• Korean Journal of Materials Research
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• v.10 no.4
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• pp.312-316
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• 2000

A study has been made to investigate the effects of hot isostatic pressing(HIP ping) on bond strength and elevated temperature characteristics of thermal barrier coating(TBC). The specimens were prepared by HIPping of TBC which is composed of the ceramic top coat(8wt%$Y_2$$O_3$-$ZrO_2$) and the metallic bond coat on the matrix of IN738LC superalloy. The results showed that the porosity and microcracks in the ceramic top coat of TBC were significantly decreased by HIP. As a result, the bond strength of the HIPped coating was increased above 48% compared to that of as-coated specimen and microstructure was homogenized. It was found that the thermal cycle resistance of HIPped coating was inferior to that of as-coated specimen. It was considered that this result was mainly caused by the reduction of internal defects in the top coat layer which could play a role in relaxing the thermal stress due to a large difference in thermal expansion between TBC and matrix.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.497-502
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• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.328-336
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• 1998

In metal-carbon system with no mutual solubility between matrix and alloying elements as solid or liquid phases, Cu-C-X nanocomposite metal powders were prepared by high energy ball milling for solid-lubricating bronze bearings. Elemental powder mixtures of Cu-lOwt.%C- 5wt. %Fe and Cu- lOwt. %C- 5wt. %Al were mechanically alloyed with an attritor in an argon atmosphere, and then microstructural evolution of the Cu-C-X nanocomposite metal powders was examined. It has been found that after 10 hours of MA, the approximately 10$\mu\textrm{m}$ sized Cu-C- X nanocomposite metal powders can be produced in both compositions. Morphological characteristics and microstructural evolution of the Cu-C-X powders have shown a similar MA procedure compared to those of metal-metal system. As a result of X - ray diffraction analysis, diffraction peaks of Cu and C were broaden and peak intensities were decreased as a function of MA time. Especially, the gradual disappearance of C peaks in the X- ray spectra is proved to be due to the lower atomic scattering factor of C. The calculated Cu crystallite sizes in Cu- C- X nanocomposite metal powders by Williamson- Hall equation were about lOnm size, on the other hand, the observed ones by TEM were in the range of 10 to 30nm.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.37-39
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• 2001

21세기의 벽두부터 국내외적으로 활발히 논의되고 있는 나노기술에 대한 정의를 생각해보는 것으로부터 우리가 나아갈 방향을 살펴보고자 한다. 나노기술이란, 원자 하나 하나 혹은 분자단위의 조작을 통해 1~100nm정도의 범위 안에서 근본적으로 새로운 물질이나 구조체를 만들어 내는 기술을 말한다. 즉 앞으로 우리는 경험해 보지 못한 새로운 현상에 대한 이해를 할 수 있어야 하고, 새로운 물질 자체를 다룰 수 있는 방법이 우리가 해야 할 구체적인 일이 될 것이란 말이 된다. 뿐만 아니라 나노기술은 종래의 정보.통신.전자 분야에서 주로 추구하던 마이크로화와 달리 재료, 기계, 전자, 의학, 약학, 에너지, 환경, 화학, 생물학, 농학, 정보, 보안기술 등 과학기술 분야 전반을 위시하여 사회분야가지 새로운 인식과 철학적인 이해가 필요하게 되었다. 21세기를 맞은 인류가 나아갈 방향을 나노세계에 대한 도전으로 보아야 하며, 과학기술의 새로운 틀을 제공할 것 임에 틀림 없다. 그러나, 이와 같은 나노기술의 출발점을 살펴보면 VLSI기술로 통칭할 수 있는 마이크로전자소자 기술이란 점이다. 국내의 VLSI기술은 메모리기술이라고 해도 과언이 아닐 것이다. 문제는 종래의 메모리기술은 대규모 투자와 집중적인 인력양성을 통해서 세계 최고 수준에 도달 할 수 있었다. 그러나 여기까지 오는 동안 사식 우리는 선진국의 뒷꽁무니를 혼신의 힘을 다해 뒤쫓아 온 결과라고 보아도 틀리지 않는다. 즉, 앞선자를 보고 뒤쫓는 사람은 갈방향과 목표가 분명하므로 최선을 다하면 따라 잡을 수 있다. 그런데 나노기술은 앞선 사람이 없다는 점이 큰 차이이다 따라서 뒷껑무니를 쫓아가는 습성을 가지고는 개척해 나갈 수 없다는 점을 깨닫지 않으면 안된다. 그런 점에서 이 시간 나노기술의 국내외 현황을 살펴보고 우리가 어떻게 할 것인가를 생각해 보는데 의미가 있을 것이다.하여 분석한 결과 기존의 제한된 RICH-DP는 실시간 서비스에 대한 처리율이 낮아지며 서비스 시간이 보장되지 못했다. 따라서 실시간 서비스에 대한 새로운 제안된 기법을 제안하고 성능 평가한 결과 기존의 RICH-DP보다 성능이 향상됨을 확인 할 수 있었다.(actual world)에서 가상 관성 세계(possible inertia would)로 변화시켜서, 완수동사의 종결점(ending point)을 현실세계에서 가상의 미래 세계로 움직이는 역할을 한다. 결과적으로, IMP는 완수동사의 닫힌 완료 관점을 현실세계에서는 열린 미완료 관점으로 변환시키되, 가상 관성 세계에서는 그대로 닫힌 관점으로 유지 시키는 효과를 가진다. 한국어와 영어의 관점 변환 구문의 차이는 각 언어의 지속부사구의 어휘 목록의 전제(presupposition)의 차이로 설명된다. 본 논문은 영어의 지속부사구는 논항의 하위간격This paper will describe the application based on this approach developed by the authors in the FLEX EXPRIT IV n$^{\circ}$EP29158 in the Work-package "Knowledge Extraction & Data mining"where the information captured from digital newspapers is extracted and reused in tourist information context.terpolation performance of CNN was relatively better than NN.콩과 자연 콩이 성분 분석에서 차이를 나타내지 않았다는 점, 네 번째. 쥐를 통한 다양섭취 실험에서 아무런 이상 반응이 없었다는 점등의 결과를 기준으로 알레르기에 대한 개별 검사 없이 안전한

