• Title/Summary/Keyword: 저압 측정

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Study on Measurement Method of Dielectric Recovery Voltage to analysis Dielectric Recovery Characteristic of Molded Case Circuit Breaker (저압 배선용차단기 절연회복특성 파악을 위한 절연회복전압 측정기법 연구)

  • Song, Tae-Hun;Cho, Young-Maan;Ko, Kwang-Cheol
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.8
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    • pp.49-54
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    • 2015
  • Molded Circucit Breaker(MCCB) is a most widely used device to protect loads from the over-current in low power level distribution system. When the MCCB interrupts the over-current, the arc discharge occurred between fixed contact and moving contact to create hot gas. By the Lorentz force due to arc current, the occurred arc is bent to the grids. The grids extend and cool and divide it for arc extinguish. In the majority cases, the MCCB protects loads by interrupting the over-current successfully but in some cases the re-ignition is occurred by hot-gas created during process of interruption. The re-ignition arises when the recovery voltage(RV) is more higher than the recovery strength between contacts and it leads to interruption fault. Therefore to find out the dielectric recovery characteristics of protecting device has a great importance for preventing interruption fault. In this paper, we studies measurement method of the dielectric recovery characteristics considering inherent attribute of the MCCB. To measure the dielectric recovery characteristic of MCCB, we makes an experiment circuit for applying the over-current and the randomly recovery voltage. The measurement methode to find out the dielectric recovery voltage of the MCCB was established and the result was based on experiment results.

A Study on the Outages Due to Voltage Expanding in Closing High Voltage Capacitor (고압 커패시터 투입시 전압확대에 따른 사고 사례 연구)

  • Cho, Nam-Hoon;Jung, Jum-Soo;Park, Yong-Woo;Ha, Bok-Nam;Lee, Hyung-Ho
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.9
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    • pp.94-102
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    • 2008
  • Capacitor switching is essential for the economic operation and proper voltage control of KOREA electric utility distribution system. Voltage transients produced by capacitor switching (around 2.0 per unit at substation and 2.5 or less per unit at customer site, and lasting less then 1[ms]) do not have the magnitude or duration to interfere with the operation of computers, but they do disrupt the operation of adjustable speed drivers. The result of our research, ASD manufacturers should learn from the computer industry and design products that will operate satisfactory In the electrical envelopment in which they will be placed. In this case history, the inductors on the input to ADSs in order to prevent nuisance tripping from capacitor switching(and other causes within the apartment) proved to be an effective, low-cost solution.

Changes of Electrical Characteristics of Low-voltage ZnO Varistors by a lightning Impulse Current (뇌충격전류에 의한 저압용 산화아연형 바리스터의 전기적 특성변화)

  • 이종혁;한주섭;길경석;권장우;송동영;최남섭
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.4
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    • pp.793-801
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    • 2000
  • This paper presents the effect of lightning impulse current on ZnO varistors(390[V], 6.5[kA]) used in low-voltage AC mains as a protective device against transient overvoltages. The electrical characteristics of ZnO varistors are deteriorated by overtime impulse current, and a deteriorated ZnO varistor is brought to a thermal runaway and finally destroyed even in normal operating voltage. Therefore, it is important to estimate the changes of the electrical characteristics of ZnO varistors. A lightning impulse current standardized in IEC 61000-4-5 is applied to the varistors to accelerate deterioration, and the energy applied to the varistor at each time is about 12 [J]. In the experiment, various parameters such as leakage current, reference voltage are measured with the number of applied impulse current. Also, micro-structure changes of the varistors after applying the lightning impulse current of 200 times are compared. The electrical characteristics of the varistors are degraded by overtime impulse current, showing increase in leakage current and decrease in reference voltage.

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An Experimental Study on Micro Shock Tube Flow (Micro Shock Tube 유동에 관한 실험적 연구)

  • Park, Jin-Ouk;Kim, Gyu-Wan;Kim, Heuy-Dong
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2012.05a
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    • pp.350-355
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    • 2012
  • Past few years have seen the growing importance of micro shock tubes in various engineering applications. A pharma ballistic technique is one such application which uses micro shock tube to accelerate drug particles and penetrate into skin, thus avoiding the usual injection drug delivery system. But for the efficient design of such instruments requires the detailed knowledge of shock characteristics and flow field inside a micro shock tube. Due to many factors such as boundary layer, low Reynolds number and high Knudsen number shock propagation inside micro shock tubes will be quite different from that of the well established macro shock tubes. In the present study, experimental studies were carried out on a micro shock tube of 3 mm diameter to investigate flow characteristics and shock propagation. Pressure values were measured at different locations inside the driven section. From the experimental values other parameters like shock velocity, shock strength were found and shock wave diagram was constructed.

