• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.13-19
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• 2004

This paper demonstrates the detailed study of a microstrip Yagi-Uda antenna with and without PBG structure at wireless LAN(5725∼5825 MHz) frequency band. The impedance bandwidth of the antenna with the PBG holes is greater than (about 30 MHz) that of its counter part without PBG holes. The measured gains of the antenna at the frequency band are 7 dB and 6 dB respectively for antenna with and without PBG. The improvement of gain of about 1 dB is likely due to the suppression of surface wave.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.05a
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• pp.1170-1175
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• 2003

Recently, the disturbance caused by an optical disk vibration and the external vibration/shock are more serious problem in an optical disk drives (ODD) as an ODD become small size and rotation speed increases. The conventional controller cannot cope with the mentioned problems properly when the disturbance and vibration are larger than some range. Therefore, we propose a new control scheme using a disturbance observer (DOB) and it can control the aforementioned problems. The designed the controller is applied to a commercial ODD in focusing direction, then its validity is proved by experimental method. By rising the disturbance observer theory, the focusing performance is conspicuously improved in the presence of sinusoidal vibrations or a shock disturbance. This algorithm also applies to a tracking structure also, because focusing structure is very similar to it.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1147-1155
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• 2000

The installation of wireless communication system for various services of ITS at 5.8 GHz generates mutual interference. The representative example, the sharing of frequency between DSRC system and ETC system is a cause of communication error or disturbance both sides or one side owing to mutual interference. As a solution, a Shield Plate, Antenna Directionality, Power Control is proposed, but these are not perfect solution, because a RSU doesn't have the information of position of interferer. This paper applies an adaptive array antenna which makes a gain for desired users, makes a null for interferer, to up-link, down-link of DSRC and ETC system. The analysis of BER performance shows the effect of reduced interference about 20 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.25-30
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• 2002

In this paper, high quality silicon nitride film is achieved using Plasma Enhanced Chemical Deposition(PECVD) system, and applied in passivating PHEMT's. Passivated PHEMT's(60 ${\mu}{\textrm}{m}$$\times$2 fingers) showed an increase of 2.7 % and 3 % in the drain saturation current and the maximum transconductance, respectively. The current gain cut-off frequency of 53 ㎓ and maximum oscillation frequency of 105 ㎓ were obtained from the fabricated PHEMT's.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.228-232
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• 1995

We have made modulation doped SMQW-PBH-DFB-LD for high speed optical communications. The waveguide and barrier layers were doped by Zn with the concentration of $1.2 \times 10^{18}cm^{-1}$. Mean threshold current and slope efficiency were 24.88 mA (minimum 16 mA) and 0.197 mW/mA (maximum 0.275 mW/mA) respectively. Linewidth enhancement factor ($\alpha$) of MD-SMQW-PBH-DFB-LD was reduced than that of SMQW-PBH-DFB-LD. Linewidth enhancement factor of 1.8 owes to the large gain coefficient of modulation doped active layer. The resonance frequency was linearly increased with the square root of optical power. The resonance frequency in small signal modulation was measured as 8 GHz and -3 dB modulation bandwidth was 10 GHzat $46mA(I_{th}+30mA)$..

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.9 s.100
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• pp.932-940
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• 2005

In this paper, a planar half-circle shape ultra-wideband(UWB) antenna fed by CPW is designed, fabricated and measured for UWB communications. Within the UWB band(3.1 GHz${\~}$10.6 GHz), 5.15 GHz${\~}$5.825 GHz frequency band is used by IEEE 802.1la WLAN applications. It may be necessary to notch out this band to avoid interference with IEEE 802.1la WLAN. Therefore, we have proposed three kinds of UWB antennas having a notch function, such as a rectangular slot, a hat-shaped slot a circle-shaped slot. The notch frequency of the proposed antenna can be adjusted by controlling the slot length or slot width. From the measured results, the proposed antennas show a good gain flatness except the IEEE 802.1la WLAN frequency band and have a reasonable agreement with simulated results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.10
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• pp.1151-1156
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• 2012

In this paper, the baseband filter is proposed in order to maintain a constant sensitivity regardless of distances for 77 GHz automotive radar system. Using existing DCOC loop circuit can remove DC offset and also cancel differences of received power depending on the distance. Measured results show that the maximum gain is 51 dB and high pass cutoff frequency can be tuned from 5 kHz to 15 kHz. The slope of high pass filter can be tuned from -10 to -40 dB/decade for the distance compensation. The measured NF and IIP3 are 26 dB and +4.5 dBm with 4.3 mA at 1.0 V supply voltage, respectively. The fabricated die size $500{\mu}m{\times}1,050{\mu}m$ excluding the in/out pads.