• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.164-167
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• 2003

Carbon nitride films with ${\beta}-C_3N_4$ crystals were grown by rf reactive magnetron sputtering system with negative DC bias. Chamber baking system to supply whole chamber with activation energy was used to reduce the contamination of H and O atoms. XRD peaks showed the existence of crystalline ${\beta}-C_3N_4$(200) and lonsdaleite structures. FTIR spectroscopy studies revealed that the film contain ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ with $1011\;cm^{-1},\;1257\;cm^{-1}\;and\;1529\;cm^{-1}$ peaks. We could also find the grain growth of hexagonal structure from SEM photograph, which is coincident with the theoretical carbon nitride unit cell. ${\alpha}$-step was used to make the thickness profile of the grown films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.152-155
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• 2006

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.247-253
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• 2019

In this study, compounds with azo-mesogenic groups at 4-, 3,5-, or 3,4,5-positions of one phenyl ring were synthesized, and their liquid crystallinity and photochemistry were investigated. The compounds in the Azo1 and Azo2 series had linear and planar geometries, respectively, while those in the Azo3 series had relatively bulky structures. Compounds of BA-Azo2 and BA-Azo3 did not show any liquid crystallinity. Compounds of BE-Azo1 and BE-Azo2 exhibited a monotropic liquid crystallinity, while the other compounds showed an enantiotropic liquid crystallinity. The liquid crystalline behavior was imparted by the azo-mesogenic groups, and most of the liquid crystalline compounds formed a smectic phase. All the RM-AzoX compounds exhibited photoisomerism because of the presence of the azo groups in the molecule. The rate of photoisomerization followed the order of RM-Azo3 < RM-Azo1 < RM-Azo2 and was considered to depend on the steric hindrance around the azobenzene groups in the molecule. These results suggest that the liquid crystallinity and photochemical property of the compounds are affected by the position or the number of azo-mesogenic groups phenyl ring of the molecule.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.313-313
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• 2014

GaN계 물질 기반의 광 반도체는 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있고, 효율 증대를 위한 에피, 소자 구조 및 패키지 등의 많은 연구가 진행되고 있다. 특히, 투명 전극을 이용한 광 추출 효율의 증가에 대한 연구는 전체 외부양자효율을 증가시키는 중요한 기술로 각광을 받고 있다. 이러한 투명전극은 가시광 영역의 빛을 투과하면서도 전기 전도성을 갖는 기능성 박막 전극으로 산화인듐주석이 널리 사용되고 있으나 인듐 가격의 상승과 산화인듐주석 전극 자체의 크랙 특성으로 인하여 많은 문제점이 지적되고 있다. 이러한 문제를 극복하기 위하여 GaN계 발광 다이오드에 있어서 산화인듐주석 투명 전극의 대체 물질들에 대한 많은 연구들이 활발하게 이루어 지고 있다. 특히, 투명전극 층으로 사용되는 산화인듐주석 대체 박막으로 산화아연에 대한 연구가 각광을 받고 있는 실정이다. 또한, 발광 다이오드의 효율 증가를 위해 발광소자에 표면 요철 구조 형성과 나노구조체 형성 등 박막 표면의 구조 변화를 통한 광추출효율 향상에 대한 많은 연구가 진행되고 있다. 본 연구에서는 산화아연 박막을 투명전극으로 사용하였으며 광추출효율 향상을 위해 산화아연 투명전극에 패터닝을 형성하고, 그 위에 산화아연 나노막대를 형성하여 기존에 사용하던 산화아연 투명전극보다 우수한 추출효율 및 전류 퍼짐 향상 구조를 제안하고 이에 따른 LED 소자의 광추출효율 향상을 연구하였다. 금속유기화학증착법을 이용하여 c-면 사파이어 기판에 n-GaN, 5주기의 InGaN/GaN 다중양자우물 구조 및 p-GaN의 간단한 LED구조를 성장한 후, p-GaN층 상부에 원자층 증착법을 이용하여 투명전극인 산화아연 박막을 60 nm 두께로 증착하였다. 산화아연 투명전극만 증착한 LED-A와 이후 0.1% HCl을 이용한 습식식각을 통하여 산화아연 투명전극에 육각형 모양의 패턴을 형성한 LED-B, 그리고 LED-B위에 전기화학증착법을 이용하여 $1.0{\mu}m$의 산화아연 나노 막대를 증착한 LED-C를 제작하였다. LED-A, -B 및 -C에 대한 표면 구조는 SEM이미지를 통하여 확인한 바 산화아연의 육각 패턴과 그 상부에 산화아연의 나노막대가 잘 형성된 것을 확인하였다. I-L 분석으로부터 패턴이 형성되지 않은 산화아연 투명전극으로만 구성된 LED-A에 비하여 산화아연 투명 전극에 육각 패턴을 형성한 LED-B의 전계 발광 세기가 더욱 큰 것을 확인하였다. 또한, 육각 패턴에 산화아연 나노막대를 성장시켜 융합구조를 형성한 LED-C에서는 LED-B와 -A보다 더 큰 전계 발광세기를 확인할 수 있었다. 특히, 인가 전류가 고전류로 갈수록 LED-C의 발광세기가 더욱 강해지는 것으로 효율저하현상 또한 나노융합구조의 LED-C에서 확인할 수 있었다. 이는 기존 산화아연 투명전극에 육각형의 패턴 및 나노막대융합구조를 형성할 경우 전류퍼짐현상을 극대화 할 뿐 아니라, 추가적인 광추출효율 향상 효과에 의해 질화갈륨 기반LED 소자의 광효율이 증가된 것으로 판단된다.

