• Journal of Conservation Science
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• v.6 no.1 s.7
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• pp.15-30
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• 1997

The chamical and physical properties of the fragments of an ancient pottery such as earthenware, gliazed pottery and celadon excavated in Chonnam province has been investigated by X-ray diffraction inductively coupled plasma spectroscopy(ICP), thermal mechanical analysis(TMA). Glazed pottery fragments of Chonnam province are cotaining Fe2O3 $4\~7\%$ by the analyis of ICP, firing temperature range was presumed to $1100-1150^{\circ}C$ by TMA. Celadon fragments of Chonnam province are containing Fe2O3 $2\~3\%$ by the analyis of ICP, firing temperature range was presumed to $1140\~1200^{\circ}C$ by TMA. The charateristics in the trace element composition of an ancient pottery of Chonnam provinceis are similar, it is an reflection of similar geological charateristics. The charateristic elements of Chonnam provincical ancient pottery were Rb, Sr, V, Zr, Y, Nd, Sc, La, Ce, Nb, Sm, Eu, Dy and Yb of the analyzed 21 trace elements. By Fe2O3-Zn ditribution diagram, potteries excavated in Yong-am, celadons excavated in Haenam, Kangjin, Buan and glazed pottery excavated in Hae-nam are grouped into the same class.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.1
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• pp.499-505
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• 2013

Cr(VI)-4-(dimethylamino)pyridine[4-(dimethylamino)pyridinium chlorochromate] was synthesized by the reaction of 4-(dimethylamino)pyridine with chromium trioxide in 6M-HCl, and characterized by IR, ICP. The oxidation of benzyl alcohol using 4-(dimethylamino)pyridinium chlorochromate in various solvents showed that the reactivity increased with the increase of the dielectric constant(${\varepsilon}$), in the order: cyclohexene$H_2SO_4$ solution), 4-(dimethylamino)pyridinium chlorochromate oxidized benzyl alcohol and its derivatives(p-$OCH_3$, m-$CH_3$, H, m-$OCH_3$, m-Cl, m-$NO_2$) smoothly in DMF. Electron-donating substituents accelerated the reaction, whereas electron acceptor groups retarded the reaction. The Hammett reaction constant(${\rho}$) was -0.68(303K). The observed experimental data was used to rationalize the hydride ion transfer in the rate-determining step.

• Journal of Conservation Science
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• v.9 no.1
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• pp.11-20
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• 2000

The body composition of an ancient roofing tiles excavated from Chonnam province has been investigated by X-ray diffraction, and inductively coupled plasma spectroscopy. Ancient roofing tiles were excavated at ancient mountain fortress and kiln sites. The body composition of roofing tiles was different according to the excavated sites. The mineral component of roofing tiles were grouped in the five types and chemical composition was different according to the excavated areas. It is presumed that the body of roofing tiles used low-grade raw materials containing $Fe_2O_3$ 4-10%. The trace element composition of the roofing tiles were different, and it might be all ret1ection of different geological characteristics. The characteristic element of rooting tiles was vanadium element of the analyzed 20 trace elements. By $SiO_2-V$ distribution diagram types, roofing tiles excavated from the Geomdan mountain fortress at Sunchon, kiln site in Yeochon, Gorak and Cheoksan mountain fortress at Yeosu were grouped into the same excavated site.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2017.04a
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• pp.126-126
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• 2017

본 연구는 가축분뇨를 퇴비화 하는 과정에서 흔히 사용되는 수분조절제인 톱밥, 왕겨 등의 가격적 부담으로 인해 좀 더 가격이 저렴한 수분조절제들의 성분을 비교 분석하여 어떤 차이가 있는지 확인하기 위하여 실시되었다. 이를 위해 6가지 수분조절제를 토대로 유도결합플라즈마분광계 장비를 이용하여 화학적 분석, 인장시험기를 이용하여 물리적 분석을 하였다. 화학적 분석을 통해 수분조절제 내 함유되어 있는 성분들을 분석하였으며 물리적 분석을 통해 중량, 함수율, 흡수율, 인장강도 등을 측정하였다. 화학적으로 분석을 했을 시 K, Cd, Pb, Ni, Zn, Cu, Cr, As 등을 측정을 하였으며 앞서 분석했던 각각의 성분들은 농촌진흥청에 명시되어 있는 유해성분의 최대량보다 대부분 적게 측정이 되었다. 물리적으로 분석을 했을 시, 각 수분조절제의 함수율은 최소 10.29%에서 최대 16.07%까지 측정이 되었다. 전단강도는 기존 상태가 가장 높게 측정이 되었으며 다음으로 건조상태 흡수상태로 측정이 되었다. 일반적으로 사용하기에는 흡수율이 가장 높은 우드 브리켓-1이 가장 적합한 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.307-311
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• 2009

