• Journal of the Korean Electrochemical Society
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• v.12 no.4
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• pp.317-323
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• 2009

Theoretical calculations for the secondary current distributions for the electrode with a projection part in electroplating were performed. Two kinds of electrodes were considered. One is a electrode with the overall conducting surfaces(Case 1) and the other is an electrode in which only a projection part has a conducting surface(Case 2). The effects of applied potential, the ratio of ion exchange current to conductivity, $\xi$ and the aspect ratio on the current distribution were examined. The increase of applied current or the value of $\xi$ decreased the uniformity of current distribution. The small value of aspect ratio resulted the more uniform current distribution and Case 2 showed the better uniformity than Case 2. When this model was applied into an electrode with various projection parts, the local current distribution along the electrode surface were obtained successfully. In this case, the decrease of $\xi$ also increase the uniformity of current distribution as seen previously.

• Proceedings of the KIEE Conference
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• 2004.07d
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• pp.2696-2698
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• 2004

Iontophoresis를 이용한 경피전달용 약물 패치를 제작하기 위해 고분자의 종류, 전류크기, 시간에 따른 약물방출 결과를 발표한다. 고분자 Hydroxy Propyl Methyl Cellulose(HPMC), Hydroxy Propyl Cellulose(HPC), Hydroxy Ethyl Cellulose(HEC)에 각각 국소마취제-Lidocaine을 넣어 시료를 제작하였다. 약물 방출은 Drug Delivery Cell(DDC)위에 Ag/AgCl 전극 (anode), Pt wire 전극(cathode)을 각각 설치하여 전압인가에 따른 이온 유동으로부터 시간에 따른 전압/전류변화 및 약물농도를 고찰하였다. 전압 15V 인가 시 고분자 막과 전해질 사이에 흐르는 전류 1.0mA는 15분간 유지되지만, Ag/AgCl 전극의 산화작용으로 인해 전류는 서서히 감소하며 26분 후 거의 흐르지 않았다. 따라서 안정적인 전류로 유지되는 시간을 15분으로 최적화하였다. 고분자 중 HPMC 막을 사용하여 약물방출 실험을 한 경우 UV 분석결과 파장 262.26nm에서 최대 흡광도 0.238이었고, 가장 높은 약물농도가 나타났다. 이러한 HPMC의 약물방출 실험결과 비교적 높은 전류 1.0mA일 때 약물 방출량이 많았고, 동일한 전류 0.4mA를 장시간 흐르게 하였을 경우, 농도가 축적되므로 치료 가능한 안정적인 특성임을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.9-16
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• 1999

We have investigated effects of local damage accumulation for ultra-low energy As and B ion implant using highly efficient molecular dynamics(MD) scheme. We simulated ion implantation by MD simulation using recoil ion approximation (RIA) method and local cell damage accumulation (LCDA) model proposed in the paper. Local damage accumulation probability function consisted of deposited energy in a unit cell, implant dose rate, target material, projectile atom, and recoil event number. The simulated results were good agreement with the experimental and other simulated results. The MDRANGE results without damage accumulation were different from SIMS data in the tail region. We also simulated 2 dimensional dopant and damage profiles using the local damage accumulation model and recoil ion approximation method.

• Korean Chemical Engineering Research
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• v.57 no.3
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• pp.438-443
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• 2019

A new measurement method is suggested to quantify the phosphate poisoning of cathodic Pt catalyst for HT-PEMFC. To do that, hydrogen peroxide was used as an indicator to reduce the error which has been occurred in conventional electrochemical measurement such as CV or ORR RDE with high concentration of phosphate ions. As a result, the current density induced from the reaction of hydrogen peroxide decomposition increased proportionally to the concentration of phosphate ion while the conventional methods show has a significant error with high concentration of phosphate ion. Thus, it is confirmed that the suggested way is superior to the conventional measurement method for the quantification of phosphate ion poisoning in an atmosphere similar to the actual operation condition of HT-PEMFC.

• Journal of Radiation Protection and Research
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• v.24 no.2
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• pp.73-86
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• 1999

The ion-exchange method for the purification of primary coolant has been used broadly in PWR(pressurized water reactor)-type nuclear power plants due to its high decontamination efficiency, simple system, and easy operation. However, its non-selective removal of metal and non-radionuclides shortens its life, resulting in the generation of a large amount of waste ion-exchange resin. In this study, the feasibility of electrodeionization (EDI) was investigated for the purification of primary cooling water using synthetic solutions under various experimental conditions as an alternative method for the ion exchange. The results shows that as the feed flow-rate increased, the removal efficiency increased and the power consumption decreased. The removal rate was observed as a 1000 decontamination factor(DF) at a nearly constant level. For the synthetic solution of 3 ppm TDS (Total Dissolved Solid), the power consumption was 40.3 mWh/L at 2.0 L/min of feed flow rate. The higher removal rate of metal species and lower power consumption were obtained with greater resin volume per diluting compartment. However, the flow rate of the EDI process decreased with the elapsed time because of the hydrodynamic resistivity of resin itself and resin fouling by suspended solids. Thus, the ion-exchange resin was replaced by an ion-conducting spacer in order to overcome the drawback. The system equipped with the ion-conducting spacer resolved the problem of the decreasing flow rate but showed a lower efficiency in terms of the power consumption, the removal rate of metal species and current efficiency. In the repeated batch operation, it was found that the removal efficiency of metal species was stably maintained at DF 1000.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.768-771
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.