• Title/Summary/Keyword: 유도전류

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Evaluating Properties for Bi-layer PZT thin film Fabricated by RF-Magnetron Sputtering System (RF-마그네트론 스퍼터링법으로 제작한 이층형 PZT의 특성평가)

  • Lim, Sil-Mook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.8
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    • pp.222-227
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    • 2020
  • Pb(Zr,Ti)O3(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb1.3(Zr0.52Ti0.48)O3. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm2. This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

Introduction to Geophysical Exploration Data Denoising using Deep Learning (심층 학습을 이용한 물리탐사 자료 잡음 제거 기술 소개)

  • Caesary, Desy;Cho, AHyun;Yu, Huieun;Joung, Inseok;Song, Seo Young;Cho, Sung Oh;Kim, Bitnarae;Nam, Myung Jin
    • Geophysics and Geophysical Exploration
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    • v.23 no.3
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    • pp.117-130
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    • 2020
  • Noises can distort acquired geophysical data, leading to their misinterpretation. Potential noises sources include anthropogenic activity, natural phenomena, and instrument noises. Conventional denoising methods such as wavelet transform and filtering techniques, are based on subjective human investigation, which is computationally inefficient and time-consuming. Recently, many researchers attempted to implement neural networks to efficiently remove noise from geophysical data. This study aims to review and analyze different types of neural networks, such as artificial neural networks, convolutional neural networks, autoencoders, residual networks, and wavelet neural networks, which are implemented to remove different types of noises including seismic, transient electromagnetic, ground-penetrating radar, and magnetotelluric surveys. The review analyzes and summarizes the key challenges in the removal of noise from geophysical data using neural network, while proposes and explains solutions to the challenges. The analysis support that the advancement in neural networks can be powerful denoising tools for geophysical data.

Impedance Parameters of Electrical Double Layer I. A Determination Method of Electrolytic Cell Impedance Parameter on the Platinum Electrode (전기이중층의 임피던스 파라미터 I. 백금전극을 사용한 전해쎌 임피던스 파라미터의 결정방법)

  • Kum-Sho Hwang;Un-Sik Kim
    • Journal of the Korean Chemical Society
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    • v.30 no.3
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    • pp.273-281
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    • 1986
  • This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

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Soft Magnetic Property Depending on thickness of Free Layer in CoFe/Cu/CoFe/IrMn Spin Valve Film (CoFe/Cu/CoFe/IrMn 스핀밸브 박막의 자유층 두께 감소에 따른 연자성 자기저항 특성 연구)

  • Choi, Jong-Gu;Go, In-Suk;Gong, Yu-Mi;Kim, Min-Ho;Park, Young-Suk;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.19 no.2
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    • pp.52-56
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    • 2009
  • Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

Secondary Science Teachers' Perception about and Actual Use of Visual Representations in the Teaching of Electromagnetism (중등 전자기 수업에서 사용하는 시각적 표상에 대한 교사 인식 및 활용 실태)

  • Yoon, Hye-Gyoung;Jo, Kwanghee;Jho, Hunkoog
    • Journal of The Korean Association For Science Education
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    • v.37 no.2
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    • pp.253-262
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    • 2017
  • This study aims at investigating the perceptions of science teachers about the role of visual representations in the teaching of electromagnetism, and finding out how science teachers use visual representations in their teaching of electromagnetism and the difficulties they experience in dealing with those representations. A total of 121 science teachers responded to the online survey. The results showed that most of the teachers agreed to the significance of using visual representations in the classroom but regarded their role as means of simply delivering science knowledge rather than constructing or generating knowledge. For the three visual representations widely used in teaching of electromagnetism in secondary schools (electrostatic induction on electroscope, magnetic field around current carrying wire, structure and principle of electric motor), the teachers preferred teacher-centered use of visual representations rather than student-centered and teacher's construction of representations were the most frequent among four types of use; interpretation, construction, application, and evaluation. The difficulties of teaching with these three visual representations were categorized into several factors; teachers, students, the characteristics of the representations, and lack of resources and classroom environment. Teachers' limited perceptions about the role of visual representations were associated with the ways of using visual representations in their teaching. Implications for the effective use of visual representations for science learning and teaching were discussed.