In this study, TiCrN films were deposited on STS 316 Land Si (100) wafer by inductively coupled plasma (ICP) assisted D.C. magnetron sputtering. The effect R.F. power for ICP discharge on the mechanical properties of TiCrN films was investigated. XRD, XPS and FE-SEM were used for the structure analysis. Also the Micro-Knoop hardness tester and profilometer were used for measuring hardness of coatings and film stress respectively. As increasing the R.F. power for ICP discharge, thickness of coating was decreased from 1633 nm to 1288 nm but hardness was increased about $Hk_{5g}$ 4200 at 400 W. All of the XRD patterns showed (111), (200) and (220) peaks of TiCrN films. Surface morphology was studied using the profilometer. FE-SEM was used to know morphology and cross-section of the films. Structure of the films was changed dense as increased ICP power.

• Analytical Science and Technology
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• v.9 no.1
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• pp.20-25
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• 1996

Trace levels of uranium and thorium in geologic samples are determined rapidly by a direct wavelength-dispersive X-ray fluorescence method. Relative intensity of scattered tube radiation was used as an internal standard to compensate for variations in instrumental operating characteristics. U and Th can be determined within a precision of ${\pm}10%$ and accuracy of ${\pm}15%$ or less with measuring times of 50 seconds for Th and 400 seconds for U, respectively. The results of XRF analysis were in good agreement with those of other methods such as nutron activation analysis and inductively coupled plasma atomic emission spectrometry.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.23 no.2
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• pp.65-74
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• 2013

Objectives: This study attempted to develop a method to measure ultra-trace lead concentrations in plasma using Inductively Coupled Plasma Mass Spectrometry(ICP-MS) and to test whether plasma lead can be used as a biomarker for the biological monitoring of exposure to lead. Methods: Lead concentrations in 160 plasma samples of field workers and 42 plasma samples from the control group were measured by ICP-MS. Blood zinc protophorphyrin(ZPP) concentrations and urinary ${\delta}$-aminolevulinic acid${\delta}-ALA$) were measured for correlation analysis with plasma lead. Results: The mean lead level in the plasma of the workers exposed to lead at work were 786.1 ng/L. Plasma lead levels were not correlated with blood ZPP or urinary ${\delta}-ALA$ concentrations. Otherwise, plasma lead levels showed a good correlation coefficient of 0.400 with blood lead levels, and their correlation coefficient had a better value of 0.552 for the non-smoking and drinking group. In the general population group which was not exposed to lead in the workplace and was considered the control group, the mean concentration of plasma lead was 123.1 ng/L. The plasma lead levels for the general population group showed a good correlation coefficient of 0.520 with blood ZPP and urinary ${\delta}-ALA$ concentrations.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.176-186
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• 1998

Pure Pt, Co and their alloy thin films with three different compositions (Pt66-Co34, Pt40-Co60 and Pt18-Co82) were deposited on Si(100) wafers and proposed as a set of certified reference materials (CRM) for the quantification and standardization of surface compositional analysis. The compositions of the binary alloy thin films were controlled by in-situ XPS analyses and the certified compositions of the films have been determined by ICP-AES and RBS analyses after thin film growth. Through comparison of the compositions determined by in-situ XPS with those by ICP, relatively accurate compositions could be obtained with a matrix effect correction. Standard deviations of XPS and AES round robin tests with the Pt-Co alloy thin films were large up to about 4%. On the other hand, the average compositions of the Pt-Co alloy thin films by two methods were in a good agreement within 1%. The formation of a Pt rich surface layer by ion beam sputtering indicates that the surface modification by preferential sputtering must be understood for a better compositional analysis.