• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.657-660
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• 1999

In this paper, we have investigated YMnO$_3$ bulk ceramics, which was made by Mixed oxide method, with Y/Mn ratios of 0.80/1.20, 0.90/1.10, 0.95/1.05, 1.00/1.00, 1.05/0.95 and 1.10/0.90. The samples crystall structure with Y/Mn ratios of 0.95/1.05 was hexagonal structure. The physical properties of YMnO$_3$ ceramics were divided into two groups, the sample with Y/Mn ratios of 0.80/1.20, 0.90/1.10 and 0.95/1.05 is classified to Mn rich sample, and with Y/Mn ratios of 1.00/1.00, 1.05/0.95 and 1.10/0.90 is classified to Y rich sample. The sintering and dielectric properties of this sample were summarized as following sintering density of Mn rich sample was increased. Dissipation factor of Mn rich sample was small The dielectric constant, dissipation factor of sample with Y/Mn ratio (0.90/1.10) were 37, 0.017 respectively at measured 1MHz

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.325-328
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• 1999

The physical and electrical properties of $\textrm{Ba}_1$ $_{x}\textrm{Sr}_{x}$($\textrm{Mg_{1/3}Nb_{2/3}}$)$\textrm{O}_3$ (x =0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics were investigated. The Bal $_{x}\textrm{Sr}_{x}$($\textrm{Mg_{1/3}Nb_{2/3}}$)$\textrm{O}_3$ systems were shown that the hexagonally ordered superlattices were increased with increasing x values. The relative densities of all samples were over 97% theoretical densities. The dc resistivities of samples were $10^{13}$ - $10^{14}$$\Omega\textrm{cm}$at room temperature, these values were nearly constant at 130(x=0)-$230^{\circ}C$ (x=l). However, the resistivities of samples decreased rapidly above those temperature and their activation energies were from 1.0 to 1.52 eV. The relative dielectric constant was 33(BMN) and 30.6(SMN) respectively. And the highest value was shown at x=0.4 and the value was 34.3. The temperature coefficient of dielectric constant was -61 ppm/$^{\circ}C$(BMN) and 79 ppm/$^{\circ}C$ (SMN) respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.57.2-57.2
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• 2009

퍼클로레이트 이온($ClO_4^-$)는 자연적으로 혹은 인공적으로 만들어지며 퍼클로릭산이나 암모늄 퍼클로레이트나, 포타슘 퍼클로레이트 혹은 소듐퍼클로레이트 염의 형태로 존재하며, 물에 아주 잘 녹고, 끓여도 제거되지 않으며, 활성 탄소와 같은 광물에도 흡착 되지 않는 성질로 인해, 기존 물리적인 정수 방법으로는 제거하기 어렵다. 또한 우리 몸에 흡수되면, 요오드가 갑상선에 흡수되는 작용을 방해하여 갑상선 기능장애를 초래한다. 이러한 퍼클로레이트 이온의 제거방법으로는 이온교환법이나 생물학적 방법 등이 개발되어져 있으나, 제거 시스템에 이동 및 안전한 농도까지 제거 등의 문제점으로 인한 퍼클로레이트 이온을 환원시키는 촉매 환원 반응에 의한 퍼클로레이트 이온 제거 기술 개발이 필요하다. 이런 촉매 환원에 필요한 수소 환원제를 발생시키기 위해서, 본 연구에서는 Carbon felt 위에 DC magnetron sputtering에 의한 thin film $TiO_2$과 regine을 이용한 powder $TiO_2$ 시편을 제작하였다. 이렇게 제작 된 $TiO_2$/Carbon felt의 미세구조 및 특성은 XRD, SEM, UV-vis-NIR 등을 통하여 분석하였다. UV 조사에 의해 $TiO_2$/Carbon felt 시편의 산소와 수소 발생과 DC bias의 걸어주었을 때 산소와 수소 발생 차이 등을 비교하였고, 이에 따른 퍼클로 레이트 이온의 분해 영향을 알아보았다.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.726-732
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• 1998

