• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.222-232
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• 1995

자기저항이란 외부 자기장에 의해 재료의 전기저항이 변화되는 현상을 일컫는다. Au와 같은 비자성도체 및 반도체 재료의 경우 외부에서 자기장이 가해지면 전도 전자가 Lorentz 힘을 받아 궤적이 변하므로 저항이 변화한다. 이러한 저항 변화 를 정상 자기저항(Ordinary Magnetoresistance, OMR)이라 하며 일반적으로 상당히 작은 저항의 변화를 나타낸다. 강자성도체 재료에서는 정상 자기저항 효과 외에도 부가적인 효과가 생긴다. 이는 스핀-궤도 결합에 기인한 효과로써 자기 저항은 강자성체의 자화용이축, 외부자계와 잔류간의 각도에 의존하며 이방성 자기저항(Anisotropic Magnetoresistance, AMR)이라 한다. AMR 비(%)는 일반적 으로 다음과 같이 정의된다. 즉 ${\Delta}{\rho}_{AMR}/{\rho}_{ave}=(\rho_{\|}-\rho_{T})/{\rho}_{ave}$로 여기서 $\rho_{\|}$는 자기장의 방향이 전류의 방향과 같을 때의 비저항 이고 $\rho_{T}$는 서로 수직일 때이며 ${\rho}_{ave}=(\rho_{\|}-\rho_{T})/3$이다. 기존의 MR 센서나 자기재생헤드(magnetic read head)에 사용되는 퍼머로이계 합금의 AMR 비는 상온에서 약 2% 정도의 저항변화를 보인다.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.71-72
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• 2013

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.224-230
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• 1998

The relationships between R-H curves of gaint magnetoresistance (GMR) spin valve trilayer films and M-H curves of each magnetic layer consisting of the trilayer films were analyzed and simple formula representing the relations between the curves were suggested for theoretical analysis and study of magnetoresistance (MR) in those films, especially where the MR is from the difference of coercivity. Using two kinds of NiFe/Cu/Co films, which had been deposited on Cu(50 $\AA$)/Si(111, 4$^{\circ}$ tilt-cut) and Cu(50 $\AA$)/glass, R-H and M-H curves were measured and compared with the calculated ones, which were obtained by appying the M-H curves of single NiFe and Co films, deposited on the same substrates, to the previously reported single-domain and multi-domain models. The calcuated ones were well consistent with the measured ones and the suggested simple relationships between R-H and M-H curves are thought to be very useful for the deep understanding of MR behavior and the reasonable approach to improve MR properties in GMR spin valve trilayer films.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.271-275
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• 2006

We investigated the magnetoresistance of perpendicularly magnetized magnetic tunnel junction composed of Co/Pd multilayers. The magnetoresistance was maximized with Co electrodes of about 5 nm thickness, which evidenced the important role of the interface in tunneling process. Both the change in perpendicular magnetic anisotropy and improvement of junction resistance were observed with changing Co sublayers, while the spin scattering became dominant with increasing Pd sublayers.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.28-31
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• 2008

We studied the effect of easy magnetization axis orientation with respect to the strip direction by measuring the magnetoresistance(MR), the magneto-optic Kerr effect(MOKE), and real-time domain evolution. The five strips were patterned on a single chip with the easy axis orientation of each strip relative to the longitudinal direction by around $0^{\circ}$, $18^{\circ}$, $36^{\circ}$, $54^{\circ}$ and $72^{\circ}$, respectively. The overall shape of field dependent MR was mostly governed by the anisotropy magnetoresistnace. The relative change of the longitudinal MR was significantly increased with increasing angle between the easy axis and strip direction, whereas, the transverse MR variation rate was decreased with increasing angle. Several MR steps were observed during the magnetization reversal, and the simultaneous measurement of the MOKE and the domain images identified that the MR steps were associated with evolution of the oppositely directed magnetic domain.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.963-967
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• 1995

Ultra thin layers of NiFeCo or NiFe were inserted at the interfaces of Ni and Cu to form a multilayer structure. In case of inserting a NiFe layer, the magnetoresistance was about 6%, the saturation magnetic field was 50 Oe and the hysteresis of R-H (resistance-magnetic field) was very small. In case of inserting a NiFeCo layer, the magnetoresistance increased to about 7% but the saturation magnetic field and hysteresis were also increased. The increase of the output under biased magnetic field was much larger in case of inserting a NiFe layer because of relatively smaller hysteresis in R-H behavior.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.173-177
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• 2006

We have investigated the magnetoresistance (MR) effect of the spin valve structures composed of perpendicularly magnetized Pd/Co multilayers, with changing the space layer (Pd or Cu) thickness, the stacking number of the Pd/Co multilayers, and the Co insertion-layer thickness. The Cu space layer showed larger MR ratio than the Pd space layer. The Co insertion-layer between Cu layer and pinned layer enhanced the MR ratio about three times. The maximum MR ratio of 7.4 % was established in the sample with the Co insertion-layer thickness of 0.62 and 1.01 nm.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.308-313
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• 1997

The magnetoresistance (MR) and the saturation field behavior of the CoFe-Ag nano granular films as a function of the ferromagnetic underlayer and overlayer materials were investigated. The maximum MR ratio of 25.7 % and the saturation field of 2.1 kOe in the as-deposited 3000 $\AA$ $(Co_{92}Fe_8)_{31}Ag_{69}$ single alloy films at room temperature were obtained. The MR ratio and the saturation field of the 100 $\AA$ alloy film were 1.2 % and 5.2 kOe, respectively. Those of the sandwiched alloy films of 200 $\AA$ thick with the Fe under and overlayer of 100 $\AA$ were 11 % and 1.8 kOe respectively. The reduction of saturation field in the sandwiched alloy films is due to the exchange coupling between the ferromagnetic layers and the alloy layer. Among the Fe and FeNi, the more effective materials to reduce the saturation field of the sandwiched alloy films was Fe.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.98-105
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• 1996

스퍼터링 방법으로 제작된 NiFe 박막에서 Ar 압력이 자기 및 자기저항 성질에 미치는 여향을 조사하였다. 타겟으로는 Ni$_{81}$$Fe_{19}$ 조성의 합금타겟을 사용하였다. TEM을 써서 박막의 미세구조를 조사하였으며, 보자력과 포화자화는 VSM으로 측정하였다. 합금박막의 조성은 ICPS로 분석 확인하였다. 10 mTorr 이상의 높은 Ar 압력에서 제작된 박막에서 갈라진 틈새(crack-like void)를 갖는 주상구조가 관찰되었다. 이러한 주상 결정립경계(columnar grain boundary)가 자화 과정에서 자구벽 핀닝자리(pinning site)가 되어, Ar 압력이 커짐에 따라 보자력이 증가 하였으며, 박막의 밀도가 감소하여 포화자화가 줄어드는 것을 볼 수 있었다. 한편, Ar 압력이 증가하면서 자기저항비가 감소하는 결과를 얻었다. 결정립 경계 산란과 결정립간 터널링에 의한 박막의 비저항의 증가가 이러한 자기저항비 감소의 주원인임을 알 수 있었다.다.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.25-28
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• 2004

The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 nm)/NiFe(7.5 nm)/Cu(3 nm)/Co(5 nm) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.