• Journal of the Korea Society for Simulation
• /
• v.29 no.1
• /
• pp.23-30
• /
• 2020

In this paper, we theoretically examine the characteristics of an Artificial Magnetic Conductor (AMC) constructed of a perfect electric conductor and a normal material having permittivity ε_r, permeability μ_r, and thickness L. First, we derived rigorous equations to describe the infinite AMC structure. Then, we studied how the AMC's characteristics are affected by changes in ε_r, μ_r and L. The operating center frequency exhibiting a 0° reflection coefficient phase occurs when L is one quarter of a guide wavelength. Therefore, the AMC thickness can be reduced by using a material having a high product of ε_r and μ_r. As the ratio μ_r/ε_r increases, the bandwidth of the AMC increases (maximum value: 200 %), and its operating frequency decreases. We also find out he bandwidth of the AMC is improved by introducing a loss in the material. To validate the AMC, we design a dipole antenna on the AMC and demonstrate a relationship between AMC phase and dipole antenna's operating frequency by investigating the dipole on the AMC with different pairs of ε_r and μ_r.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.411-418
• /
• 2000

$Al_2O_3$ thin films of 300 nm thickness were deposited at room temperature using DC reactive sputtering with variation of the $O_2$ content in the sputtering gas from 30% to 70%. Regardless of the $O_2$ content in the sputtering gas, the sputtered $Al_2O_3$ films were amorphous and exhibited the refractive index of 1.58. When the $O_2$ content in the sputtering gas was higher than 50%, the $Al_2O_3$ films exhibited excellent transmittance of about 98% at 550 nm wavelength. However, the transmittance decreased to about 94% for the $Al_2O_3$ films deposited with the sputtering gas of the 30% and 40% $O_2$contents. The optimum dielectric properties (dielectric constant of 10.9 and loss tangent of 0.01) was obtained for the $Al_2O_3$ film deposited with the sputtering gas of the 50% $O_2$ content. When the $O_2$ content in the sputtering gas was within 40% to 60%, the $Al_2O_3$ films exhibited no shift of flatband voltage $V_{FB}$ in C-V curves and exhibited leakage current density lower than $10^{-5}\textrm{A/cm}^2$ at 150 kV/cm.

• Journal of Navigation and Port Research
• /
• v.26 no.3
• /
• pp.289-294
• /
• 2002

The broadband high power 3-way combiner was designed and fabricated for the digital TV repeater. To achieve increase of the bandwidth and the high power capability, Wilkinson type power divider was adopted in our research. First of all, Wilkinson type power divider of equal-split and unequal-split were combined, and the characteristics of the four port in-phase power combiner was simulated for each thickness of dielectric substrates. As the results of simulation, the power combiner fabricated by using dielectric substrate of 120 mil-thickness has the characteristics as follows: insertion loss of less than -651 dB, reflection coefficient of less than -13 dB, isolation among the output ports of less than -15 dB, and pose difference among the output ports of smiler than 13$^{\circ}$. Therefore, this power combiner was possible to improve the limit of microstrip line width due to high impedance, the problem of power loss due to interaction between strip lines in a high power combiner and narrow bandwidth simultaneously. Furthermore, making broadband and high power could be achieved since the fabricated 3-way combiner has good characteristics of insertion loss, the reflection coefficient, separation between ports, and phase difference.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.10a
• /
• pp.644-647
• /
• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Journal of Sensor Science and Technology
• /
• v.12 no.1
• /
• pp.10-15
• /
• 2003

$PbTiO_3$/P(VDF/TrFE) thin film for pyroelectric infrared sensor's sensing materials have been fabricated by spin coating technique. 65 wt% VDF and 35 wt% TrFE were for P(VDF/TrFE) powder. $PbTiO_3$ powder was used for a ceramic - polymer composites materials. Surface of composite thin film by ceramic fraction factor was observed by SEM. The $PbTiO_3$/P(VDF/TrFE) thin film capacitancy, dielectric constant and dielectric loss measured by impedence analyzer(HP4192A) and pyroelectric coefficient was measured by semiconductor parameter analyzer(HP4145B).

• Korean Journal of Materials Research
• /
• v.7 no.6
• /
• pp.510-516
• /
• 1997

반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.

• Korean Journal of Materials Research
• /
• v.2 no.3
• /
• pp.220-227
• /
• 1992

Electrorheological(ER) fluid's storage shear modulus(G') and loss factor(${\eta}$) have been directly measured using small amplitude forced oscillating rheometer as a function of oscillating frequency, strain amplitude and applied electric field. Two types of experiment were performed , (a) frequency sweep and (b) amplitude sweep. Two kinds of sample were employed for this experiment ; cornstarch particles in corn oil and zeolite particles in silicone oil. The storage shear modulus was a strong function of driving frequency. Generally, the modulus increased with driving frequency. On the other hand, the loss factor was not well behaved as storage modulus, but as the driving frequency increases the loss factor slightly decreases was the trend of the material's characteristics. Also the modulus was a strong function of strain amplitude. Generally, modulus decreased with increasing strain, but loss factor increases slightly with increasing strain amplitude. For G', cornstarch in corn oil ER fluid has higher values than zeolite based fluid as we increased applied electric field. On the other hand, zeolite based fluid has higher values for ${\eta}$. There is a reasonable agreement between theoretical calculation and experiment.

• Aerospace Engineering and Technology
• /
• v.12 no.1
• /
• pp.32-39
• /
• 2013

All spacecraft components shall be checked for compatibility with vacuum using CVCM and TML in advance. CVCM and TML of the PZT-5 piezoelectric vibrator has to be less than 0.1% and 1.0% respectively. Also, it has less than $500ng/cm^2/hr$ of TQCM for vacuum bake-out test using high temperature and high vacuum. Thus, the piezoelectric vibrator may be employed in the vacuum environments. Finally, it can be confirmed that the characteristics change of the piezoelectric vibrator is less than 1% under vacuum environments. Also, the temperature dependency of the characteristics in the PZT-5 piezoelectric vibrator with the lateral mode was investigated in the range of $-100^{\circ}C$ to $90^{\circ}C$ using the thermal vacuum chamber to utilize the vibrator to the aerospace industries. As the results, at room temperature, the resonant and anti-resonant frequencies had the minimum value, whereas, the dielectric constant increased linearly from about 2500 to 7500 in the given temperature range. The mechanical loss decreased linearly from 0.08 to 0.03.

• Journal of the Korean Ceramic Society
• /
• v.41 no.9
• /
• pp.709-714
• /
• 2004

The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt％ B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt％ of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt％ of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50％ and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt％ B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5％ regardless of the amount of B$_2$O$_3$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.12
• /
• pp.56-65
• /
• 2001

This paper proposes an algorithm for the capacitance extraction of general 3-dimensional conductors in an ideal uniform dielectric that uses a high-order quadrature approximation method combined with the typical first-order collocation method to enhance the accuracy and adopts an efficient matrix-vector product algorithm for the model-order reduction to achieve efficiency. The proposed method enhances the accuracy using the quadrature method for interconnects containing corners and vias that concentrate the charge density. It also achieves the efficiency by reducing the model order using the fact that large parts of system matrices are of numerically low rank. This technique combines an SVD-based algorithm for the compression of rank-deficient matrices and Gram-Schmidt algorithm of a Krylov-subspace iterative technique for the rapid multiplication of matrices. It is shown through the performance evaluation procedure that the combination of these two techniques leads to a more efficient algorithm than Gaussian elimination or other standard iterative schemes within a given error tolerance.