• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.291-297
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• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.5-14
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• 2023

In this study, LiDAR-reflective black hollow-structured silica/titania(B-HST) materials are successfully synthesized by employing the NaBH₄ reduction and etching method on silica/titania core/shell(STCS) materials, which also effectively enhance near-infrared(NIR) reflectance. Moreover, core-etched supernatant solutions are collected and recycled for the synthesis of extracted silica(e-SiO₂) process, which successfully applies as filler materials for semiconductor epoxy molding compound(EMC). In detail, B-HST materials, fabricated by the sequential experimental steps of sol-gel, reduction, and sonication-mediated etching method, manifest blackness(L^*) of 13.2 similar to black paint and excellent NIR reflectance(31.1%). Consequently, B-HST materials are successfully prepared as LiDAR-reflective black materials. Additionally, core-etched supernatant solution with silanol precursors are employed for synthesis of homogeneous silica filler materials via sol-gel method. As-synthesized silica fillers are incorporated with epoxy resin and carbon black for the preparation of semiconductor EMC. Experimentally synthesized EMC exhibits comparable mechanical-chemical properties to commercial EMC. Conclusively, this study successfully proposes designing procedure and practical experimental method for simultaneously synthesizing the NIR-reflective black materials for self-driving vehicles and EMC materials for semiconductors, which are materials suitable for the industrial 4.0 era, and presented their applicability in future industries.

• Resources Recycling
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• v.32 no.3
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• pp.9-17
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• 2023

Efforts are currently underway to develop a method for efficiently recovering lithium from the cathode material of waste lithium iron phosphate batteries (LFP). The successful application of lithium battery recycling can address the regional ubiquity and price volatility of lithium resources, while also mitigating the environmental impact associated with both waste battery material and lithium production processes. The isomorphic substitution leaching process was used to recover lithium from spent lithium iron phosphate batteries. Lithium was leached by the isomorphic substitution of Fe²⁺ in LFP using a relatively inexpensive ferric chloride etching solution as a leaching agent. In the study, the leaching rate of lithium was compared using the ferric chloride etching solution at various multiples of the LFP molar ratio: 0.7, 1.0, 1.3, and 1.6 times. The highest lithium leaching rate was shown at about 98% when using 1.3 times the LFP molar ratio. Subsequently, to eliminate Fe, the leachate was treated with NaOH. The Fe-free solution was then used to synthesize lithium carbonate, and the harvested powder was characterized and validated. The surface shape and crystal phase were analyzed using SEM and XRD analysis, and impurities and purity were confirmed using ICP analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.58-61
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• 1995

Instead of using CCl$_4$CCl$_2$F$_2$ gases, we used a alternative reaction gas of CFCs which we have developed, for the experiment of laser induced dry etching of laser induced dry etching of GaAs, and compared with the etch profile of a usual reation gas. Laser powers(power density) on the sample surface were varied from 100 mW(12.7 MW/$\textrm{cm}^2$) to 210mW(27 MW/$\textrm{cm}^2$) The laser beam was scanned over the sample by moving the cell with a speed raging from 8.3$\mu\textrm{m}$/sec and the gas pressure also was varied form 260 Torr to 760 Torr, High etching rates up to 136 $\mu\textrm{m}$/sec and an aspect ratio of 2.6 have been achieved by single scan of laser beam. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron spectroscopy(AES) Etch profiles, including depth and width were observed by scanning electron microscopy(SEM)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.257-257
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• 2010

