• Journal of the Korean Chemical Society
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• v.52 no.4
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• pp.387-393
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.162-162
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• 2005

• Korean Journal of Plant Taxonomy
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• v.35 no.4
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• pp.313-335
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• 2005

Many plants take up soluble silica from the soil, and they deposit in plant tissues. Silica bodies are most commonly found in the leaf epidermis. Silica body is important factor in growth and development of plant. It help to maintain rigidity in stem and linear leaves, and its content may be correlated with resistance to fungal disease. In this study, several morphologically distinctive forms of silica bodies on Cyperaceae in Korea are recognized, which are eventually classified into two groups. Silica body type of first group (Rhynchospora, Fuirena, Scleria, Carex, Eriophorum) is A-type, which is conical in shape. Silica body type of second group (Cyperus, Scirpus, Eleocharis, Fimbristylis, Kyllinga, Bulbostylis, Lipocarpha) is B-type, which is conical in shape with numerous satellite body. These types are consistent enough to use as characters in taxonomic studies within genus. Silica body type may be associated with habitat: the species in dry region have A-type, whereas the species in wet region have B-type. These results suggested that shapes and presence or absence of silica body might be valuable to systematic analysis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.709-709
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• 1995

원거리 플라즈마 화학증착법을 이용하여 저온에서 이산화규소박막을 제조하였다. 본 연구 에서는 공정변수인 기판의 온도, 반응기체의 조성 및 분압과 플라즈마 전력에 따른 산화막의 재료적인 물성을 평가하였다. XPS결과에서 산화막은 양론비(O/Si=2)보다 약간 적어 실리콘이 많이 함유된 막으로 나타났다. 이 경우 굴절율과 ESR분석에 의해 미결합된 실리콘의 양이 증가함을 알 수 있었다. SIMS분석에 의해 미량의 질소성분이 계면에 존재하는 것과 실리콘 미결함을 관찰하였다. FT-IR로부터 막내 수소량을 정량화하였으며 결합각 분포는 200℃이상에서 열산화막과 비슷한 값을 얻었다. 하지만 열산화막에 비해 높은 식각율을 보여 계면 스트레스에 의해 막내의 결합력이 약해진 것으로 생각된다.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.133-133
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• 1994

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.3-3
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• 1996

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.436-440
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• 2009

This study demonstrates the use of a chemical lung containing potassium superoxide to convert carbon dioxide in air to oxygen. In order to reduce its extremely high reactivity, potassium superoxide was first mixed with calcium hydroxide and then combined at various ratios with polysiloxane. Silicone polymer used here served as both a water repellent and the polymer matrix. In general, the amount of carbon dioxide captured as well as that of oxygen produced increased as the proportion of potassium superoxide in the chemical lung increased. FT-IR spectroscopy revealed that the Si-O bond in chemical lung appeared at $1,050cm^{-1}$ and absorbance of chemical lung containing higher amounts of silicone was higher than that of chemical lung containing lower amounts. These results indicate that such a chemical lung may also be a useful sorbent for other acid gases, such as sulfur oxides and nitrogen oxides.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.15-15
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• 1997

• Journal of Convergence for Information Technology
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• v.10 no.8
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• pp.137-143
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• 2020

This study examined the effects of rapid thermal annealing (RTA) on the physical and chemical characteristics of thin silver (Ag) layers on SiO2 coated metal foils. Ag layers were annealed at various temperatures of the range between 150 ℃ and 550 ℃ for 20 min. The surface roughness and resistivity are increased at the annealing temperatures of 550 ℃. We also found that oxygen (O) and silicon (Si) atoms exist at the Ag film surface by using compositional analysis in the annealing temperatures of 550 ℃. The total reflectance is decreased with increasing temperature. These phenomena are due to an out-diffusion of Si atoms from SiO2 layers during the RTA annealing. The results offer the possibility of using it as a substrate for various flexible optoelectronic devices.