• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.950-954
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• 2003

This paper presents the delivered power and reflection coefficient in metallic shielding enclosure excited by the interior source, which are evaluated with the method of moments, and describes a method for reducing the radiation of electromagnetic fields in the cavity by putting lossy dielectric material in one inside wall. In this paper we introduce carbon polystyrene-foam as lossy dielectric material and observe it's effects of reduction when the thickness and permittivity of lossy dielectric material are changed. The results show that the reduction of the electromagnetic radiation can be achieved by controlling the amount of carbon in lossy dielectric material. The theoretical analysis is verified by the measured delivered power.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.249-253
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• 2010

After the specimen of A-site defect perovskite $La_{1/3}NbO_3$ single crystal was manufactured, the dielectric properties were studied between the temperature range of 10 and 800 K. The dielectric anomaly appeared at 50 K and 650 K, and, at about 650 K, the thermal hysteresis of dielectric constant was shown. The ac-conductivity of bulk showed the lowest activation energy of 0.43 eV at 560~690 K. Based on the results, it is assumed that the dielectric anomaly at 50K and 650 K was due to the antiparallel shift of $Nb^{5+}$-ion and the rearrangement of $Nb^{3+}$-ion, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1167-1173
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• 2001

The tetragonal tungsten bronze type of Sr$_{x}Ba_{1-x}Nb_{2}O_{6}$(SBN) (0.3$\le$x$\ge$0.7) ceramics was synthesized by the solid state reaction method, and the dielectric properties of SBN ceramics as a function of Sr/Ba ratio were examined. With increasing Sr/Ba ratio in SBN ceramics, the Curie temperature decreased and the maximum dielectric constant at the Curie temperature increased. The relaxor behavior of the SBN ceramics as a function of Sr/Ba ratio was quantitatively evaluated. More relaxor behavior of dielectric characteristics was observed as the ratio of Sr/Ba increased. The experimental results are explained with a viewpoint of crystallography of tungsten bronze structured SBN ceramics.

• Elastomers and Composites
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• v.18 no.2
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• pp.51-59
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• 1983

The dielectric properties of polymers are very important when investigating the molecular structure of polymers. The characteristics of the dielectric absorption in vulcanized natural rubber were studied in frequency ranging from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As a result of the study, it has been confirmed that natural rubber vulcanized below 4phr leads to two kinds of dielectric losses due to the interfacial polarization and the dipole polarization by sulfur, and of above 7[%] was only a loss due to the dipole polarization by sulfur. Futhermore, the dielectric loss maximum $tan{\delta}$ spectrum, removed to the low frequency in accordance with increasing sulfur, depends greatly on sulfur. The volume resistivity of $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$, regardless of whether the crosslinking of rubber is weakened by sulfur, was observed.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.403-408
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• 1994

Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.

• Korean Journal of Microbiology
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• v.53 no.4
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• pp.344-346
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• 2017

Lactobacillus plantarum is widely found in fermented foods and has various phenotypic and genetic characteristics to adapt to the environment. Here we report the complete annotated genome sequence of the L. plantarum strain JBE245 (= KCCM43243) isolated for malolactic fermentation of apple juice. The genome comprises a single circular 3,262,611 bp chromosome with 2907 coding regions, 45 pseudogenes, and 91 RNA genes. The genome contains 4 malate dehydrogenase genes, 3 malate permease genes and various types of plantaricin-synthesizing genes. These genetic traits meet the selection criteria of the strains that should prevent the spoilage of apple juice during fermentation and efficiently convert malate to lactic acid.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.90-96
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• 1985

The properties of plasma-enhanced CVD phosphorous silicate glass (PECVD PSG) for passivation layer are studied . Phosphorous contentration was analyzed with X-ray fluores-cence. As a result, PECVD PSG has a limiting phosphors concentration of about 8 mole%. Curves relating to etcll rate, infrared absorption ratio, and sheet resistivity were adapted to monitor phosphorous concentration indirectly Dielectric properties, step coverage, crack resistance, and gettering effect are discussed in both of atmospheric pressure CVD (APCVO) and PECVD oxide. PECVD SiO2 film have density of about 2.4 g/㎤ at deposition rate of 450$\AA$/min, refractive index of about 1.53, and breakdown at fields of II-13 MV/cm. Crack resistance of PECVD oxide is greater than APCVD oxide. PECVD PSG films contained with 2 mole % phosphorous show good step coverage and gettering ability. The obtained results show more advantages in PECVD PSG than in APCVD PSG for device passivation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.1-4
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• 2011

This study was the coorrelation between the electrical properties and the dielectric constant of organic inorganic hybrid type low k SiOC film. SiOC film as low-k films was deposited by the chemical vapor deposition and then annealed at 30 $0{\sim}500^{\circ}C$ to find out the properties of the depending on the temperature and polarity. SiOC film decreased the dielectric constant after annealing process, and the electrical properties were improved at the sample annealed at $400^{\circ}C$. From the XRD patterns, there were two kinds of bonding structures in SiOC film. There was the difference in the bonding structure between the samples annealed under $300^{\circ}C$ and the samples annealed over $400^{\circ}C$. The change was confirmed near $400^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.1-6
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• 1998

The dielectric effects of plastic packages on GaAs($\varepsilon$$_{r}$=13) MMIC microstrip characteristics are analyzed using the spectral domain method (SDM). As being packaged by typical FR-4 composites ($\varepsilon$$_{r}$=14.2) for PCB substrates and plastic packages, the characteristic impedance is reduced by about 6 %, but the effective dielectric constant is increased by 13 % from those of bare microstrip, respectively. The parasitic effects of the packaging materials can greatly degrade the performance of the packaged MMIC. We also calculated the optimum microstrip width, which maintains the 50 $\Omega$ matching condition after plastic packaging. These calculated results can be used to optimize the plastic packages, and extend the application ranges for low cost MMIC production.n.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.990-995
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• 1998

본 연구에서는 PZT(20/80)과 PZT(80/20) 금속 alkoxide용액을 Pt/Ti/$SiO_2$/Si 기판위에 상호 반복시킨 강유전성 PZT(20/80)/PZT(80/20) 이종층 박막을 제작하였다. 건조와 소결을 한번 행한 PZT 이종층 박막의 평균 두께는 약 80~90 nm이었다. 제작된 모든 PZT 박막은 rosette상이 없는 치밀하고 균질한 미세구조를 나타내었으며, 하부의 PZT층은 열처리시 상부 PZT층은 열처리시 상부 PZT 박막의 페로브스카이트 형성에 대해 nucleation site로 작용하였다. 유전상수, 피로특성 및 누설전류특성 등은 단일 조성의 PZT(20/80), PZT(80/20) 박막에 비해 우수한 특성을 나타내었다.