• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.700-703
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• 1999

Thls paper describes the process of corona discharge in $SF_6$ gas. The discharge characteristm such as electric field distribution, electron density, ion density and current denslty distribution are considered as time go by, The result show that difference between electronegative gas and nonelectronegative gas.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.861-865
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• 1998

A plate-type linear ultrasonic motor using logitudinal and bending multi-vibration mode was designed and fabricated for the application to card-forwarding device. The stator consisted of PZ-PT-PMS piezoelectric ceramic plate and stainless steel. The performances of the motor were measured. As the experimental results, no-load speed of the motor was 0.6m/s when applied voltage was $80\textrm{V}_{rms}$ in resonance frequency. Starting torque was 1.4 mNm and maximum efficiency was 1.2%.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.681-687
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• 2003

The syntheses of LaNiO$_3$Perovskite crystalline phase from mixtures of La$_2$O$_3$and NiO via it mechanochemical(used planetary mill) and a wet ball mill process were investigated. A single and stable LaNiO$_3$perovskite crystalline phase was successfully prepared by using a heat free mechanochemical process which produced a fine amorphous powder, while that phase was not formed in a wet ball mill process which needed heat treatment ranging from 500 to 150$0^{\circ}C$ and produced a coarse powder. It was shown that the LaNiO$_3$ceramics made of the mechanochemically synthesized powder possesed a good metallic characteristic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.36-40
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• 1988

High TC Y-Ba-Cu-O Superconductors were fabricated by sintering, sinter+HIP encapsulation. Specimens were sintered at 920$^{\circ}C$∼960$^{\circ}C$. A part of sintered specimens were treated by HIP, and HIP conditions were 150 MPa, 880$^{\circ}C$, 30min under the Ar atmosphere. The relative density of HIP specimens was increased 5∼8% in comparison with sintered one(90∼93% relative density). X-ray analysis represented the orthorhobic-tetragonal phase transition with annealing condition. Tc measurements showed a sharp drp within 3$^{\circ}C$, 91K onset and 89K offset. Transport current density(Jc) of sintered specimens showed typically∼159A/㎤ but that of sinter+HIP encapsulation was decreased to∼89A/㎤ because of insufficient oxygen diffusion, Hardness(H) and Toughness(Kc) were increased to 38GPa; and 2.9 MPam$\^$$\frac{1}{2}$/, respectively.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.546-551
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• 1998

$Mn{1-X}Fe{2+X}O_4, Mg_{1-X}Fe_{2+X}O_4$ (x=0.0, 0.025, 0.1, 0.2) for negative temperature coefficient (NTC) thermistor was prepared by calcination at $800^{\circ}C$ and sintering at form 1100 to $1250^{\circ}C$ with $50^{\circ}C$ intervals. The best linear property was obtained in the Mn-based sample sintered at $1200^{\circ}C$ with x=0.0 composition. Temperature coefficient of resistance, $\alpha$, was $-5.6%/^{\circ}C$ in the Mn-based sample, $-5.2%/^{\circ}C$ in the MM-based sample, and $-1.6%/^{\circ}C$ in the Mg-based sample. thermistor parameter, B, was in the range of 2665~7780 K. The results show the possibility that Mn-Ni-Co based thermistor could be substituted by the composition used in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.253-257
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as large-area flat pan디 display. In this study, current-voltage (I-V) characteristics of MEH-PPV thin films was investigated using various metal as a top electrode, where MEH-PPV thin films were prepared on 170 substrate by spin coating method and various metal such as Al, Ag, In, MgIn was deposited on MEH-PPV thin films as a top electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.609-612
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• 1999

Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)$_3$(bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.399-402
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• 1999

In this paper, a new method for calculating capacitance in arbitrarily shape structure is Presented. This new approach based on divergence theorem of Gauss\`s law is acheive by Surface-Contacted Element(SCE) for Gaussian surface. To evaluate accurate capacitance value in nonuniform electric field. in two dimensional analysis the interpolation using the elements which contact one nod (PE: Point-Element) or two nod (FE: Face-Element) is employed. Because the elements contacted with surface are very small compared with total elements in analytic model, SCE method has shorter computing time to calculate capacitance. This proposed method is verified by comparing the simulated results with value obtained by analytic method.

• 전산구조공학
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• 제7권3호
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• pp.115-122
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• 1994

불확정 구조계획의 선형 고유치 문제는 재료정수나 경게조건 및 외부하중 등에 결정론적으로 사용할 수 없는 확률량을 포함하고 있다. 변동량을 내포한 고유치 문제의 해석은 기대치에 대한 지배 방정식과 변동량 결정방정식을 고려해야 한다. 비선형성이 심한 구조계를 선형화할 대 일차 및 이차 변동값을 반영함으로 고유치의 정도를 향상시킬 수 있다. 매개변수에 불확정성을 포함한 고유치 문제는 최적설계 정식화에서 변동된 값을 고료해 줌으로 신뢰성 있는 설계가 된다. 최적설계 알고리즘 중에는 목적함수와 제한 조건식의 설계 민감도를 요한다. 이차 기울기에 근거를 둔 최적설계 수행시에 변동량에 고려하여 제한식으로 설정하고, 설계 민감도를 구할 수 있는 방법을 제시하였다.