• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.3
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• pp.521-527
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• 1995

The average particle deposition velocity toward a vertical wafer surface in a vertical airflow chamber was measured by a wafer surface scanner(PMS Model SAS-3600). Polystyrene latex(PSL) spheres with diameters between 0.3 and $0.8{\mu}m$ were used. To examine the effect of the airflow velocity on the deposition velocity, experiments were conducted for three vertical airflow velocities ; 20, 30, 50cm/s. Experimental data of particle deposition velocity were compared with those given by prediction model suggested by Liu and Ahn(1987).

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2000.11a
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• pp.145-146
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• 2000

도시와 산업의 발달 및 인구증가로 인하여 다양한 종류의 대기오염물질이 대기 중으로 대량 배출되고 있다. 대기 중의 입자상 및 가스상 오염물질들은 강수, 안개 및 응축 등에 의한 습식침착(wet deposition)과 강수의 영향없이 진행되는 중력침강, 확산, 관성충돌 등에 의한 건식침착(dry deposition) 의 과정에 의해 대기 중에서 제거된다(Legge and Krupa, 1990). 일반적으로 습식침착은 구름 내에서 응핵(nuclei)으로 작용하여 오염물질이 제거되는 rain-out 과정과 비 또는 눈 등의 강하시 충돌, 간섭, 흡수 및 흡착과정에 의해 제거되는 세정과정(wash-out)으로 분류될 수 있다. (중략)

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.9
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• pp.2315-2328
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• 1993

The turbulence effect of particle deposition on a horizontal free-standing wafer in a vertical flow has been studied numerically by using the low-Reynolds-number k-.epsilon. turbulence model. For both the upper and lower surfaces of the wafer, predictions are made of the averaged particle deposition velocity and its radial distribution. Thus, it is now possible to obtain local information about the particle deposition on a free-standing wafer. The present result indicates that the particle deposition velocity on the lower surface of wafer is comparable to that on the upper one in the diffusion controlled deposition region in which the particle sizes are smaller than $0.1{\mu}m$. And it is found in this region that, compared to the laminar flow case, the averaged deposition velocity under the turbulent flow is about two times higher, and also that the local deposition velocity at the center of wafer is high equivalent to that the wafer edge.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1715-1721
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• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2000.04a
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• pp.229-230
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• 2000

자동차 보유대수의 증가와 더불어 열악해진 도로환경으로 인해 자동차를 이용하는 운전자와 승객의 보다 쾌적한 자동차 실내 환경에 대한 요구가 점점 증가하고 있다. 도로 주행시 자동차내로 유입되는 공기 중에는 도로먼지, 석면입자, 박테리아, 꽃가루 등의 다양한 악성 미립자상 물질과 오존, 벤젠, 톨루엔, 포름알데히드, 암모니아, NOx, SOx 둥의 유해 기체상 물질이 다량 함유되어 있다. 특히 미세 입자의 크기는 대부분이 5.0 $\mu\textrm{m}$로 미세하여 인간의 상부 호흡기관인 코에서 폐포까지 깊숙이 침착되는 것으로 보고되고 있다. (중략)

• Membrane Journal
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• v.5 no.1
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• pp.16-25
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• 1995

먼지는 일반적으로 입자크기가 $10\mu\textrm{m}$ 이상의 강하 먼지와 $10\mu\textrm{m}$ 이하의 부유먼지로 구분하며, 이들의 먼지는 대기중에서 인간이나 동.식물에 주로 영향을 준다. 입자크기 범위가 $0.1~10\mu\textrm{m}$ 사이의 부유먼지는 주로 산업공정에서 연료의 연소 또는 고체상 물질의 분쇄 및 수송공정 등에서 주로 발생되며, 입자크기가 $2.5\mu\textrm{m}$이하인 것들은 대기중에서 황산화성 미세먼지와 질산화성 미세먼지로 전환되어 가시도(visibility)에도 큰 영향을 미친다. 대기중에 부유된 먼지중에서 $8\mu\textrm{m}$ 이하는 호흡시 호흡기로 유입되는 입자크기로써, 입자크기가 $6.0\mu\textrm{m}$ 이하인 것은 약 10% 정도가 인간의 폐내로 유입되고, $4.0\mu\textrm{m}$ 이하인 것은 30%, $2.0\mu\textrm{m}$ 이하인 것은 약 99%가 폐(lung)에 유입되어 폐에 침착된다고 보고하였다. 앞으로 산업발전이 계속됨에 따라서 먼지의 배출량이 계속 증가할 것이며, 이로 인해 먼지에 의한 대기오염이 심각해질 뿐만 아니라 인간에 미치는 피해도 심각해질 것으로 예측된다.

• Analytical Science and Technology
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• v.31 no.6
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• pp.247-258
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• 2018

The purpose of the present study was to investigate whether the degree of air pollution can be evaluated via examination of local plants. Selected sites included two parks in an industrial area, as well as two parks in an urban area. Selected plant samples comprised one-year-old pine shoot leaves. Leaves growing over 2 m from the ground were collected from over 10 pine trees. Leaf surface was analyzed for deposition of 14 trace elements and 16 polycyclic aromatic hydrocarbons (PAHs), including particle size and mass, surface imaging, precipitation-mediated particle removal rate, and concentration. Particle size ranged from 0.4 to $200{\mu}m$, and the volume percentage of particles ${\leq}10$ was 20 %. Deposited particle mass ranged from 0.450-0.825 mg, and precipitation-mediated removal rate ranged from 10.0-27.6 %. Trace element concentration, as measured by ICP/MS after microwave acid digestion, was 18.8-26.3 mg/kg As, 0.08-0.13 mg/kg Be, 0.06-0.08 mg/kg Cd, 4.91-17.8 mg/kg Cr, 5.26-405 mg/kg Cu, 1,930-2,670 mg/kg Fe, 3.03-28.1 mg/kg Pb, 26.9-42.8 mg/kg Mn, 2.66-10.4 mg/kg Ni, 4,560-8,730 mg/kg Al, 2,500-6,120 mg/kg Ba, 5.27-17.8 mg/kg Rb, 40.9-95.3 mg/kg Sr, and 4,030-8,260 mg/kg Zn. Concentration of PAHs, as analyzed by GC/MS/MS after liquid-liquid extraction and purification of deposited particles, ranged from 1.17 to 12.378 mg/kg for ${\Sigma}PAH_{16}$ and from 1.17 to 12.378 mg/kg for ${\Sigma}PAH_7$.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 1998.04a
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• pp.118-120
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• 1998

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.5 no.2
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• pp.130-140
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• 1993

Average particle deposition velocity toward a horizontal semiconductor wafer in vertical airflow is measured by a wafer surface scanner(PMS SAS-3600). Use of wafer surface scanner requires very short exposure time normally ranging from 10 to 30 minutes, and hence makes repetition of experiment much easier. Polystyrene latex (PSL) spheres of diameter between 0.2 and $1.0{\mu}m$ are used. The present range of particle sizes is very important in controlling particle deposition on a wafer surface in industrial applications. For the present experiment, convection, diffusion, and sedimentation comprise important agents for deposition mechanisms. To investigate confidence interval of experimental data, mean and standard deviation of average deposition velocities are obtained from more than ten data set for each PSL sphere size. It is found that the distribution of mean of average deposition velocities from the measurement agrees well with the predictions of Liu and Ahn(1987) and Emi et al.(1989).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.10
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• pp.1284-1293
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• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.