A Study on T5 28W Fluorescent Lamp Ballast Using a Piezoelectric Transformer and One-chip Microcontroller (One Chip Microcontroller와 압전변압기를 이용한 T5 28W 형광등용 전자식 안정기에 관한 연구)

  • 황락훈;류주현;장은성;조문택;안익수;홍재일
    • The Transactions of the Korean Institute of Power Electronics
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    • v.8 no.1
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    • pp.70-79
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    • 2003
  • In this paper, T5 28-watt fluorescent lamp ballast using a piezoelectric transformer is fabricated and its characteristic is investigated. Developed electronic ballast is composed of basic circuits and blocks, such as rectifier part, active power factor corrector part, frequency oscillation part using microcontroller and feedback control, piezoelectric transformer and resonant half bridge inverters. The fabricated ballast uses to variable frequency methode in external so exciting that the frequency of piezoelectric transformer could be generated by voltage control oscillator using microcontroller(AT90S4433). The current of fluorescent lamp is detected by feedback control circuit. The signal of inverter output is received using Piezoelectric transformer, and then its output transmitted to fluorescent lamp. Traditional electromagnetic ballasts operated at 50-60Hz have been suffered from noticeable flicker, high loss, large crest factor and heavy weight. A new electronic ballast is operated at high frequency about 75kHz, and then Input power factor, distortion of total harmonic and lamp current crest factor are measured about 0.9!35, 12H and 1.5, respectively Accordingly, the traditional ballast is by fabricated electronic ballast using piezoelectric transformer and voltage control oscillator because of its lighter weight, high efficiency, economic merit and saving energy.

Triboelectric Nanogenerator Utilizing Metal-to-Metal Surface Contact (금속-금속 표면 접촉을 활용한 정전 소자)

  • Chung, Jihoon;Heo, Deokjae;Lee, Sangmin
    • Composites Research
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    • v.32 no.6
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    • pp.301-306
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    • 2019
  • Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

Low-power Lattice Wave Digital Filter Design Using CPL (CPL을 이용한 저전력 격자 웨이브 디지털 필터의 설계)

  • 김대연;이영중;정진균;정항근
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.39-50
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    • 1998
  • Wide-band sharp-transition filters are widely used in applications such as wireless CODEC design or medical systems. Since these filters suffer from large sensitivity and roundoff noise, large word-length is required for the VLSI implementation, which increases the hardware size and the power consumption of the chip. In this paper, a low-power implementation technique for digital filters with wide-band sharp-transition characteristics is proposed using CPL (Complementary Pass-Transistor Logic), LWDF (Lattice Wave Digital Filter) and a modified DIFIR (Decomposed & Interpolated FIR) algorithm. To reduce the short-circuit current component in CPL circuits due to threshold voltage reduction through the pass transistor, three different approaches can be used: cross-coupled PMOS latch, PMOS body biasing and weak PMOS latch. Of the three, the cross-coupled PMOS latch approach is the most realistic solution when the noise margin as well as the energy-delay product is considered. To optimize CPL transistor size with insight, the empirical formulas for the delay and energy consumption in the basic structure of CPL circuits were derived from the simulation results. In addition, the filter coefficients are encoded using CSD (Canonic Signed Digit) format and optimized by a coefficient quantization program. The hardware cost is minimized further by a modified DIFIR algorithm. Simulation result shows that the proposed method can achieve about 38% reductions in power consumption compared with the conventional method.

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강유전체 $Pb(Zr,Ti)O_3$박막에 대한 분극피로와 회복현상의 비대칭적인 성질