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Preparation of poly-crystalline Si absorber layer by electron beam treatment of RF sputtered amorphous silicon thin films (스퍼터링된 비정질 실리콘의 전자빔 조사를 통한 태양전지용 흡수층 제조공정 연구)

  • Jeong, Chaehwan;Na, Hyeonsik;Nam, Daecheon;Choi, Yeonjo
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.81-81
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    • 2010
  • 유리기판위에 큰 결정입자를 갖는 실리콘 (폴리 실리콘) 박막을 제조하는 것은 가격저가화 및 대면적화 측면 같은 산업화의 높은 잠재성을 가지고 있기 때문에 그동안 많은 관심을 가지고 연구되어 오고 있다. 다양한 방법을 이용하여 다결정 실리콘 박막을 만들기 위해 노력해 오고 있으며, 태양전지에 응용하기 위하여 연속적이면서 10um이상의 큰 입자를 갖는 다결정 실리콘 씨앗층이 필요하며, 고속증착을 위해서는 (100)의 결정성장방향 등 다양한 조건이 제시될 수 있다. 다결정 실리콘 흡수층의 품질은 고품질의 다결정 실리콘 씨앗층에서 얻어질 수 있다. 이러한 다결정 실리콘의 에피막 성장을 위해서는 유리기판의 연화점이 저압 화학기상증착법 및 아크 플라즈마 등과 같은 고온기반의 공정 적용의 어려움이 있기 때문에 제약 사항으로 항상 문제가 제기되고 있다. 이러한 관점에서 볼때 유리기판위에 에피막을 성장시키는 방법으로 많지 않은 방법들이 사용될 수 있는데 전자 공명 화학기상증착법(ECR-CVD), 이온빔 증착법(IBAD), 레이저 결정화법(LC) 및 펄스 자석 스퍼터링법 등이 에피 실리콘 성장을 위해 제안되는 대표적인 방법으로 볼 수 있다. 이중에서 효율적인 관점에서 볼때 IBAD는 산업화측면에서 좀더 많은 이점을 가지고 있으나, 박막을 형성하는 과정에서 큰 에너지 및 이온크기의 빔 사이즈 등으로 인한 표면으로의 damages가 일어날 수 있어 쉽지 않는 방법이 될 수 있다. 여기에서는 이러한 damage를 획기적으로 줄이면서 저온에서 결정화 시킬 수 있는 cold annealing법을 소개하고자 한다. 이온빔에 비해서 전자빔의 에너지와 크기는 그리드 형태의 렌즈를 통해 전체면적에 조사하는 것을 쉽게 제어할 수 있으며 이러한 전자빔의 생성은 금속 필라멘트의 열전자가 아닌 Ar플라즈마에서 전자의 분리를 통해 발생된다. 유리기판위에 흡수층 제조연구를 위해 DC 및 RF 스퍼터링법을 이용한 비정질실리콘의 박막에 대하여 두께별에 따른 밴드갭, 캐리어농도 등의 변화에 대하여 조사한다. 최적의 조건에서 비정질 실리콘을 2um이하로 증착을 한 후, 전자빔 조사를 위해 1.4~3.2keV의 다양한 에너지세기 및 조사시간을 변수로 하여 실험진행을 한 후 단면의 이미지 및 결정화 정도에 대한 관찰을 위해 SEM과 TEM을 이용하고, 라만, XRD를 이용하여 결정화 정도를 조사한다. 또한 Hall효과 측정시스템을 이용하여 캐리어농도, 이동도 등을 각 변수별로 전기적 특성변화에 대하여 분석한다. 또한, 태양전지용 흡수층으로 응용을 위하여 dark전도도 및 photo전도도를 측정하여 광감도에 대한 결과가 포함된다.

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A Study on the Characteristics Assessment and Fabrication of Distribution Board according to KEMC Standards (KEMC 규정에 의한 분전반의 제작 및 특성 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Fire Science and Engineering
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    • v.31 no.3
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    • pp.63-72
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    • 2017
  • This study fabricated a low-voltage 10 circuit distribution board based on the KEMC (Korea Electrical Manufacturers Cooperative) 2102-610 standard and performed a characteristics assessment of the developed 10 circuit distribution board to secure product stability. The developed 10 circuit distribution board is designed to have the characteristics of insulation materials, as well as resistance to corrosion ultraviolet radiation and mechanical impact. The developed distribution board is fabricated to have an appropriate protection class of enclosure, electric shock prevention and protection circuits, switchgear and its components, internal electrical circuits and connectors, external conduct terminal, insulation characteristics, temperature rise test, heat resistance, etc. The developed 10 circuit distribution board consists of a single phase circuit and 3-phase circuits. It is possible to measure in real time the leakage current generated from the load distribution line by installing a sensor module at the load side of each of the branched switchgears. In addition, it is possible to increase a circuit according to the use and purpose of the load and to also manage and check the load in real time. Temperature rise tests were performed on the developed 10 circuit distribution board at 18 places including the inlet connection, main circuit and distribution circuit bus bars and bus bar supports, etc. The highest temperature of $65.3^{\circ}C$ was measured at the R-Phase of the connection of the MCCB power supply for the branch circuit bus bar and a temperature rise of $61.6^{\circ}C$ was measured at the T-Phase of the load side. When applying thermal stress to an MCCB for 6 hours at $180^{\circ}C$ using a heat resistant experimental device, it was found that the actuator lever was transformed and moved in the tripped state.

Development of advanced technology shoes combined conical top foundation mechanism (팽이기초 메카니즘을 융합한 신개념 신발 개발 연구)

  • Kim, Yeon-Deok;Lee, Ji-Hyun;Kim, Sang-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.3
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    • pp.724-731
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    • 2016
  • This paper presents the interdisciplinary study of a combined mechanism on the interactions between ground and foot using bioengineering and geotechnical engineering. A new mechanism of advanced technology shoes, which can be made safe with a comfortable gait on both soft and hard ground, were developed combining the mechanism of conical top foundation. The experimental tests were carried out to verify the developed shoes. The prototype shoes and test grounds were designed and produced to perform the tests. The general existing shoes and advanced technology shoes were used to measure the pressures re-acting the sole during the tests by a special measurement system. The results clearly showed that the pressures acting on the sole of advanced technology shoes were distributed uniformly compared with that of the existing shoes, and were in good agreement with theoretical approach of the new mechanism. Therefore, the advanced technology shoes could allow a safe gait ergonomically by a new mechanism on any ground type. The load transfer could occur by the interaction between ground and shoes. In addition, these results are expected to be useful for the development of an interdisciplinary study of a new mechanism in the future.

A Study on the Adsorption Characteristics of Nitrogen and Oxygen on Ion Exchanged Zeolite Adsorbents (이온교환된 제올라이트 흡착제의 질소 및 산소 흡착 특성 연구)

  • Jeong, Heon-Do;Kim, Dong-Sik;Kim, Kweon-Ill
    • Applied Chemistry for Engineering
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    • v.16 no.1
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    • pp.123-130
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    • 2005
  • Zeolite X adsorbents with large surface area were prepared for using oxygen PSA adsorbent. Selective adsorption performance of nitrogen on the synthesized zeolite X adsorbent was improved by the cation exchange of adsorbent. The zeolite X which had over $650m^2/g$ surface area was synthesized at the conditions of $SiO_2\;:\;Na_2O\;:\;H_2O\;:\;Al_2O_3$ = 2.5 : 3.5 : 150 : 1 mole ratio, $98^{\circ}C$ temperature and 18 h synthesized time in 50 L reactor. The metal ions Li, Ag, Ca, Br, Sr, etc. were investigated for ion exchange with zeolite X. Ag ion was showed the highest ion exchange rate among these metal ions and all metal ions were exchanged with Na ion at equivalent rate. Compared with the NaX adsorbent, the ion exchanged zeolite X adsorbent remarkably improved its adsorption performance of nitrogen at the conditions of $10{\sim}40^{\circ}C$ temperature and 0~9 atm pressure. At an equilibrium pressure under 0.5 atm, adsorption performance of nitrogen on the ion exchanged zeolite adsorbent increased in the order of Ag > Li > Ca > Sr> Ba > K, whereas at an equilibrium pressure over 1 atm showed in the order of Li > Ag > Ca > Sr > Ba > K. Nitrogen/oxygen separation factor of Li ion exchanged zeolite X adsorbent was 13.023 at the partial pressure of nitrogen/oxygen gas mixture similar to air and $20^{\circ}C$ adsorption temperature.