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.12
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• pp.1257-1263
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• 2015

A correlation between the transient regime and steady state regime on the creep crack growth (CCG) for Grade 91 steel, which is used as the structural material for the Gen-IV reactor systems, was investigated. A series of CCG tests were performed using 1/2" CT specimens under a constant applied load and at a constant temperature of $600^{\circ}C$. The CCG rates for the transient and steady state regimes were obtained in terms of $C^*$ parameter. The transient CCG rate had a close correlation with the steady-state CCG rate, as the slope of the transient CCG data was very similar to that of the steady state data. The transient rate was slower by 5.6 times as compared to the steady state rate. It can be inferred that the steady state CCG rate, which is required for long-time tests, can be predicted from the transient CCG rate obtained from short-time tests.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.99-105
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• 2014

$LiCoO_2$ thin film have received attention as cathodes of thin-film microbatteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and electrochemical properties were investigated under annealing temperature and time. The phycochemical properties of $LiCoO_2$ thin film were investigated by X-ray diffraction, scaning electron microscopy and atomic force microscopy. The electrochemical properties were characterized using galvanostatic charging/discharging cycling tests. From X-ray diffraction, as-grown films annealed at $550^{\circ}C$ and $750^{\circ}C$ are presumed to be spinel structure and a single phase of the layered-rock-salt, respectively. The RMS roughness and grain size of the films which annealed at $750^{\circ}C$ has similar values for annealing time 10 and 30 min, while for annealing time 120 min surface roughness, grain size increase and pore appearance were observed. The first discharge capacity of $LiCoO_2$ thin films annealed at $750^{\circ}C$ for 10, 30 and 120 min is about 54.5, 56.8 and $51.87{\mu}Ah/cm^2{\mu}m$, respectively. Corresponding capacity retention at 50th cycle is 97.25, 76.69, 77.19%.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.3
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• pp.251-257
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• 2011

This paper deals with the statistical properties of parameters B and q in the creep crack growth rate (CCGR) law, da/dt=B$(C^*)^q$, in Mod. 9Cr-1Mo (ASME Gr.91) steel which is considered a candidate materials for fabricating next generation nuclear reactors. The CCGR data were obtained by creep crack growth (CCG) tests performed on 1/2-inch compact tension (CT) specimens under an applied load of 5000N at a temperature of $600^{\circ}C$. The CCG behavior was analyzed statistically using the empirical equation between CCGR, da/dt and the creep fracture mechanics parameter, $C^*$. The B and q values were determined for each specimen by the least-squares fitting method. The probability distribution functions for B and q were investigated using normal, log-normal, and Weibull distributions. As far as this study is considered, it can be appeared that B and q followed the log-normal and Weibull distributions. Moreover, a strong positive linear correlation was found between B and q.