• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.04b
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• pp.192-197
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• 1993

반도체 기억소자의 급격한 발전추세에 대응하기 위해서는 노광(exposure) 장비의 증첩정밀도 (overlay accuracy)가 같이 개선되어야 한다. 본 연구에서는 64M ERAM 제조를 목적으로개발된 스텝 퍼(stepper) 시스템의 성능평가 항목 중에서 증첩정밀도에대한 측정방법 및 현재까지의 연구결과를 기술하였다. 제작된 웨이퍼 정렬계는 off-axis 및 TTL 광학계와 이들 정렬신호에 따라 움직이는 웨이 퍼 구동계로 구성되어 있다. off-axis 광학계는 화상처리와 회절의 두 가지 방식이 가능하도록 설계 제작되었으며, TTL 광학계는 dual beam interferometric method를 이용하였다. 본 실험의 결과는 웨이퍼 정렬계의 특성을 평가한 것으로서, 현재까지 off-axis 정렬 방법만으로 얻은 증첩정밀도는 0.26-0.29$\mu$m (m+3 $\sigma$ )이다. 따라서 여기에 이미 제작되어 있는 TLL 정렬광학계를 추가로 사용하면 0.1 $\mu$m 이하의 정밀도에 이를 것으로 예측된다.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.68-74
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• 1995

한국전자통신연구소에서 개발된 바 있는 KrF 엑시머 레이저 스탭퍼의 개발 과정과 그 결과를 보이고, 동시에 현재 개발중인 ArF 엑시머 레이저 스텝퍼의 진행상황을 보고한다. 본 논문에서는 스탭퍼의 주요 구성요소인 조명계, 투영광학계, 웨이퍼 자동초점 및 자동정렬 시스템을 중심으로 설명하여, KrF와 ArF 에시머 레이저 스탭퍼간의 차이점과 그 특성들을 상호 비교한다.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.1
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• pp.150-156
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• 1994

To meet the process requirement of semiconductor device manufacturing, it is necessary to improve the alignment accuracy in exposure equipments. We developed the excimer laser stepper and will describe the methodology for alignment measurement and experimental results. Our wafer alignment system consists of off-axis optics, TTL(Through The Lens) optics and high precision stage. Off-axis alignment utilizes the image processing and /or diffraction from thealign marks of off-centered chip area. On the other hand, TTL alignment can be used for the die-by-die alignment using dual beam interferometry. When only off-axis alignment was used, the experimental alignment error(lml+3 .sigma. ) was 0.26-0.29 .mu. m, and will be reduced down to 0.15 .mu. m by adding TTL alignment.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1993.10a
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• pp.243-248
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• 1993

New methodology for fiducial alignment is proposed to improve the alignment accuracy in wafer steppers. The positioning error is detected by PSD(Position Sensitive Detector)when 2-dimensional vernier patterns on a reticle on a reticle are projected on the fiducial marks of wafer stage. The width and period of vernier patterns are deter mined to get the highest S/N ratio for the exposure wavelength 248.4nm of KrF excimer laser. This new method has an advantage of higher accuracy and faster alignment over the conventional one.