼터로 성장시킨 ITO-Ag-ITO 다층박막의 특성 연구)

  • Jeong, Jin-A;Choi, Kwang-Hyuk;Lee, Jae-Young;Lee, Jung-Hwan;Bae, Hyo-Dae;Tak, Yoon-Heung;Ye, Min-Su;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.66-66
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    • 2008
  • 본 연구에서는 ITO/Ag/ITO 다층 박막을 유기발광소자와 플렉시블 광전소자의 전극으로 적용하기 위하여 선형 대항 타겟 스퍼터(Linear facing target sputter) 시스템을 이용하여 성막하였고, ITO/Ag/ITO 다층박막의 전기적, 광학적, 구조적 특성을 분석하였다. 선형 대항 타겟 스퍼터 시스템은 강한 일방항의 자계와 타겟에 걸린 음극에 의해 전자의 회전, 왕복 운동이 가능해 마주보는 두 ITO 타겟 사이에 고밀도의 플라즈마를 구속 시켜 플라즈마 데미지 없이 산화물 박막을 성막시킬 수 있는 장치이다. 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO 전극을 DC power, working pressure, Ar/O2 ratio 에 따른 특성을 각각 분석하였다. glass 기판위에 최적화된 ITO 전극을 bottom layer로 두고, bottom ITO layer 위에 thermal evaporation 을 이용하여 Ag 박막을 6~20nm의 조건에 따라 두께를 다르게 성막하고, Ag 박막을 성막한 후에 다시 bottom ITO 전극과 같은 조건으로 ITO 전극을 top layer로 성막 하였다. 두 비정질의 ITO 전극 사이에 매우 앓은 Ag 박막을 성막 함으로 해서 glass 기판위에 ITO/Ag/ITO 다층 박막전극은 매우 낮은 저항과 높은 투과도를 나타낸다. ITO/Ag/ITO 박막의 전기적 광학적 특성을 보기 위해 hall measurement와 UV/visible spectrometer 분석을 각각 진행하였다. ITO/Ag/ITO 다층 박막 전극이 매우 얇은 두께임에도 불구하고 $4\Omega$/sq.의 낮은 면저항과 85%의 높은 투과도를 나타내는 이유는 ITO/Ag/ITO 전극 사이에 있는 Ag층의 표면 플라즈몬 공명 (SPR) 현상으로 설명할 수 있다. ITO/Ag/ITO 전극의 Ag의 거동을 분석 하기위해 FESEM분석과 synchrotron x-ray scattering 분석을 하였다. ITO/Ag/ITO 전극의 Ag층이 islands의 모양에서 연속적으로 연결되는 변화과정 중에 SPR현상이 일어남을 알 수 있다. 여기서, 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO/Ag/ITO 다층박막을 OLED 또는 inverted OLEDs의 top 전극으로의 적용 가능성을 보이고 있다.

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A Study on he Optical and Electrical Properties of $In_2O_3-ZnO$ Thin Films Fabricated by Pulsed Laser Deposition (PLD 법으로 제작한 $In_2O_3-ZnO$ 박막의 광학적 및 전기적 특성)

  • Shin, Hyun-Ho;Han, Jung-Woo;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.7
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    • pp.32-36
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    • 2008
  • In this study, $In_2O_3-ZnO$ thin films are prepared on quartz substrates by the pulsed laser deposition and their optical and electrical properties are investigated as the function of substrate temperatures ($200{\sim}600^{\circ}C$) at the fixed oxygen pressure of 200 mTorr. The XRD measurement shows that polycrystalline $In_2O_3-ZnO$ thin films are formed. In the XRD measurement, the intensity of the (400) $In_2O_3$ peak at $35.5^{\circ}$ decreases and that of the (222) $In_2O_3$ peak at $30.6^{\circ}$ increases with the increase substrate temperature up to $500^{\circ}C$. From the result of AFM measurement, the morphology of $In_2O_3-ZnO$ thin films are observed as round-type grains. The lowest surface roughness (6.15 nm) is obtained for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$. The optical transmittance of $In_2O_3-ZnO$ thin films are higher than 82% in the visible region. The maximum carrier concentration of $2.46{\times}10^{20}cm^{-3}$ and the minimum resistivity of $1.36{\times}10^{-3}{\Omega}cm$ are obtained also for the $In_2O_3-ZnO$ thin film fabricated at $500^{\circ}C$.

The Fabrication and Characterization of Diplexer Substrate with buried 1005 Passive Component Chip in PCB (PCB내 1005 수동소자 내장을 이용한 Diplexer 구현 및 특성 평가)

  • Park, Se-Hoon;Youn, Je-Hyun;Yoo, Chan-Sei;Kim, Pil-Sang;Kang, Nam-Kee;Park, Jong-Chul;Lee, Woo-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.41-47
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    • 2007
  • Today lots of investigations on Embedded Passive Technology using materials and chip components have been carried out. We fabricated diplexers with 1005 sized-passives, which were made by burying chips in PCB substrate and surface mounting chip on PCB. 6 passive chips (inductors and capacitors) were used for the frequency divisions of $880\;MHz{\sim}960\;MHz(GSM)$ and $1.71\;GHz{\sim}1.88\;GHz(DCS)$. Two types of diplxer were characterized with Network analyzer. The chip buried diplexer showed extra 5db loss and a little deviation of 0.6GHz at aimed frequency areas, whereas the chip mounted diplexer showed man. 0.86dB loss within GSM field and max. 0.68dB within DCS field respectively. But few degradations were observed after $260^{\circ}C$ for 80min baking and $280^{\circ}C$ for 10sec solder floating.

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