• Journal of the Korean Chemical Society
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• v.38 no.11
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• pp.833-840
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• 1994

8-Quinolinecarboxaldehyde (1) reacted with 1,5-hexadiene (2) in THF under Wilkinson's catalyst(3) and $AgBF_4(8)$ to give a mixture of 8-quinolinyl 5-hexenyl ketone (4) and 8-quinolinyl 5-hexen-2-yl ketone (9) at initial reaction stage. The reason for the formation of the branched alkenyl ketone 9 is supposed to be that the vacant coordination site, generated from Wilkinson's catalyst and $AgBF_4(8)$, makes it possible to form the 5.5 membered ring metallacycle intermediate. The higher the concentration of $AgBF_4(8)$ was used, the greater the ratio of 9 to 4 was observed. Longer reaction time and high temperature induced isomerization of 9 and 4 to 10 and 5. Especially the high reaction temperature increased the possibility of cyclization of the 5-hexenyl metal intermediate to give 8-quinolinyl cyclopentylmethyl ketone (11).

• Maxillofacial Plastic and Reconstructive Surgery
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• v.13 no.2
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• pp.167-176
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• 1991

This is three case-reports of pleomorphic adenomas arising from one parotid gland and two minor salivary glands treated by total parotidectomy and complete enucleation. We conclude as follows : 1. During the parotidectomy, we tried to preserve the facial nerve by retrograde approach to the trunk from the mandibular branch where it passes over the posterior facial vein. Although the paresis of the lower lip following the operation was seen, it disappeared in about 3 months. 2. Microscopically, the tumor of the first patient (case 1) contained equally myxoid and cellular components and showed well encapsulation. 3. In the second patient (case 2), the tumor revealed large areas of hemorrhage, cystic change, dystrophic calcification and stromal hyalinization, but no definite evidence of carcinoma, therefore we labeled this tumer as "atypical mixed tumor". 4. In the third patient (case 3), the tumor showed principally myxoid component and incomplete capsule, but the tumor was well demarcated.

• Journal of the Korean Chemical Society
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• v.22 no.6
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• pp.386-395
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• 1978

The rates of the forward mutarotation of poly(trans-5-methyl-L-proline) in trifluoro-ethanol and of the reverse mutarotation in trifluoroethanol-n-butanol (1:4 v/v) have been measured at a number of temperatures and polymer concentrations. It was found that both mutarotations are of first-order with respect to the polymer concentration. A modified Arrhenius equation to evalute the activation energy was derived for the reaction kinetics, in which the relation between the measured physical properties and concentration, and the order of tle reaction are uncertain. The activation energies for the forward and reverse mutarotation were found to be 32.5 and 33.5 kcal per residue mole, respectively, which are about 10 kcal per residue mole higher than the $E_a$ for the mutarotation of polyproline (the resonance energy of amide bonds). The excessive quantity of the activation energy was attributed to the steric barrier between carbonyl and methyl groups during the cis-trans isomerization of amide bonds in the polymer.

• Journal of the Korean Chemical Society
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• v.22 no.1
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• pp.45-51
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• 1978

The luminescence of N-methyllutidone is studied in ethanol matrix at $77^{\circ}C$K. No fluorescence is observed but a strong phosphorescence with the quantum yield of 0.1 and the lifetime of 0.2 sec is recorded. An unusually high triplet energy of 85.1 kcal/mole is determined for the compound from the O-O band of phosphorescence. The cis ${\leftrightarrow}$ trans photoisomerization of high triplet energy olefins such as 2-hexene and trans-1,4-dichlorobutene-2 is efficiently sensitized by N-methyllutidone substantiating the high triplet energy of the compound. The negative polarization of O-O band reveals the emitting triplet state to be $({\pi},{\pi}^*)^3$ state. Alkaline metal salts such as lithium chloride enhances the phosphorescence intensity through cation-N-methyllutidone coordination widening the gap between $({\pi},{\pi}^*)^3$and $(n,{\pi}^*)^3$ states.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.146-153
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• 2008

Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.147-152
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• 2005

The structural evolution of $Ni(400\;\AA)/Au(400\;\AA)$ films on p-type GaN during thermal oxidation in ai. was investigated by in situ x-ray scattering experiments. These results indicate that Ni layer and Au layer intermix during thermal oxidation. Au-rich solid solutions containing the different amount of Ni atoms are formed during oxidation. The Ni atoms in Au-rich solid solution out-diffuse as the oxidation proceeds resulting in the formation of NiO(111) phase. Despite of the complete oxidation at $650^{\circ}C$, the position of bulk Au(111) diffraction profile indicates that small amount of Wi atoms are still incorporated in the Au phase.