• Journal of forensic and investigative science
• /
• v.2 no.1
• /
• pp.32-51
• /
• 2007

Serial violent crimes have occurred more frequently. Additional attention is paid to relevant areas in which discussions has also increased. This study analyzed Young-cheol Yoo, serial killer case. Two of Yoo's crimes were studied for modus operandi. The cases selected were the premeditated break-in homicide of upper-class elderly people and the impulsive homicide of the Hwanghak-Dong street vendor. Crime motives, targets, times, places, means and methods were analyzed. Profiling techniques in Young-cheol Yoo cases were evaluated and the problems discovered during investigation were discussed. The followings are the findings of the analysis of the serial killer Yoo cases. Yoo exhibited a hatred toward the rich, the elderly, and women as well as a fear of diseases and death. Yoo's crime targets were the elderly residing in wealthy houses, street vendors and prostitutes. The numbers of victims were: 3 men and 5 women victims in 4 homicide cases involving the elderly residents in wealthy houses; one man in 1 street vendor homicide case 11 women in 11 prostitute homicide cases, so total 20 persons were murdered in 16 cases. The time of the crimes were between 10 am and noon in the homicide cases of the elderly and very late at night or early in the morning in the prostitute homicide cases. Means and methods facilitated include the use of a knife as a threat and a hammer made by Yoo to strike the head and face of victims. In the homicide cases involving the elderly, he attempted to disguise the crime scene as a burglary or committed arson to destroy the evidence; in the prostitute homicide cases, bodies were mutilated and buried in secret. 1) Generally each serial killer case has different characteristics, motives, and purposes; while some serial killer cases involve similar methods, others use different methods. Unlike other crimes, serial killers' characteristics and tastes are very different, so it is difficult to explain serial killings based on a specific model. It is important to accurately capture modus operandi of each serial killing and for detectives to familiarize themselves with them. The process of tracing and use of imagination which follows a serial killer's psychology and thought must be used to find out what kind of thoughts pushed the killer to commit the crime. In order to investigate and research difficult subjects such as serial killing, various methods, skills, and relevant knowledge should be studied, and institutional endeavors should go hand in hand with individual efforts.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 1995.04a
• /
• pp.292-297
• /
• 1995

본 연구에서는 점탄성 제진층이 탄성기판의 한 면에 피복된 2층 제진강파느이 모달 손실계수의 관점으로부터 부분도포에 의한 최적설계의 가능성을 검토하였다. 즉, 일정한 두께로 전면 도포되어 있는 2층의 제진층을 작은 크기의 조각(piece)으로 분할한 경우, 각각의 조각이 손실계수에 미치는 영향을 손실계수의 증감율로써 평가하고, 최소 영향부위의 조각을 최대 영향부위에 이동하여, 동일 질랴의 제진재로 최대의 제진효과를 얻을 수 있는 제진재의 최적 설계법을 제안한다. 수치계산은 주변고정 평판의 (1,1)(1,2)(1,3) 모드 성분에 대해 수행하여 최적설계에 의한 손실계수의 증가와 그때 제진재의 배열형상을 조사하였다. 본 수법에 의해 얻어진 결과는 실험결과와 비교 검토하여 본 최적화 수법의 타당성을 확인하였다. 또한, 제진재의 전면도포의 경우는 Ross-Ungar-Kerwin모델에서도 계산을 수행하여 본 수법의 결과와 비교하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.394-394
• /
• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.11a
• /
• pp.363-364
• /
• 2010

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.4
• /
• pp.161-166
• /
• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.3
• /
• pp.96-101
• /
• 2001

In this study, diluted magnetic $Zn_{1-x}Mn_{x}Te$ epilayers were grown on GaAs(100) substrates by hot-wall epitaxy, and their characteristics were systematically examined. The maximum Mn composition of the $Zn_{1-x}Mn_{x}Te$ epilayers was 0.97. The crystallographic orientation was toward <100> and the structure of the $Zn_{1-x}Mn_{x}Te$ epilayers was the zincblende structure, identical to those of the GaAs substrate. With increasing the substrate temperature (350~$400^{\circ}C$), Mn composition increased (0.02~0.23) and he quality of the epilayer became worse. The lattice constants increased linearly with increasing Mn composition, but the band gap energy increased nonlinearly with increasing x.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 1998.05a
• /
• pp.3-8
• /
• 1998

석탄을 이용한 차세대 발전 시스템으로 석탄가스화 복합발전(IGCC, Integrated Gasification Combined Cycle)이 하나의 대안으로 제시되고 있다. 기존 석탄화력 발전소의 발전 효율인 36-38%보다 적어도 2-6% 우수한 효율을 나타내고 있으며 21세기 석탄 이용시 적용될 환경 규제치를 가장 현실적으로 만족시킬 수 있는 차세대 석탄화력발전 시스템으로 평가받고 있다. (중략)

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 2003.05a
• /
• pp.667-672
• /
• 2003

화석연료의 연소로 생성되는 $CO_2$는 지구온난화의 주범으로, 대부분 화력발전 등 에너지 산업에서 발생되는 배가스로 대기 중에 방출되고 있으며, 많은 나라들이 규제를 정하고 있다. 우리나라도 선진국과 같이 2008년부터 자발적 의무를 부담할 것을 요구하는 등 국제적인 요구가 증대되고 있다.(중략)

• Journal of Satellite, Information and Communications
• /
• v.6 no.1
• /
• pp.28-31
• /
• 2011

In this paper, a new set of structural and sacrificial material that is diamond like carbon (DLC)/photoresist for high performance piezoelectric RF-MEMS switches which are actuated in d33 mode is suggested. To avoid curing problem of photoresist sacrificial layer, DLC structure layer is deposited at room temperature by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. And lead zirconate titanate (PZT) piezoelectric layer is deposited on structure layer directly at room temperature by rf magnetron sputtering system and crystallized by rapid thermal annealing (RTA) equipment. Particular attention is paid to the annealing of PZT film in order to crystallize into perovskite and the variation of mechanical properties of DLC layer as a function of annealing temperature. The DLC layer shows good performance for structure layer in aspect to Young's modulus and hardness. The fabrication becomes much simpler and cheaper with use of a photoresist.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.252-257
• /
• 2000

To investigate the thermal preheating effect of the GaAs substrate exerted on the ZnS epilayers for the first time, ZnS epilayers were grown on the GaAs (100) substrate by hot wall epitaxy. The thermal preheating temperature was $450^{\circ}C$~$660^{\circ}C$. The full width at half maximum values of double crystal rocking curve were the smallest for the ZnS epilayers grown on the GaAs thermally preheated at around both $500^{\circ}C$ and $600^{\circ}C$. However, photoluminescence characteristics of ZnS epilayers were better at $600^{\circ}C$ than at $500^{\circ}C$. Therefore, it was shown that the optimum preheating temperature of the GaAs substrate for the growth of high quality ZnS epilayer was around $600^{\circ}C$. From these experimental results, it was shown that the crystal quality and the PL properties of ZnS epilayers were enhanced for the GaAs substrates thermally preheated at $600^{\circ}C$.