The Effects of Plantar foot Pressure and EMG Activation of Neck, Lumbar and Low Limbs by Using Carrier during Walking (처네(앞.뒤) 사용 방법이 보행 시 목, 허리 및 다리 근육 활성도와 족저압에 미치는 영향)

  • Lee, Sang-Yeol;Chang, Jong-Sung;Lee, Myoung-Hee
    • Korean Journal of Applied Biomechanics
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    • v.19 no.2
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    • pp.237-244
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    • 2009
  • The purpose of this study was to investigate the changing plantar foot pressure and muscle activation of neck, lumbar and low limb by different way of the using carrier during walking. Twenty healthy and young females who brought up infants and had no musculoskeletal disorders of neck, lumbar and low limb were instructed to perform plantar foot pressure and muscle activation of neck, lumbar and low limb during different ways of the using the carrier and walking. Plantar foot pressures were recorded by RS-scan system(RS scan Ltd, German), muscle activation were recorded by ProComp infinitiTM(Thought Technology Ltd, Canada). The data collected by each way of the using carrier and One-way ANOVA was used to analyze. The results indicated that there was a significant increase on erector spinae muscle activation and pressure of great toe zone by using anterior carrier and there was a increase on activation of paraspinal muscle and metatarsal zone by using posterior carrier. Therefore, the way of using carrier could be influenced upon structure and function of the foot and muscle activation.

Metamorphic Evolution of the central Ogcheon Metamorphic Belt in the Cheongju-Miwon area, Korea (청주-미원지역 중부 옥천변성대의 변성진화과정)

  • 오창환;권용완;김성원
    • The Journal of the Petrological Society of Korea
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    • v.8 no.2
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    • pp.106-124
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    • 1999
  • In the Cheongju-Minwon area which occupies the middle part of the Ogcheon Metamorphic Belt, three metamorphic events(M1, M2, M3) had occurred. Intermediate P/T type M2 regional metamorphism formed prevailing mineral assemblages in the study area. Low PIT type M3 contact metamorphism occurred due to the intrusion of granites after M2 metamorphism. M1 metamorphism is recognized by inclusions within garnet. During M2 metamorphism, the metamorphic grade increased from the biotite zone in the southeastern part to the garnet zone in the northwestern part of the study area. This result is similar to the metamorphic evolution of the southwestern part of the Ogcheon Metamorphic Belt. Garnets in the garnet zone are classified into two types; Type A garnet has inclusions whose trail is connected to the foliation in the matrix and Type B garnet has inclusion rich core and inclusion poor rim. Type A garnet formed in the mica rich part with crenulation cleavage whereas Type B garnet formed in the quartz rich part with weak crenulation cleavage. In some outcrops, two types garnets are found together. Compared to the rim of Type A garnet, the rim of Type B garnet is lower in grossular and spessartine contents but higher in almandine and pyrope contents. In some Type B garnets, the inclusion poor part is rimmed by muddy colored or protuberant new overgrowth. In the inclusion poor part and new overgrowth, a rapid increase in grossular and decrease in spessartine is observed. However, the compositional patterns of Type A and B are similar; Ca increases and Mn decreases from core to rim. Two types garnets formed mainly due to the difference of bulk chemistry instead of metamorphic and deformational differences. The metamorphic P-T conditions estimated from Type A garnets are 595-690 OC15.7-8.8 kb, which indicates M2 metamorphism is intermediate P/T type metamorphism. On the other hand, a wide range of P-T conditions is calculated from Type B garnets. The P-T conditions from most Type B garnet rims are 617-690 OC16.2-8.9 kb which also indicates an intermediate P/T type metamorphism. However, at the rim part with flat end or weak overgrowth, grossular content is low and 573-624OC14.7-5.8 kb are estimated. The P-T conditions calculated from plagioclase and biotite inclusions in garnet are 460-500 0C/1.9-3.0 kb. The P-T conditions from rim part with weak overgrowth and inclusions within garnet, indicate that low P/T type M1 regional metamorphism might have occurred before intermediate P/T type M2 regional metamorphism. The P-T conditions estimated from samples which had undergone low PIT type M3 metamorphism strongly, are 547-610 0C/2.1-5.0 kb.

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