• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.406-409
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• 2001

The conductivity properties and synthesis of LaNiO$_3$ ceramics from La$\sub$1+$\delta$/NiO$_3$($\delta$=--0.06, 0, 0.06) were investigated. A single perovskite phase was realized at 800$^{\circ}C$. La$_2$NiO$_4$ and other unexpected oxide were observed at 1000$^{\circ}C$. The Microstructure was showed clearly that it is a low density porous material. LaNiO$_3$ ceramic showed a metallic conductivity. The conductivity of La rich samples had a higher value than the La poor samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.79-82
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• 1994

We have manufacture Copper-tetra-tert-butylphalocyanine (CuTBP)Langmuir-Blodgett(LB) films, which is known be sensitive to NO$_2$ gab. A response of these films to the NO$_2$ gab was studied. A surface pleasure of 25mN/m was obtained as a proper one for a film deposition. A deposited film status was identified with Uv/visible absorption spectra, ellipsometry measurements, and current-voltage(I-Y) characteristics. The NO$_2$ gas response experiments under 200ppm conducentration show that there are increment of electrical conductivity by 12 times, 5 seconds of response time, and 5 seconds of response time, and 90 seconds of recovery time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.75-78
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• 1994

Organic ultra thin films about 500${\AA}$ in thickness are fabricated by LB(Langmuir-Blodgett) technique and their gas detect properties are investigated. The LB films deposited are made of the specimen named as N-docosyl pyridinium(TCNQ) and the deposition is verified by capacitance conductivity measurement. From the study of gas detect properties with I-V characteristics and UV spectrum we have found that their conductivities were increased about 3 times of magnitude and peaks of UV spectrum were decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.583-586
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• 2000

The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.1-4
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• 1997

In this study, ruin films of Octla-dodecyloxy copper-phthalocyanine were prepared by Langmuir-Blodgett (LB) method and characterirzed by using UV-Vis absorption spectroscopy and ellipsometry. [1],r[2] Optimal transfer condition of LB films was investigated and preliminary results of current-voltage(1-V) characteristics of these films exposed to NO$_2$ gas as were discussed functions of film thickness, temperature and NO$_2$ gas concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.163-166
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• 1997

Electroluminescent(EL) dcvice based on organic thin layers have attracted lots of interests because of thier possible application as large-area light-emitting displays. It was known that MEH-PPV and 1, 1, 4, 4, -Tetraphenyl-1, 3-butadiene(TPB) has red and blue emission peak at 580nm and 480nm, respectively. In this study, MEH-PPV films and TPB films were prepared by spin coating and vacuum deposition method, respectively. Films of MEH-PPV and TPB double layer were also prepared by the same method. Photoluminescent(PL) characteristics of these single and doubler layers were investigated, where a cell structure of glass substrate/ITO/MEH-PPV and/or TPB/Al was employed. It was found that the photoluminescent efficiency of TPB film was higher than that of MEH-PPV film with a single layer and also with a double structure. These films have also different I-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1055-1059
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• 1998

The correlation between the propagation of electrical tree and distributions of partial discharge(PD) pulses accompanying with electrical tree of bush type in low density polyethylene were discussed. We measured the growth of electrical tree by using optical microscope and PD data simultaneously. The PD data detected and analyzed were PD magnitude, repetition rate, average discharge power, average phase angle, and $\psi$-q-n distribution pattern. The average discharge power and repetition rate of PD had good linear relation with area of tree. Repetition rate and peak discharge magnitude and width of discharge phase angle increased with the tree.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.128-131
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• 1997

기본 조성식 M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계), M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계)의 식에서 x를 0.0,0.025,0.1,0.2로 변화시키고, 하소온도 80$0^{\circ}C$, 소결은도를 l10$0^{\circ}C$~12$50^{\circ}C$로 $50^{\circ}C$간격으로 변화 시켰을 때와 Mn계와 Mg계를 1:1로 흔합하였을 때, F $e_2$ $O_3$의 과잉 양이 증가할수록 비저항은 감소하였고, 저항온도계수 $\alpha$는 밀도와 비례하는 관계를 나타내었으며, B정수는 4600(K)에서 10500(K)의 범위를 나타내었다. 본 조성의 실험으로써 Mn-Ni-Co계 서미스터의 대체가 가능함을 확인할 수 있었다.있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.579-582
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• 2000

This paper described on the fabrication of SOI(Si-on-insulator) structures with buried cavities by SDB technology and eletrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annaling(100$0^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated the SDB SOI structure with buried cavities as well as an accurate control and a good flatness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.13-16
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• 2000

(PbS)$_{1-x}$ -(CuS)$_{x}$ thin films(x=0, 0.5, 1) were grown on glass substrates by using a chemical bath deposition method. The molecular ratio of Pb to Cu for the PbS-CuS thin films(x=0.5) was measured about 7:3 by using EDX and XRF. The resistivity of non-annealed (PbS)$_{1-x}$ -(CuS)$_{x}$ thin films was about 10 $\Omega$ . cm. However, after annealing, the resistivity of PbS showed a little change, while PbS-CuS and CuS significantly decreased in the range of 0.002 to 0.005$\Omega$.cm. PbS was p-type and CuS was n-type.-type.