• 제목/요약/키워드: 엑사이머 레이저

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엑사이머 레이저 여기용 고반복 펄스압축 시스템 개발에 관한 연구 (Development of multi-repetitive Pulse Compression System for excimer laser excitation)

  • 전상영
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.36-38
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    • 1989
  • We have developed Magnetic Pulse Compression System to realize repetitive excimer laser excitation. The principle of this system is to use the large change in permiability owing to the nolinear characteristics of ferro-magnetic material (Metglas2605s-2 metal ribon). Prior to the laser operation, the MPC system was tested with a dummy load (5$\Omega$) and laser head. Laser head has a discharge volume of 1.0 (w) x 2.0 (h) x 20.0(1) cm. This MPC system compressed a 6.2us (FWHM), 80 A pulse into a 0.4us(FWHM), 1.3kA pulse.

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PSD를 이용한 광학적 자동 촛점장치 (Optical Autofocus System for Wafer Steppers using PSD as the Position Sensor)

  • 박기수
    • 한국광학회지
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    • 제4권2호
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    • pp.157-161
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    • 1993
  • PSD(Position Sensitive Detector)를 위치센서로 사용하여 광학적 자동촛점 장치를 구성하여 그 특성을 조사하였다. 본 연구는 광 리소그라피 장비인 KrF 엑사이머 레이저 스템퍼를 모델로 개발 하였다. 광원으로 780nm인 반도체 레이저를 사용하였으며, 시준기, 반사경, 렌즈 등을 사용한 광학계를 구성하여 위치신호(position error signal)를 측정 하였으며, 분해능은 $0.03{\mu}m$이었다.

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폴리머 미세가공을 위한 레이저 어블레이션 모델링 (Modeling of Polymer Ablation with Excimer Lasers)

  • 윤경구;방세윤
    • 한국정밀공학회지
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    • 제22권9호
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    • pp.60-68
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    • 2005
  • To investigate the effects of beam focusing in the etching of polymers with short pulse Excimer lasers, a polymer etching model of SSB's is combined with a beam focusing model. Through the numerical simulation, it was found that in the high laser fluence region, SSB model considering both photochemical and thermal contribution is considered to be suitable to predict the etched hole shape than a simple photochemical etching model. The average temperature distribution into the substance obtained by assuming 1-D heat transfer is found to be fairly similar to the fluence distribution on the ablated surface. The experimental etching data fur polymers are used to give material properties for ablation model. The fitted etch depth curve gives a nice agreement with the experimental data.

레이저를 이용한 마이크로렌즈 제조에 관한 연구 (Microlens fabricated by laser irradiation)

  • 윤경구;이성국;김재구;김철새;김재도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.748-751
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    • 2000
  • Microlens made by laser radiation method have advantages in the easiness of their fabrication. The process is based on the projection of a chromium-on-quartz reticle on to the Polymer using a pulsed 248nm KrF excimer laser. Fabrication process is a fluence-dependent rate and density. The lens shape is defined by a rotationally symmetric sluence distribution with smooth radial variation in the image plane of the reticle. A typical lens of 50㎛ diameter was fabricated by irradiating 2000 laser pulses within 40 seconds. The experimental results show microlens fabrication by UV laser is possible and well worth studying further.

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엑사이머 레이저를 이용한 웨이퍼 크리닝에 관한 고찰 (The Study on Wafer Cleaning Using Excimer Laser)

  • 윤경구;김재구;이성국;최두선;신보성;황경현;정재경
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 춘계학술대회 논문집
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    • pp.743-746
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    • 2000
  • The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

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방전여기 KrF 레이저의 완충가스 영향에 대한 이론 해석 (Theoretical Analysis of Buffer Gas Effects of a Discharge Excited KrF Laser)

  • 최부연;이주희
    • 한국광학회지
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    • 제1권1호
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    • pp.33-39
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    • 1990
  • 방전여기 방식의 KrF 엑사이머 레이저의 컴퓨터 시뮬레이션 프로그램을 개발하여 방전 중의 $KrF^*$ 형성, 탈여기 및 흡수반응 등에 대한 완충가스의 영향에 관해 해석하였다. He 가스와 Ne 가스의 경우 $KrF^*$ 생성효율은 각각 7.5%, 19%였으며, $KrF^*$ 탈여기는 충전전압 30kV에서 각각 45, 30%의 비율을 차지하였다. 그러나 흡수과정에서는 완충가스의 영향이 10% 이하였다.

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KrF 엑사이머 레이저 법을 이용한 다이아몬드 박막의 평탄화 (Planarization of Diamond Films Using KrF Excimer Laser Processing)

  • 이동구
    • 열처리공학회지
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    • 제13권5호
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    • pp.318-323
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    • 2000
  • The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

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UV레이저를 이용한 Cr 박막의 어블레이션 (The UV Laser Ablation of Cr film on Glass Substrate)

  • 윤경구;이성국;김재구;최두선;황경현;정재경;장원석;나석주
    • 한국정밀공학회지
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    • 제17권8호
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    • pp.134-139
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    • 2000
  • In order to understand the removal mechanism and seek the optimal conditions. KrF excimer laser ablation of Cr films on glass substrates is investigated. The surface morphology of the laser-irradiated spot is examined by SEM. The measured single-shot ablation rate is found to be about two times the result of numerical analysis based on a surface vaporization model and heat conduction theory. Surface morphology examination indicates that the Cr film is removed by the sequence of melting-surface vaporization-,melt expulsion by plasma recoil and that the outmost ripple of the diffraction pattern gives a strong effect on the morphology of molten Cr during the melting and vaporization processes. To seek the optimal process parameters for micro patterning morphological investigation is carried out experimentally on samples having different chromium film thicknesses. Optimal processing conditions are determined to enhance the accuracy and quality of thin film removal for micro patterning.

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