• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.364-366
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• 2009

광 바이오 센서 시스템에서 Trans-Impedance amplifier (TIA)는 광검출기로부터 입력단으로 들어오는 미세한 전기 신호를 원하는 신호레벨까지 증폭하는 역할을 한다. TIA는 광 바이오 센서 시스템의 감도 (sensitivity)를 결정하는 매우 중요한 회로로 저잡음, 저전력, 낮은 입력 임피던스 등의 특성이 요구되어진다. 본 논문에서는 광 바이오 센서 시스템에서 요구되어 지는 저전력, 저잡음 성능을 구현하기 위하여 regulated cascode (RGC) TIA를 설계하였다. 본 연구에서는 기존 common gate (CG) 기법의 TIA에서 전류원 역할을 하는 current source를 저항으로 대체하고, local feedback stage를 이용하는 RGC TIA를 저잡음, 저전력 특성 및 회로 면적 감소의 장점을 갖도록 설계하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.34-38
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• 2000

This paper describes design, fabrication, and performance of an ultra-high-speed and low-noise MMIC (Monolithic Microwave Integrated Circuit) preamplifier for a 10 Gb/s optical receiver. The transimpedance type 3-stage MMIC preamplifier for ultra-high-speed and low-noise was designed using an AlGaAs/InGaAs/GaAs P-HEMTs(Pseudomorphic High Electron Mobility Transistors) with 0.15${\mu}{\textrm}{m}$ length T-shaped gate. To obtain broadband characteristics, we used the inductor peaking technique, and the gate width was optimized for low noise performance. Measurements reveal that the fabricated preamplifier has the high transimpedance gain of 60 ㏈Ω and 9.15 ㎓ bandwidth with the noise figure of less than 3.9 ㏈.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.38-46
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• 1999

o.25${\mu}m$ T-shaped gate P-HEMT is fabricated and used for design of X0band three stage monolithic microwave integrated circuit(MMIC) low noise amplifier(LNA). The fabricated P-HEMT exhibits an extrinsis transconductance of 400mS/mm and a drain current of 400mA/mm. The RF and noise characteristics show that the current gain cut off frequency is 65GHz and minimum noise figure(NFmin) of 0.7dB with an associated gain of 14.8dB at 9GHz. In the design of the three stage LNA, we have used the inductive series feedback circuit topology with the short stub. The effects of series feedback to the noise figure, the gain, and the stability have been investigated to find the optimal short stub length. The designed three staage LNA showed a gain of above 33dB, a noise figure of under 1.2dB, and ainput/output return loss of under 15dB and 14dB, respectively. The results show that the fabricated P-HEMT is very suitable for a X-band LNA with high gain.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.29-36
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• 2009

In this paper, the design and implementation of LNA and down-mixer using 90 nm CMOS process are presented for 60 GHz band WPAN receiver. In order to extract characteristics of the transistor used to design each elements under the optimum bias conditions, the S-parameter of the manufactured cascode topology was measured and the effect of the RF pad was removed. Measured results of 3-stages cascode type LNA the gain of 25 dB and noise figure of 7 dB. Balanced type down-mixer with a balun at LO input port shows the conversion gain of 12.5 dB within IF frequency($8.5{\sim}11.5\;GHz$) and input PldB of -7 dBm. The size and power consumption of LNA and down-mixer are $0.8{\times}0.6\;mm^2$, 43 mW and $0.85{\times}0.85\;mm^2$, 1.2 mW, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.159-168
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• 2012

In this paper, a W-band single-chip receiver MMIC for FMCW(Frequency-modulated continuous-wave) radar is presented using $0.15{\mu}m$ GaAs pHEMT technology. The receiver MMIC consists of a 4-stage low noise amplifier(LNA), a down-converting mixer and a 3-stage LO buffer amplifier. The LNA is designed to exhibit a low noise figure and high linearity. A resistive mixer is adopted as a down-converting mixer in order to obtain high linearity and low noise performance at low IF. An additional LO buffer amplifier is also demonstrated to reduce the required LO power of the W-band mixer. The fabricated W-band single-chip receiver MMIC shows an excellent performance such as a conversion gain of 6.2 dB, a noise figure of 5.0 dB and input 1-dB compression point($P_{1dB,in}$) of -12.8 dBm, at the RF frequency of $f_0$ GHz, LO input power of -1 dBm and IF frequency of 100 MHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.15-20
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• 2012

In this paper, we designed and analysed K-band front-end module for digital microwave communication system receiver which improvement of dynamic range. We also suggested method of minimum amplified input signal level used to minimize noise figure of low-noise amplifier for High dynamic range. The designed modules consist of active mixer with conversions gain and PL-DRO with high stability and quality factor. The designed modules performance is that has the characteristics of over 54dB conversion gain, 1.3dB noise figure.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.176-183
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• 2004

In this paper, two-stage low noise amplifier(LNA) for S-band is designed and implemented using ATF54143 HEMT of HP CO. In order to get noise figure and input VSWR to be wanted, it is considered input VSWR and noise figure simultaneously in matching-circuit designing. The fabricated two-stage low noise amplifier has the gain of 27.8dB, input VSWR and output VSWR under 1.5.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.100-105
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• 2006

In this paper, a low noise amplifier(LNA) in a receiver of a low noise block down converter (LNB) for direct broadcasting service(DBS) is implemented using GaAs HEMT. The LNA is designed for the bandwidth of 11.7 GHz-12.2 GHz. The two-stage LNA consists of a input matching circuit, a output matching circuit, DC-blocks and RF-chokes. Experimental results of the LNA show the noise figure less than 1.4 dB, the gain greater than 23 dB and the flatness of 1 dB in the bandwidth of 11.7 to 12.2 GHz.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1992.06a
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• pp.641-644
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• 1992