• Title/Summary/Keyword: 인가전압

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Carrier Comparison PWM for Voltage Control of Vienna Rectifier (비엔나 정류기의 전압제어를 위한 반송파 비교 PWM)

  • Yoon, Byung-Chul;Kim, Hag-Wone;Cho, Kwan-Yuhl
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.10
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    • pp.4561-4568
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    • 2011
  • In this paper, carrier comparison PWM method for voltage control of Vienna rectifier is discussed. In general, in industrial and communications applications, the two-level rectifier is used. However, this two-level rectifier has the limit of high THD and low efficiency. So, the studies of three-level rectifier has been carried out so far, and the Vienna rectifier circuit is the representative. The space vector pulse width modulation(SVPWM) method is generally used for Vienna rectifier, in which voltage vectors and duration time are calculated from the voltage reference. However, this method require very sophisticated and complex calculations, so realizing this method by software is very difficult. To overcome this disadvantage, simple carrier comparison PWM method for Vienna rectifier is proposed which is modified from the carrier comparison method for 3 level inverter. Furthermore, to verify the usefulness of the Vienna rectifier carrier comparison PWM the simulation and experiment are carried out.

Observation of Diverse Aluminum Oxide Structures in a Phosphoric Acid Solution according to the Applied Anodization Voltage (인산용액에서 양극산화 인가전압에 따른 알루미늄 산화피막 성장 관찰)

  • Jeong, Chanyoung
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.1
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    • pp.35-39
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    • 2019
  • To date, porous alumina structures have been implemented by electrochemical anodization technique. The anodizing methods can easy to make a porous aluminum oxide film with a regular arrangement, but oxide film with complex structure type such as pillar-on-pore is relatively difficult to implement. Therefore, this study aims to observe the change of anodized oxide pore size, thickness, and structure in a phosphoric acid solution according to applied anodization voltage conditions. For the implementation of hybrid composite oxide structures, it is possible to create by modulating anodization voltage. The experimental conditions were performed at the applied anodization voltage of 100 V and 120 V in 10% phosphoric acid solution, respectively. The experimental results were able to observe the structure of oxides in the form of porous and composite structures (pillar-on-pore), depending on each condition.

Analysis of Soil lonization Characteristics in Concentric Cylindrical Electrode System under Impulse Voltages (임펄스전압에 의한 동심원통형 전극계에서 토양 이온화특성 분석)

  • Kim, Hoe-Gu;Park, Geon-Hun;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.9
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    • pp.32-39
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    • 2008
  • This paper presents the soil ionization phenomena and the parameters with the transient characteristics of model grounding system under lightning impulse voltages. lonization properties of dry and wet sands were investigated by using two test cells of concentric cylindrical electrode system with different dimensions. As a result non-linear electrical behavior of sand under high impulse voltage is caused by ionization process. The transient impedance of sand depends not only on the water content but also on the magnitude of applied impulse voltages. The grounding impedance is decreased with increasing the water content and the magnitude of a lied voltages. The results resented in this paper will provide useful information on the design of high performance grounding systems against lightning surge.

A New Voltage Control method for a Three-Phase Z-Source Inverter (3상 Z-소스 인버터를 위한 새로운 전압 제어방법)

  • Kim, S.J.;Jung, Y.G.;Lim, Y.C.
    • Proceedings of the KIPE Conference
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    • 2010.07a
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    • pp.363-364
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    • 2010
  • 본 논문에서는 전압형 3상 Z-소스 인버터의 전압 안정화를 위한 새로운 제어방법을 제안하였다. 제안된 방법은 전압형 3상 Z-소스 인버터의 입력전압과 Z-임피던스 망의 커패시터 인가전압을 검출하여 제어하는 방식이다. 검출된 두 전압을 이용해 동작중인 시스템의 전압이득 및 변조지수를 유도하였다. 제안된방법은 전압 안정화를 위한 전압이득 및 변조지수와의 비교연산을 통해 출력전압을 안정화 시키는 방법으로 PISM을 이용하여 출력 교류 파형 및 제어방법을 분석하였다.

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Analysis on Fault Current limiting and Recovery Characteristics of Flux-Lock Type Superconducting Fault Current Limiter According to Increase of Applied Voltage (전압증가에 따른 자속구속형 초전도 한류기의 전류제한 및 회복특성 분석)

  • Oh, Kum-Gon;Han, Tae-Hee;Cho, Yong-Sun;Cho, Hyo-Sang;Choi, Myoung-Ho;Han, Young-Hee;Sung, Tae-Hyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.8
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    • pp.107-112
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    • 2007
  • The flux-lock type SFCL consists of transformer with primary and secondary windings connected to a superconducting element in serial. It can be divided into the subtractive and the additive polarity windings according to the winding direction. It could change the fault current limiting characteristics according to the inductance ratio between the coil 1 and coil 2. We investigated the voltage-current characteristics of the flux-lock type SFCL according to the increment of applied voltage. When the applied voltage of the SFCL with the subtractive and the additive polarity windings was increased a initial limiting current ($I_{ini}$) and the quench time of the superconducting element were increased. The recovery time of the superconducting element was increased by increment of applied voltage. Therefore, it was confirmed that recovery characteristics in the flux-lock type SFCL were largely dependent on the consumed energy of a superconducting element because of increment of the consumption power into the superconducting element.

