• Journal of the Korean Wood Science and Technology
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• v.33 no.1 s.129
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• pp.7-16
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• 2005

This study was carried out to evaluate the structural property of double shear bolted connections in Korean Larch. For the main member, sawn lumber and Glulam were used in which thickness of lumber is 39 mm, 89 mm, 139 mm, 189 mm and Glulam 80 mm, 140 mm, 170 mm. For the side member, sawn lumber and steel plate were used in which thickness of lumber is the same of the main member and steel plate is 6mm. And connections were jointed by M12, M16, M20 bolts which were usually used for wood constructions in Korea. Directions of loading to connections were perpendicular and parallel to grain of main and side member. First, through the dowel bearing test, the dowel bearing strength was evaluated and through the bolt bending tests, the bolt bending strength was evaluated. And then experiments for the connection were performed. Obtained results from experiments were compared with calculated values by EYM and analyzed. Strength of double shear bolted connections in Korean Larch was similar or higher than calculated value by EYM. Especially when the side member was made by the sawn lumber, it was similar to the calculated value. In failure mode, the mode was effected by the knot and the dry defect. In the thin main member, it was shown mode I and as the thickness of the main member was thicker, it was changed into mode III.

• Korean Journal of Microbiology
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• v.49 no.1
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• pp.1-7
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• 2013

During meiosis, genetic recombinants are formed by homologous recombination accompanying with the programmed double-strand breaks (DSBs) and strand exchanges between homologous chromosomes. The mechanism is generated by recombination intermediates such as single-end invasions (SEIs) and double-Holliday junctions (dHJs), and followed by crossover (CO) or non-crossover (NCO) products. Our study was focused on the analysis of meiotic recombination intermediates (DSBs, SEIs, and dHJs) and final recombination products (CO and NCO). We identified these meiotic recombination intermediates using DNA physical analysis under HIS4LEU2 "hot spot" system in budding yeast, Saccharomyces cerevisiae. For DNA physical analysis, when the hot spot locus is recognized by restriction enzyme from synchronous meiotic cells, the fragmented DNA that are forming recombination intermediates can be detected and quantified through Southern hybridization analysis. Our study suggests that this system can analyze the structural change of recombination intermediates during DSB-SEI transition, double-Holiday junctions and crossover/non-crossover products in meiosis.

• Journal of IKEEE
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• v.22 no.1
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• pp.74-79
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• 2018

We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.420-425
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• 1995

AlGaN/GaInN 이중이종접합구조(double heterostructure :DH)를 대기압 유기금속기상에 피텍셜(MOVPE)법으로 AIN 와충층을 이용하여 사파이어 기판위에 성장하고, 실온에서의 광여기법에 의한 청색영역의 단면모드 유도방출특성과 편광특성을 조사하였다. 여기광원의 광밀도가 증가함에 따라 청색 영역에서의 유도방출 피크는 낮은 에너지 쪽으로 이동하였고, 유도방출 피크파장은 여기광밀도가 200kW/$cm^{2}$일때 402nm 이었으며, 스펙트럼의 반치폭은 18meV 이었다. 또한 유도방출에 필요한 여기광밀도의 임계치는 130 kW/$cm^{2}$ 이었다. AlGaN/GaInN로부터 방출되는 유도방출 광은 임계치 이상에서 TE-mode로 편광 되었다.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.445-450
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• 1995

AIN 완충층을 이용하여 대기압 유기금속에피텍셜 (MOVPE)법으로 사파이어 기판위에 성장시킨 AlGaN/GaN 이중 이종접합구조(double heterostructure : DH)의 고밀도 광여기에 의한 자외선 영역에서의 단면모드 유도방출 특성에 대하여 조사하였다. 실온에서 여기광 밀도 200kW/$cm^{2}$에서 방출된 AlGaN/GaN DH의 유도방출 피크파장과 반치폭은 각각 369nm와 22.4meV이었으며, 80K의 온도에서는 각각 360.1nm와 13.4meV이었다. 고밀도 광여기에 의하여 단면모드 자외영역 유도방출을 얻기에 필요한 입사광 밀도의 임계치는 실온과 80K의 온도에서 각각 89kW/$cm^{2}$와 44kW/$cm^{2}$이었다.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1343-1345
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• 2001

본 논문은 스냅백을 효과적으로 제거하고 순방향 전압 강하를 줄이는 새로운 구조의 분리된 이중 게이트 SOI SA-LIGBT를 제안하였다. 제안된 소자는 분리된 단락 애노드와 플로팅 오믹 접합의 적용을 통해 스냅백이 성공적으로 제거되었고, 순방향전압강하는 전류밀도가 100A/$cm^2$일 때 기존의 SA-LIGBT에 비교해서 2V 감소된다. 또한 턴-오프 특성도 분리된 단락 애노드를 적용하였기 때문에 SA-LIGBT보다 개선되었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.15-21
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• 1983

In this paper, the theoretical analysis of lateral guiding mechanism in stripe geometry Double Heterojunction Laser Diode is performed. In the analysis, the spatial variations of gain form refractive index profile are modeled by the mathematical form of injected current density and the beam width variations dependence of active layer, stripe width & cavity length have been analyzed by perturbed mode equation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.2
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• pp.33-39
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• 2013

In this paper, X/Ku band waveguide diplexers with H-plane T-junction for satellite communication systems is proposed and its characteristics is cinfirmed. Two frequency bands such as X(7.25 ~ 8.4 GHz) and Ku(12.25 ~ 14.5 GHz) can be separated by the proposed waveguide diplexers. A diplexers is normally including low pass filter, high pass filter and junction waveguide. To simplify the structure of the proposed diplexers, the proposed waveguide diplexers is using impedance matching technique on H-plane of the high pass filter without low pass filter. To use vertical and horizontal polarization, the proposed diplexers with orthomode transducer(OMT) characteristics is also designed. Therefore, it is confirmed that the proposed waveguide diplexers can be used as dual-band and dual-polarization diplexers for satellite communication feed systems.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.41-42
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• 2014