• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.306-311
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• 1999

$La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.231-235
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• 2005

We studied the microstructural evolution of ZrTM-Al (TM=Nb and Ti) alloy films, MR and electrical properties of the MTJ with $ZrTM-AlO_x$ barrier as a function of Zr/TM ratio. We observed that the ternary-oxide barrier reduced the TMR ratio due mainly to the structural defects such as the surface roughness. The change in TMR ratio and $V_h$ with Zr/TM ratio exactly corresponds to the systematic changes in the microstructural variation. Although the MTJ with ternary oxide reduced the TMR and the electrical stabilities, the junction resistances decreased as the Ti and Nb concentration increased due to the band-gap reduction caused by the formation of extra bands

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.31-37
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• 1997

The magnetoresistance and the saturation field behavior of the Co-Ag nano granular films as a function of the composition and the ferromagnetic underlayer and overlayermaterials were investigated. The maximum magnetoresistance of 23% and the saturation field of 2.3 kOe at room temperature were obtained in the as-deposited 3000$\AA$ $Co_{30}Ag_{70}$ single alloy films. The magnetoresistance and the saturation field of 100$\AA$ $Co_{30}Ag-{70}$ alloy film were 3.65 % and 3.0 kOe respectively. Those of the sandwiched films with 200$\AA$ Fe were 3.3 % and 1.23 kOe respectively. The saturation field of the sandwiched alloy films could be reduced by the exchange coupling between the ferromagnetic layers and the alloy layer. The effective depth of the exchange coupling was approximately 150$\AA$ in each Fe layer. Among the Fe, Co, and FeNi, the most effective materials to reduce the saturation field of the sandwiched alloy films was Fe.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.638-642
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• 2014

In this study, we investigate on the crystal microstructure and magneto-resistance (MR) change of Bismuth(Bi) thin films for annealing process, in order to apply Bi thin films to the spin electronic devices. As-prepared Bi thin films show the randomly oriented find grains whose size was measured to about 100 nm and the very low MR (4.7 % at room temperature) while careful annealing results in not only grain growth up to ${\sim}2{\mu}m$ but also drastic MR improvement (404 % at room temperature). The drastic change in the MR after applying the annealing process is attributed to the grain growth decreasing grain boundary scattering of electron. Therefore, in this study, we confirm the annealing effect for the grain boundary formation and MR improvement of Bi thin films, and demonstrate the feasibility of spin electronic devices.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.210-219
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• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.60-61
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• 2002

현재 Magnetic Tunnel Junction는 고밀도 자기저항 헤드 및 비휘발성 메모리(MRAM)등의 자기저항 특성을 이용한 소자에 응용하기 위해 많은 연구가 진행되고 있다[1]. 하지만 Magnetic Tunnel Junction(MTJ)을 실제 소자로서 제작하여 사용하기 위해서는 smooth하고 pinhole이 없으며, 절연층 내부에 disorder나 defect가 없는 절연층을 형성해야 한다. (중략)

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.2
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• pp.13-17
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• 2007

Magnetoresistance(MR) in ferromagnetic thin film to make thermal evaporating method in various angle configurations were observed. The degree of transition from positive magnetoresistance to negative magnetoresistance is observed to 34 degree in anisotropy magnetoresistance experiment. In the angle configuration such that the film sample was placed perpendicular to the magnetic field, the difference of FDMP and degree of transition in iron and nickel films is observed due to the fundamental difference of magnetic easy axis.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.340-346
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• 1994

Change in the electrical resistance of artificial superlattice under two magnetic fields-the main and the secondary magnetic field-has been studied with respect to each magnetic field strength in (200) textured Co/Cu artificial superlattice. When the two magnetic fields were applied in the same direction, lateral shift of the magnetoresistance curve occurred, while splitting phenomenon of the maximum resistance appeared when the two magnetic fields were applied at the right angle. When the angle between the two magnetic fields became $45^{\circ}$ shifting as well as splitting occurred in the magnetoresistance curve. This magnetoresistance behavior with double magnetic fields in the artificial superlattices could be explained with the macroscopic spin alignment model newly suggested in this work.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.619_620
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• 2009

본 논문은 자기장을 이용하여 전류를 안정화시켜 정밀전류를 발생 시킬 수 있는 장치에 관한 연구이다. 일반적으로 전류를 안정화 시키는 방법은 전류회로에 직렬로 저항을 연결하여 저항 양단에 유도되는 전압을 측정하여 전류를 제어하는 방법을 많이 사용한다. 그러나 이 방법은 정밀한 전류를 제어하기 위하여 직렬로 연결되는 저항값이 커야하며, 또한 전류에 의해 발생되는 열로 인해 저항값이 증가하기 때문에 정밀한 제어가 어렵다. 이러한 단점을 보완 할 수 있는 방법으로 전류회로에 직렬로 코일을 연결하여 전류가 변화면 코일속에 자기장이 변화는 원리를 이용하여 전류를 안정화시켜 정밀전류를 발생 할 수 있다. 본 연구에서는 저자기장 국가표준 확립 및 물리고유상수인 양성자 자기회전비율 측정을 위해 원자자기공명 방법을 이용하여 직류전류를 1 A 범위에서 $0.1{\mu}A$ 수준으로 안정화 시켰다.