The Electrical Breakdown Characterization of Gas Discharge Tube using Brass Electrode for Surge Protector (과전압 보호용 황동전극 기체방전관의 절연파괴 특성)

  • Kim, Min Il;Jeong, Euigyung;Lee, Sei-Hyun;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.21 no.2
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    • pp.205-210
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    • 2010
  • In this study, a brass electrode gas discharge tube (GDT) was prepared to investigate its discharge characterization, which affects surge protection efficiency and lifetime of GDT. Discharge characterization of GDT using a brass electrode was investigated by changing applied voltage gradient and nitrogen gas pressure inside the GDT. As applied voltage gradient in GDT increased, electrical breakdown voltage and threshold energy largely increased and electrical breakdown time delay decreased. It was found that electrical breakdown voltage, electrical breakdown time delay, and threshold energy were largely decreased with decreasing the nitrogen gas pressure in GDT. As a result, electrical breakdown voltage, electrical breakdown time delay, threshold energy needed to be decreased to increase surge protection efficiency and lifetime. It was also found that the nitrogen gas pressure of GDT influenced strongly the performances as well as life span of it.

Permanent-magnet Synchronous Motor Control Strategy for Improved Torque Dynamics and Torque Ripple Reduction (동적 특성 개선과 토크 리플 저감을 위한 영구자석 동기전동기의 토크 예측 제어 기법)

  • Shin, Yesl;Cho, Yongsoo;Lee, Kyo-Beum
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.88-89
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    • 2013
  • 본 논문은 영구자석 동기전동기의 동적 특성 개선과 토크 리플 저감 기법을 제안한다. 제안하는 방법은 영구자석 동기전동기의 인가전압과 토크의 관계를 수학적인 분석을 통해 유효 벡터 인가 시간을 결정하는 기법이다. 결정된 유효벡터 인가 시간과 동기전동기의 토크 오차와의 관계를 이용하여 최종적인 지령전압벡터를 계산한다. 계산된 지령전압벡터는 영구자석 동기전동기의 빠른 응답성과 우수한 정상상태 특성을 보인다. 시뮬레이션을 이용하여 제안하는 영구자석 동기기 토크 제어 알고리즘의 타당성을 확인한다.

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Fabrication and Characteristics of a-Si : H Photodiodes for Image Sensor (영상센서를 위한 a-Si : H 광다이오드의 제작 및 특성)

  • Park, Wug-Dong;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.29-34
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    • 1993
  • a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

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Threshold Voltage Variation of ZnS:Mn/ZnS:Tb Thin- film Electroluminescent(TFEL) Devices (ZnS:Mn/ZnS:Tb 박막 전계발광소자의 문턱전압 변화)

  • 이순석;윤선진;임성규
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.6
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    • pp.21-27
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    • 1998
  • Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

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Voltage Distortion Compensation of VSI based on Direct Voltage Injection (직접 전압 인가 방식을 이용한 인버터의 전압 왜곡 보상)

  • Lee, Taeyeon;Nam, Kwanghee
    • Proceedings of the KIPE Conference
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    • 2018.11a
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    • pp.169-170
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    • 2018
  • 전압형 인버터의 경우 IGBT와 같은 전력용 반도체 소자를 사용하여 스위칭을 하게 되는데 이상적으로 on, off 되지 않기 때문에 시간 지연이 발생하게 되고, 공정 상의 이유로 기생 커패시터가 생성되어 사용자가 원하는 시간에 스위치의 on, off가 일어나지 않게 된다. 또한, 전압형 인버터에서는 스위칭 시에 윗단과 아랫단의 스위치가 단락되는 현상을 막기 위하여 데드타임이라는 여유 시간을 주게 되는데 이러한 요인들이 인버터의 비선형성을 일으키게 된다. 인버터의 비선형성은 사용자가 플랜트로 보내고자 하는 전압과 플랜트가 받는 전압 사이에 오차를 발생시키게 된다. 본 논문에서는 이러한 전압 왜곡을 보상하기 위하여 인버터로 전압을 직접 인가하는 방식을 통해서 전압 왜곡을 계산하고 실험적으로 얻어낸 정확한 데이터를 기반으로 수식에 대입하여 전압 보상을 진행한다. 본 논문에서는 측정 시퀀스를 하나의 알고리즘으로 구현하여 짧은 시간 내에 정확히 측정해 낼 수 있는 방식을 제안한다.

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