• The Korean Journal of Food And Nutrition
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• v.10 no.1
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• pp.102-109
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• 1997

The structures of novel branched oligosaccharides synthesized by the acceptor reaction with dextransucrase from Leuconostoc mesenteriodes M-12 were proposed in accordance with the results obtained from enzymatic hydrolyses and a partial acid hydrolysis. The structure of branched oligosaccharide B4 was shown to be 62-O-$\alpha$-D-kojibiosylmaltose. Branched oligosaccharide B5 was shown to be 63-O-$\alpha$-D-kojibiosylpanose. By reacting the acceptor reaction products with endodextranase a novel branched oligosaccharide (D4) could be produced. D4 was derived from the result of endodextranase hydrolysis of oligosaccarides synthesized by the second acceptor reaction with dextransucrase and was resistant to endodextranase and glucoamylase. The proposed structure of D4 was 62-O-$\alpha$-D-kojibiosylisomaltose. Formation pattern of the acceptor reaction products smaller than d.p. 6 with linear or branched linkage was also shown.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.217-225
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• 2010

A Through-Bulkhead Initiation Module(TBIM) works as the shock-wave generated by the detonation of donor explosive transmits to acceptor explosive. In order to estimate the minimum thickness of the bulkhead of TBIM, the structural stress of TBIM housing is calculated via modeling analysis, and which shows a sufficient margin in strength as the minimum thickness is bigger than 0.1 mm. The free surface velocity at the metal to explosive interface is measured using VISAR to determine the optimal thickness of bulkhead. The shock pressure is calculated from the measured free surface velocity, and the probability of TBIM with respect to the thickness of bulkhead is estimated by comparing the sensitivity of acceptor explosive with it.

• