• Title/Summary/Keyword: 이영태

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Development of a Paper Strain Gauge using Inkjet-printing Technology (잉크젯 인쇄기술을 이용한 종이 스트레인게이지 개발)

  • Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.2
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    • pp.23-27
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    • 2015
  • In this paper, eco-friendly paper strain gauge was fabricated in the way of printing strain gauge on paper substrate, using PEDOT:PSS ink and inkjet printer technology. As a p-type conductive high polymer, PEDOT:PSS is known to be piezoresistive effect. I formed a strain gauge by connecting in parallel 5 lines of $60{\mu}m$ width printed with PEDOT:PSS. To minimize surrounding influence such as temperature, I formed wheat-stone bridge by combining 4 strain gauges (quarter-bridge strain gauge) which were made up of PEDOT:PSS 5 lines and measured. In quarter-bridge strain gauge, only two strain gauges, facing each other, arranged in strain and horizontal direction were deformed while the other two strain gauge of vertical direction were not. Therefore, quarter-bridge strain gauge showed the output of half bridge. The fabricated quarter-bridge strain gauge had output sensitivity of $105.6{\mu}V/V{\cdot}mm$ and its output linearity was relatively good.

Characteristics silicon pressure sensor using dry etching technology (건식식각 기술 이용한 실리콘 압력센서의 특성)

  • Woo, Dong-Kyun;Lee, Kyung-Il;Kim, Heung-Rak;Suh, Ho-Cheol;Lee, Young-Tae
    • Journal of Sensor Science and Technology
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    • v.19 no.2
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    • pp.137-141
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    • 2010
  • In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

Microscopic hole fabrication of glass using electro-chemical discharge method (전해 방전법에 의한 유리의 미세 구멍 가공)

  • Lee, Wang-Hoon;Lee, Young-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.89-92
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    • 2001
  • In this paper, we studied on drilling a microscopic hole of glass using electro-chemical discharge methode. In this research, we fabricated a electro-chemical discharge machine for drilling glass hole. The used parameters to get a fine microscopic hole are the concentration of NaOH solution from 5wt% to 50wt%, the supply voltage from 10V to 40V and the fabricating time from 5 second to 50 second. Also, we used a 0.16mm glass plate. We learned from our experiment that, the fabrication most efficient when supply voltage is 25V-30V and concentration of NaOH solution 35wt% or less.

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Fabrication of the Liquid Analyzer us ing Micro-stereolithography Technology (Micro-stereolithography 기술을 이용한 용액분석 소자 제작)

  • 이영태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.994-1000
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    • 2001
  • In this paper, using micro-stereolithography technology, I fabricated a liquid analyzer to measure ion concentration of a solution. Micro-stereolithography is a technology to fabricate 3-dimensional structure by applying laser beam on liquid photo-polymer. This technology makes it possible to do preassemble fabrication without any extra assembling step after the process. So, the liquid analyzer could be fabricated at very low cost with very simple process by micro-stereolithography technology. The liquid analyzer consists of a chamber for containing the solution, a pump using piezoelectric effect of PZT disk, a static mixer and a sensor for measuring ion concentration using Pt electrodes.

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Development of the high temperature silicon pressure sensor (고온용 실리콘 압력센서 개발)

  • Kim, Mi-Mok;Chul, Nam-Tae;Lee, Young-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.147-150
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    • 2003
  • In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

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Development of the High Temperature Silicon Pressure Sensor (고온용 실리콘 압력센서 개발)

  • Kim, Mi-Mook;Nam, Tae-Chul;Lee, Young-Tae
    • Journal of Sensor Science and Technology
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    • v.13 no.3
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    • pp.175-181
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    • 2004
  • A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

Development of the high-temperature, high-pressure Dynamic pressure sensor with LGT (LGT를 이용한 고온, 고압용 동압 센서 개발)

  • Kwon, Hyuk Jae;Lee, Kyung Il;Kim, Dong Su;Kim, Young Deog;Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.17-21
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    • 2012
  • This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

Development of a Strain Gauge for Sensing Large Strain (대 변형 감지용 스트레인게이지 개발)

  • Lee, Young Tae;Cho, Seung Woo
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.33-36
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    • 2014
  • In this paper, a carbon strain gauge for large strain was developed. The carbon strain gauge was fabricated by forming PCB and antenna pattern using Cu/Ni/Au film and carbon resistor pattern using screen printing process on plastic film substrate. It was possible to develop low-cost disposable strain gauge since the carbon paste was cheap and the fabrication process was simple. The wireless communication type carbon strain gauge was fabricated by integrating signal processing circuit, antenna and power all together on the same substrate as a strain gauge. The wireless communication type carbon strain gauge has a merit of being available immediately at the spot without any particular system.

Fabrication of Optical Sheet for LED Lighting with Integrated Environment Monitoring Sensors (환경모니터링 센서가 집적된 LED 조명용 광학시트 제작)

  • Choi, Yong Joon;Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.3
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    • pp.35-39
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    • 2013
  • In this paper, we developed an optical sheet for LED lighting with integrated $CO_2$ gas and temperature sensor which can monitor at the indoor environment. The optical sheet for LED lighting is fabricated through PMMA(Polymethyl methacrylate) injection process using mold. This research enables to fabricate the reflective sheet, light-guide plate and the prism sheet in a optical sheet. The fabricated sheet demonstrates higher intensity of optical efficiency compared with single-sided sheets. The $CO_2$ sensor was fabricated using NDIR(NON-Dispersive Infrared) method and it has $0.0235mV/V{\cdot}PPM$ sensitivity. The temperature sensor was fabricated using RTD(Resistance temperature detector) method and it has $0.563{\Omega}/^{\circ}C $sensitivity.

Design of Heat Pump for Temperature Control of Sealed Electric Box (밀폐 형 전장 박스 온도 제어를 위한 히트 펌프 설계)

  • Lee, Young Tae
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.110-114
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    • 2020
  • In this paper, a heat pump using a Peltier device was developed for heat dissipation in a sealed electric box. The heat pump was designed with a cooling fin attached to both sides of the Peltier device, and a fan was mounted on the cooling fin on the hot side to increase the efficiency. The heat dissipation efficiency could be improved by directly connecting the electronic component having high heat to the cooling fin using a heat conducting wire. The fabricated heat pump was designed to operate only in the temperature range set by the temperature control system to improve the problem of high power consumption of the Peltier element.