• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Resources Recycling
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• v.8 no.3
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• pp.18-25
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• 1999

The study on the electrosorption of cobalt ions onto a porous activated carbon fiber (ACF) was performed to treat radioactive liquid wastes resulting from chemical or electrochemical decontamination and to regenerate the spent carbon electrode, Cyclic voltammetry was investigated on a rotating-disk electrode (RDE) to determine the region of potentials within which only double-layer charging should occur. The application of an electric potential increased the sorption of the cobalt ions. The adsorbed cobalt Ions could be released into the solution by reversing the appling potential, showing the reversibility of the process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.332-337
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• 2006

We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.186-192
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• 2010

In situ electrochemical atomic force microscopy (ECAFM) observations of the surface of highly oriented pyrolytic graphite (HOPG) was performed before and after cyclic voltammetry in lithium bis(fluorosulfonyl)imide (LiTFSI) dissolved in 1-buthyl-2,3-dimethylimidazolium (BDMI)-TFSI to understand the interfacial reactions between graphite and BDMI-based ionic liquids. The formation of blisters and the exfoliation of graphene layers by the intercalation of $BDMI^+$ cations within HOPG were observed instead of reversible lithium intercalation and de-intercalation. On the other hand, lithium ions are reversibly intercalated into the HOPG and de-intercalatied from the HOPG without intercalation of the $BDMI^+$ cations in the presence of 15 wt% of 4.90 mol/$kg^{-1}$ LiTFSI dissolved in propylene carbonate (PC). ECAFM results revealed that the concentrated PC-based solution is a very effective additive for preventing $BDMI^+$ intercalation through the formation of solid electrolyte interface (SEI).

• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.38-43
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• 2011

Because the ionic liquid added with Propylene carbonate(PC) at room temperature has lower viscosity than original, we considered electrochemical behavior of it in EDLC. The ionic liquid without PC which does not have ions has no problem in capacity since it has enough ions. The electrolyte resistance was decreased with decreasing viscosity. As a result of identifying high current discharge capacity, we observed that the ionic liquid had capacity of 73.12% at current density of $80\;mA/cm^{-2}$, but it increased to 81.94% at PC content of 40 vol%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.273-273
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• 2011

현재 사용되고 있는 플로팅 게이트를 이용한 플래시 메모리 소자는 비례축소에 의해 발생하는 단 채널 효과, 펀치스루 효과 및 소자간 커플링 현상과 같은 문제로 소자의 크기를 줄이는데 한계가 있다. 이러한 문제를 해결하기 위하여 silicon nitride와 같은 절연체를 전자의 트랩층으로 사용하는 charge trap flash (CTF) 메모리 소자에 대한 연구가 활발히 진행되고 있다. CTF 메모리 소자의 전기적 특성에 대한 연구는 활발히 진행 되었지만, 수치 해석 모델을 사용하여 메모리 소자의 전하수송 메커니즘을 분석한 연구는 매우 적다. 본 연구에서는 수치 해석 모델을 적용하여 개발한 시뮬레이터를 사용하여 CTF 메모리 소자의 프로그램 동작 시 전하수송 메커니즘에 대한 연구를 하였다. 시뮬레이터에 사용된 모델은 연속방정식, 포아송 방정식과 Shockley-Read-Hall 재결합 모델을 수치해석적 방법으로 계산하였다. 또한 CTF 소자 프로그램 동작 시 트랩 층으로 주입되는 전자의 양은 Wentzel-Kramers-Brillouin 근사 법을 이용하여 계산하였다. 트랩 층에 트랩 되었던 전자의 방출 모델은 이온화 과정을 사용하였다. 게이트와 트랩 층 사이의 터널링은 Fowler-Nordheim (FN) tunneling 모델, Direct tunneling 모델, Modified FN tunneling 모델을 적용하였다. FN tunneling 만을 적용했을때 보다 세가지 모델을 적용했을 때가 더 실험치와의 오차가 적었다. 그 이유는 시뮬레이션 결과를 통해 인가된 전계에 의해 Bottom Oxide 층의 에너지 밴드 구조가 변화하여 세가지 tunneling 모델의 구역이 발생하는 것을 확인 할 수 있었다. 계산된 결과의 전류-전압 곡선을 통해 CTF 메모리 소자의 프로그램 동작 특성을 관찰하였다. 트랩 층의 전도대역과 트랩 층 내부에 분포하는 전자의 양을 시간에 따라 계산하여 트랩 밀도가 시간이 지남에 따라 일정 값에 수렴하고 많은 전하가 트랩 될 수록 전하 주입이 줄어듬을 관찰 하였다. 이와 같은 시뮬레이션 결과를 통해 CTF 메모리의 트랩층에서 전하의 이동에 대해 더 많이 이해하여 CTF 소자가 가진 문제점 해결에 도움을 줄 것이다.