  • 채병규;박철홍;장민수;권식철
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.84-84
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    • 1999
  • 최근 큰 잔류분극을 가진 강유전체 Pb(Zr, Ti)O3 박막을 이용한 비휘발성 기억소자의 연구가 활발히 진행되고 있다. 그러나 Pb(Zr, Ti)O3 박막을 비휘발성 기억소자로 응용하는 경우 분극피로(polarization fatigue), imprint, 누설전류 등의 문제점이 나타나는 것으로 알려져 있다. 특히 분극반전 횟수가 증가할수록 잔류분극이 감소하는 분극피로 현상은 비휘발성 기억소자의 응용에 있어서 치명적인 장애가 되므로 기억소자의 실용화를 위해서는 분극피로 현상의 개선이 무엇보다 중요하다. 본 연구에서는 Pb(Zr, Ti)O3 강유전체 박막의 분극피로 현상을 규명하고 개선하기 위해서 다음과 같은 세가 실험적 방법으로 접근하였다. 먼저 Pt와 금속산화물인 LaNiO3을 이용하여 상·하부 전극을 달리하여 제조한 축전기에 대해서 분극피로 특성을 관찰하고 이로부터 분극피로 현상에 대한 전극의 효과를 조사하였다. 여기서 금속산화물인 LaNiO3 박막과 Pt 박막은 r.f. 스퍼트 법으로 증가하였으며 Pb(Zr, Ti)O3 박막은 LaNiO3/Si(100)/와 Pt/Ti/SiO2/i(100) 기판위에 졸겔법으로 제조하였다. 다음으로 분극피로된 박막의 상부전극에 극성이 다른 직류전압을 인가해주었을 때 나타나는 분극회복 현상을 광범위하게 관찰하였으며, 특히 직류전압의 극성에 따라 비대칭적인 분극회복 특성을 보였다. 마지막으로 이와 같은 직류전압에 대한 비대칭적인 분극회복현상에 착안하여 양과 음의 방향으로 바이어스된 스윗칭 펄스를 인가하여 분극피로 특성을 조사한 결과 비대칭적인 분극피로 현상을 관찰할 수 있었다. 이와 같은 Pv(Zr, Ti)O3 박막의 분극피로와 회복의 비대칭적인 현상은 분극피로 현상의 기구를 밝히는 중요한 근거가 되었으며, 본 연구에서는 하부 계면에서의 산소빈자리의 역할로 분극피로 현상을 모형화하였다.식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다. 대한 정보(RDF)는 명확하게 얻을 수 있었다.nospec과 SEM으로 관찰하였다. 또한 Ge 함량 변화에 따른 morphology 관찰과 변화 관찰을 위하여 AFM, SEM, XRD를 이용하였으며, 이온주입후 열처리 온도에 따른 활성화 정도의 관찰을 위하여 4-point probe와 Hall measurement를 이용하였다. 증착된 다결정 SiGe의 두게를 nanospec과 SEM으로 분석한 결과 Gem이 함량이 적을 때는 높은 온도에서의 증착이 더 빠른 증착속도를 나타내었지만, Ge의 함량이 30% 되었을 때는 온도에 관계없이 일정한 것으로 나타났다. XRD 분석을 한 결과 Peak의 위치가 순수한 Si과 순수한 Ge 사이에 존재하는 것으로 나타났으며, ge 함량이 많아짐에 따라 순수한 Ge쪽으로 옮겨가는 경향을 보였다. SEM, ASFM으로 증착한 다결정 SiGe의 morphology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에

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Analysis of Electromagnetic Scattering by a Perfectly Conducting Strip Grating on Dielectric Multilayers (다층 유전체 위의 조기적인 도체 스트립 구조에 의한 전자파산란 해석)

  • 윤의중;양승인
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.2
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    • pp.161-172
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    • 1997
  • In this paper, electromagnetic scattering by a perfectly conducting strip grating on dielectric multilayers is analyzed for the normalized reflected and transmitted power by applying the Fourier-Galeakin moment method. The induced current density is expanded in a series of multiplication of chebyshev polynomials of the first kind and functions with appropriate edge boundary condition, the continuous condition of electromagnetic field is applied in the boundary planes. The confirm the validity of the proposed method, the nor- malized reflected and transmitted power obtained by varying the relative permittivity and thickness of each dielectric layers are evaluated and compared with those of the existing numerical method and a paper, and then the numerical results in this paper are in good agreement with those of the existing numerical method and the paper. The sharp variation position in the geometrically normalized reflected and transmitted power can be moved by the incident angle, grating period, and the relative permittivity and thickness of the dielectric multilayers, these sharp variation points which are called the Wood's anomaly of the Geome- trically normalized reflected power are observed as a main factor when the reflected powers of the higher order mode are transitted between propagating and evanescent modes, and the local minimum positions are slightly moved to the left hand direction in which grating period is getting small according to the increase of the relative permittivity of dielectric layers.

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