가압 경수로형 원전에 사용되는 Alloy 600 증기발생기 전열관재료의 입계응력부식균열 거동에 미치는 냉간변형의 영향을 1차 냉각수 모사조건에서 정속인장시험방법으로 조사하였다. 인장 냉간변형은 응력부식균열을 크게 가속화 시키지는 않았으며 변형량이 25%이상인 경우에는 응력부식균열이 발생하지 않았다. 이 현상은 냉간 변형량 및 형태에 따른 미소변형 및 응력의 불균질성에 영향을 받는 것으로 사려되며 응력의 크기는 직접적인 영향을 주지 않는 것으로 보인다. 국부적인 큰 응력구배가 존재하는 경우 균열의생성 및 성장이 현저히 가속화되었는데 이는 원전 1차측 응력부식균열 기구가 응력구배에 의존하는 과정과 연관되어 있다는 증거이다. Hump 시편을 이용한 정속인장시험방법은 짧은 실험기간내에 원전 1차측 응력부식균열 특성을 평가할 수 있는 방법이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.188-191
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• 2000

The properties of piezoelectric and dielectric for 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$x/Ti$\_$1-x/O$_3$ compositions have been investigated. In the composition of 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$0.51/Ti$\_$0.49/O$_3$, the values of k$\_$p/ and $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/ are maximized, but Q$\_$m/ was minimized (k$\_$p/=56.5[%], Q$\_$m/=1130, d$\_$33/=258[pC/N], $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/=1170). The grain size was suppressed and the uniformity of grain was improved at the 1100[˚C]. Also, we can see the dielectric constants variations between the before poling and after poling. This effect results from the effect(increase element of dielectric constants) between dipole switching and electrostriction inducing stress and dipole direction to the poling orientation(decrease element of dielectric constants). At x=0.51, we can find MPB(morphotropic phase boundary).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.137-142
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• 2000

The sintering and electrical properties of YMnO3 bulk ceramics were investigated with Y/Mn ratios(Mn rich ;0.80/1.20, 0.90/1.10, 0.95/1.05, and Y rich ; 1.00/1.00, 1.05/0.95, 1.10/0.90). The crystal structure of samples showed a hexagonal structure, and the sample of Y/Mn = 0.95/1.05 indicated higher c-axis oriented peak than other samples. In the case of Mn rich samples, the grain sizes were about 7.8${\mu}{\textrm}{m}$ and they showed 95% of theoretical density. Whereas, in the case of Y rich samples, the grain sizes were about 2.3${\mu}{\textrm}{m}$ and they showed 86%. The dielectric constant and dissipation factor of the Mn rich samples were smaller than those of the Y rich samples. The samples of Y/Mn = 0.90/1.10 showed the lowest a dissipation factor, and their dielectric constant, dissipation factor and Curie temperature were 36, 0.0136 and 68$0^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.541-545
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• 2007

The critical current degradation behaviors of multifilamentary Bi-2223 superconducting tapes under pressurized liquid nitrogen were investigated using a r-shaped sample holder which gives a series of bending strains to tape. Three kinds of externally-reinforced Bi-2223 tapes with different hermeticity were used as samples. The tape with the thicker reinforcement layer had a better bending strain tolerance of $I_c$, but when the bending strain was calculated at the outermost filament, the $I_c$ degradation behavior became identical. For all samples, $I_{c0}$ decreased with the increase of applied pressure, but the $I_c$ degradation behavior with bending strain at each pressure level was similar. Furthermore, after depressurization from 1 MPa to atmospheric pressure, $I_c$ was completely recovered to its initial values. When the samples were warmed up to room temperature after pressurization tests, the ballooning damage occurred at lower bending strain regions. The region where ballooning was observed was identical to the one where the significant $I_c$ degradation occurred.