디스플레이 산업의 발달로 화상 영상폰, 디지털 카메라, MP4, PMP, 네비게이션, LCD TV등의 가전 제품의 수요증가에 따라 이에 장착되는 LCD 패널의 생산력 향상과 원가 절감을 위한 검사 기술이 요구되고 있다. LCD 검사를 위한 Probe unit은 미세전기기계시스템(MEMS) 공정을 이용하여 제작된다. LCD 검사용 Probe unit는 LCD 가장자리 부분에 전기적 신호(영상신호, 등 기신호, 색상신호)가 인가되도록 하는 수 십 내지 수 백개의 접속 단자가 고밀도로 배치되는데, 이러한 LCD는 제품에 장착되기 전에 시험신호를 인가하여 화면의 불량여부를 검사하기 위한 점등용 부품으로 50 um 이하의 Pin간 거리를 유지하면서 정확한 Pin Alignment를 요구하는 초정밀 부품이다. 본 연구에서는 반도체용 Si wafer에 마스크 공정 및 slit etching 공정을 적용하여 목표인 30 um pitch의 Probe unit을 개발하기 위해 Deep Si Etching(DRIE) 장비를 이용하여 식각 공정에 따른 특성을 평가하였다. 마스크 공정은 500 um 두께의 양면 연마된 반도체용 Si wafer를 이용하였으며, thick PR을 사용하여 마스킹하여 식각공정을 수행하였다. Si 깊은 식각은 $SF_6$ 가스와 Passivation용으로 $C_4F_8$ 가스를 교대로 사용하여 수직방향으로 깊은 식각이 이루어지는 원리이다. SEM 측정 결과 30 um pitch의 공정 목표에 도달하였으며, 식각공정 결과 식각율 6.2 um/min, profile angle $89.1^{\circ}$로 측정되었다. 또한 상부 에칭공정과 이면 에칭공정에서 폭과 wall의 간격이 동일하였으며, 완전히 관통된 양면식각이 이루어졌음을 확인하였다. 또한 실제 사용되는 probe unit의 조립에 적합한 slit 공정을 위한 에칭특성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.274-274
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• 2009

고효율 결정질 실리콘 태양전지 구조를 갖기 위해서는 기본적으로 광포획 기능이 고려된 기판이 고려되어야 한다. 본 실험에서는 2-step 습식공정을 이용하여 기판의 반사율을 기존 대비 절반 이하로까지 줄일 수 있는 저반사율을 갖는 표면구조를 얻을 수 있었다. 일반적인 텍스처링 공정을 NaOH와 TMAH등을 이용하여 10um이하의 피라미드 구조를 통해 평균반사율을 10~13%수준을 얻었고, metal assist etching을 이용하여 추가적인 나노 텍스처링을 적용하였다. 전체적인 2-step에칭을 적용하여 평균 반사율을 5%이하까지 줄일 수 있었다. 이는 전반적으로 나노구조 형성으로 인하여 단파장쪽의 반사율이 적게 나오고 IR 파장쪽의 반사율도 같이 낮아짐으로써 저반사율이 달성되었다. 2-step을 이용한 나노 텍스처링 공정 최적화와 반사방지막을 증착하여 이에 대한 효과를 연구하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.316-316
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• 2012

본 연구에서는 Si wafer에 마스크 공정 및 Slit-etching 공정을 적용하여 25 um 피치의 probe unit을 개발하기 위해 Deep Si Etching 장비를 이용하여 식각공정 조건에 따른 특성을 평가하였다. 25 um pitch는 etch 폭의 크기에 따라 3종류로 설계하였으며, 식각공정은 2수준, 4인자 실험계획법에 의해 8회 실험을 수행하였다. 실험계획법에 의해 미니탭을 활용하여 최적조건을 구한 결과 12.5 um etch 폭에서는 가스유량은 200 sccm, 에칭시간 7 sec, 코일 파워 1500W, 에칭 압력은 43.7 mtorr의 조건이 etch 형태 및 profile angle이 목표치에 근접한 결과를 얻었다. 또한 probe pitch를 30~60 um까지 증가시켰을 경우 Etch depth는 증가하였으며, 식각율 또한 증가한 현상을 보였다. 재현성 실험을 위해 위의 최적조건을 이용하여 2회 반복하여 실험한 경우 모든 시편이 목표치에 도달하였다. 이는 미세피치화 되는 프로브 유닛의 기초데이터로 활용될 수 있다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.293-297
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• 2009

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

• 전자공학회논문지 IE
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• v.46 no.2
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• pp.18-21
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• 2009

The optical fiber refractive index sensors were fabricated using etching method and their refractive index characteristics have been investigated. Good sensitivity was shown at the region of 1.452-1.46 refractive index and operating point was shifted by wavelength. The sensitivity of sensor increased with decreasing cladding thickness and was stable with heat treatment. The hysteresis under cyclic refractive index changes was negligible.