• Journal of KSNVE
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• v.9 no.3
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• pp.466-471
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• 1999

The prediction methods of diffraction field in barrier has beenreported much about the infinite length barrier and it is very few work that reasonable sound source was used in experiment. This study, however, has worked about the several model barrier with acoustic scale model experiment. In the case of scale model experiment, it is difficult to use the kind of source with sufficiently characteristics. A spark discharge sound source with the high repeatability, broad band spectra, small size and omnidirectivity has veen used for the prediction of diffraction field. Several model barriers with different length on the ground were considered for the experiment and compared with the the results calculated by the approximation.

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1041-1046
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• 1997

본 연구에서는 분자선 에피택시 방법으로 비대칭 AIAs/GaAs(001)이중 장벽, 삼중장벽구조를 성장한 수 이를 이용하여 2단자 소자를 제작하여 전기적 특성을 분석하였다. 에피층은 쌍결정 X-ray회절 분석과 단면투과 전자현미경을 이용하여 결정성 및 격자 정합성을 확인하였다. 전기적 성능을 보다 향상시키기 위해 n-GaAs에 대한 오믹 접촉등의 소자 제작 공정을 최적화하였다. 삼중장벽 구조를 이용하여 제작한 소자의 전기적 특성 연구 결과 두개의 주요 공진 터널링 전류 피크 사이에 X-valley에 의한 구조를 확인할 수 있었으며, 이중 장벽구조에 제2의 양자우물 구조를 첨가함으로써 낮은 전압위치에서 전류 피크가 향상하는 결과를 얻었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.49-50
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• 2013

In wireless environment, to provide more efficient service area is need to maintain proper location of wireless LAN AP. Since structural effect corresponding to location of arbitrary scatterers must be considered. Using FDTD method, an obstacle in scattering field should be considered and its diffraction effect for some cross wall is estimated between transmitter and receiver point.

• Journal of KSNVE
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• v.8 no.1
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• pp.187-194
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• 1998

In order to predict the train noise propagation from a level railroad, this paper presents the model of train noise source and the prediction model based on the results by using the sound intensity method. The prediction model gives the effects of geometric attenuation, ground attenuation, and barrier attenuation of noise. There are several principal assumption in developing model: (a) the train noise is primarily rolling noise; (b) the rail head and wheels are in good condition; (c) the height of source is 10cm above track; (d) the directivity pattern of train noise sources is a dipole source. Calculated results based on this model are compared with available field data and good agreement has been obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.158-158
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• 2010

본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.365-370
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• 2010

The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/$Al_{0.3}Ga_{0.7}As$ multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.13-14
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• 2002

우물두께가 각각 1.5, 3.0, 4.5, 6.0 nm이고 장벽두께가 7.5 nm로 일정한 10 주기의 In0.15Ga0.8SN/GaN 다중 양자우물 구조(MQW)의 구조적 특성변화를 HRXRD(high resolution X-ray diffraction)를 이용하여 조사하였다. 구조적 특성변화를 살펴보기 위해 GaN (0002) 회절면의 ω/2θ-scan과 ω-scan 그리고 GaN (10-15) 역격자점 주위의 산란강도 분포도를 측정하였다. 우물두께가 증가할수록 시료의 평균변형률이 증가하였고, 우물두께가 1.5, 3.0, 4.5 nm인 MQW는 GaN 에피층과 격자정합을 이루며 성장된 반면 6.0 nm인 시료에서는 격자이완이 나타나 결정성이 저하된 것을 확인할 수 있었다. (그림 1) 따라서 본 연구에서 사용한 시료에서 6.0 nm의 우물두께가 격자이완의 임계두께임을 알 수 있었다. PL(photoluminescence) 스펙트럼 결과를 통하여 6.0 nm 우물두께의 시료가 다른 시료에 비하여 상대발광강도가 낮아지는 것을 관찰하였으며 이것은 XRD를 이용한 시료의 결정성 변화와 잘 일치하였다. (그림 2) 따라서 PL 발광강도는 격자이완에 의하여 생성된 결함에 의하여 영향을 받는 것을 알 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.125-132
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• 2018

The direct synthesis of $C_2$ chemical directly from methane was studied by employing catalysts with ordered mesopores in a dielectric barrier discharge plasma reactor. The reaction was carried out using MgO/OMA (ordered mesoporous alumina), $MgO/{\gamma}-Al_2O_3$ and $MgO/{\alpha}-Al_2O_3$ as catalysts. When MgO/OMA was applied, it showed excellent performance in the plasma reactor using pulse-type power supply and the selectivity of $C_2$ chemicals was measured as 67%. The effects of metal oxide type, textural property of support, alumina phase and power supply type on catalytic performance were investigated especially in terms of $C_2$ chemical formation. BET (Brunauer, Emmett, Teller), X-ray diffraction, transmission electron microscope and thermogravimetric analysis were used to investigate the characterization of the catalyst before and after the reaction.