• Membrane Journal
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• v.13 no.3
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• pp.143-153
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• 2003

The effects of bipolar interface formed on the surface of cation-exchange membrane on water splitting phenomena were investigated. Results showed that the formation of immobilized bipolar interface resulted in significant water splitting during electrodialysis. In particular, the immobilized bipolar interface was easily created on the cation-exchange membrane surface in the electrodialytic systems where multivalent cations served as an electrolyte. Multivalent cations with low solubility product resulted in violent water splitting because they were easily precipitated on the membrane surface in hydroxide form. Therefore, the bipolar interface consisting of H- and OH-affinity groups were formed on the membrane-solution interface. Apparently, water splitting was largely activated with the help of strong electric fields generated between the metal hydroxide layer and fixed charge groups on the membrane surface. Likewise, the accumulation of large molecular counter ions on the membrane surface led to the formation of a fixed bipolar structure that could cause significant water splitting in the over-limiting current region. Therefore, the prevention of the immobilization of bipolar interface on the membrane surface is very essential in improving the process efficiency in a high-current operation.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1097-1104
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• 2000

MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

• Journal of IKEEE
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• v.22 no.4
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• pp.1226-1229
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• 2018

We investigated the improvement of surface roughness and states after high temperature annealing using reduced-graphene oxide (r-GO) capping layer on ion-implanted 4H-SiC epitaxial layer. The specification of the 4H-SiC wafer grown on n-type $4^{\circ}$ off-axis 4H-SiC was $10{\mu}m$-thick and n-type epitaxial layer with a dose of $1.73{\times}10^{15}cm^{-2}$. The $n^+$ region were formed by multiple nitrogen ion-implantations and r-GO capping layer was produced by spray coating method. AFM measurements revealed that RMS value of the sample capped with r-GO was tenfold decrease compared to the sample without r-GO capping. The improvement of surface states was also verified by the improvement of leakage current level.

• Analytical Science and Technology
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• v.9 no.2
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• pp.161-167
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• 1996

An investigation was made of possible ways in which one could control the relative rates of cadmium deposition and hydrogen evolution by binary additive systems. Benzyl alcohol was employed as an additives due to its ability to form a hydrophobic film which inhibit the electroreduction of water to form hydrogen. The second additive was chosen to make the cadmium(II) ion less hydrophilic and increase its ability to cross the hydrophobic benzyl alcohol film and be electrodeposited at the cathode. It was shown by voltammetric and current efficiency studies that ion pairing and complexing additives could be used to accelerate the reduction of cadmium in the presence of the benzyl alcohol film. It was also shown that the benzyl alcohol film lowered the dielectric constant of the solution near the electrode enough to obtain ion pairing between the sodium ion and the negative chloride complex of cadmium and accelerate the reduction of the cadmium. This acceleration did not occur in the sulfate solution in the absence of chloride since cadmium(II) is primarily present as a positive aquo complex and ion pairing, if it occured, would not accelerate but would hinder reduction of cadmium.