• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.37.2-37.2
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• 2011

반도체공정에서 Photo-lithography는 특정 광원을 사용하여 구현하고자 하는 패턴을 기판상에 형성하는 기술이다. 이러한 Photo-lithography 공정에서는 패턴이 형성되어 있는 마스크가 핵심적인 역할을 하며 반도체소자의 전체적인 성능을 결정한다. 이에 따라 Photo-lithography용 마스크에 사용되는 Blank 마스크는 Defect의 최소화 및 우수한 평탄도 등의 조건들이 요구되고 있다. 이러한 Blank 마스크 재료로 광원을 효율적으로 투과시키는 성질이 우수하고 다른 재료에 비해 열팽창계수가 작은 석영기판이 사용되고 있다. 석영 기반의 마스크는 UV Lithography에서 주로 사용되고 있으며 그 밖에 UV-NIL (Nano Imrpint Lithography), EUVL (Extreme Ultra Violet Lithography) 등에도 이용되고 있다. 석영기판을 가공하여 Blank 마스크로 제작하기 위해 석영기판의 Lapping/Polishing 등이 핵심기술이며 현재 일본에서 전량 수입에 의존하고 있어, 이에 대한 연구의 필요성이 절실한 상황이다. 본 연구에서는 Blank 마스크제작을 위한 석영기판의 Polishing 공정에 사용되는 Ceria Slurry의 특성 연구 및 이에 따른 연마평가를 실시하였으며 첨가제의 조건에 따른 pH/Viscosity/Stability 등의 물리적인 특성을 관찰하여 석영기판 Polishing에 효율적인 Ceria slurry의 최적조건을 도출했다. 또한, 조건에 따른 Slurry의 정확한 분석을 위해 Zeta Potential Analyzer를 이용하여 연마입자의 크기 및 Zeta Potential에 대한 평가를 실시한 후 연마제와 석영기판의 Interaction force를 측정하였다. 상기 실험에 의해 얻어진 최적화된 연마 공정 조건하에서 Ceria slurry를 사용하여 연마평가를 실시함으로써 Removal Rate/Roughness 등의 결과를 관찰하였다. 본 연구를 통해 반도체 photo mask 제작을 위한 Ceria slurry의 주요특성을 파악하고 석영기판의 Polishing에 효율적인 조건을 도출함으로써 Lithography 마스크를 효율적으로 제작할 수 있을 것으로 예상된다.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.156.2-156
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• 2003

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.3
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• pp.259-264
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• 2012

Automatic magnetic abrasive polishing (MAP), which can be applied after machining of a mold on a machine tool without unloading, is very effective for finishing a free-form surface such as a complicated injection mold. This study aimed to improve the efficiency of MAP of a non-ferrous mold surface. The magnetic array table and control of the electromagnet polarity were applied in the MAP of a free-form surface. In this study, first, the magnetic flux density on the mold surface was simulated to determine the optimal conditions for the polarity array. Then, the MAP efficiency for polishing a non-ferrous mold surface was estimated in terms of the change in the radius of curvature and the magnetic flux density. The most improved surface roughness was observed not only in the upward tool path but also in the working area of larger magnetic flux density.

• Journal of the Korea Organic Resources Recycling Association
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• v.32 no.1
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• pp.21-29
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• 2024

In this study, EMC(Epoxy molding compound) waste from the semiconductor molding process is recycled and synthesized into silica nanoparticles, which are then applied as abrasive materials contains CMP(Chemical mechanical polishing) slurry. Specifically, silanol precursor is extracted from EMC waste according to the ultra-sonication method, which provides heat and energy, using ammonia solution as an etchant. By employing as-extracted silanol via a facile sol-gel process, uniform silica nanoparticles(e-SiO₂, experimentally synthesized SiO₂) with a size of ca. 100nm are successfully synthesized. Through physical and chemical analysis, it was confirmed that e-SiO₂ has similar properties compared to commercially available SiO₂(c-SiO₂, commercially SiO₂). For practical CMP applications, CMP slurry is prepared using e-SiO₂ as an abrasive and tested by polishing a semiconductor chip. As a result, the scratches that are roughly on the surface of the chip are successfully removed and turned into a smooth surface. Hence, the results present a recycling method of EMC waste into silica nanoparticles and the application to high-quality CMP slurry for the polishing process in semiconductor packaging.

• Tribology and Lubricants
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• v.28 no.1
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.964-967
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• 2002

An internal finishing process by the application of magnetic abrasive machining has been developed as a new technology to obtain a fine inner surface of pipe. In this paper, another method of magnetic abrasive machining in which the N and S magnetic poles are feed and a workpiece is rotated only is tried in a fine-pipe, and its finishing characteristics is experimently investigated by various effective factors such as feeding amplitude. From the experimental results, it is found that the feed effects of magnetic poles on the finishing characteristics are large in internal finishing.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.10a
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• pp.313-317
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• 2003

Micro-Channel ultra-precision polishing is a new technology used in magnetic field-assisted relishing. In this paper, an electromagnet or the i18 of test system was designed and manufactured. A size of magnetic abrasive is used on 25~75${\mu}{\textrm}{m}$ and for the polish a micro-channel upper part. A surface of channel which is not even is manufactured using magnetic abrasive finishing at upper surface of micro-channel. As a result, the surface roughness rose by 80％ after upper surface of micro- channel was polished up 8 minutes by polishing.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.10a
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• pp.318-323
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• 2003

In order to polish complicated shaped inner surfaces of molds, a new polishing method with consolation liquid was Invented The MAGIC (MAGnetic Intelligent Compound) Polishing is the best method, a countermeasure of polishing trouble that is reduce of productivity and instability of quality. But because MAGIC polishing is new polishing method there is no study of the standardization of polishing by MAGIC wheel yet. So we want to standadize MAGIC polishing condition. For the First time, we will evaluate the influence of composition ratio and kind of polishing grain in polishing surface roughness. In this study, we determined amount of dressing oil and dressing point as kind and composition ratio of polishing grain. we compared surface roughness case by case

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.10a
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• pp.329-333
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• 2003

In micro hole punching process the burr occurs inevitably, but the burr must be minimized in order to improve the quality and accuracy of the product. In this study, magnetic field assisted polishing technique is applied to remove the burr which exists in nozzles for ink-jet printer head and proved to be a feasible for deburring by experiment. The deburring characteristics of sheet metals was investigated changing with polishing time. After the deburring, the burr size has remarkably reduced and roundness of the hole also has improved.

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.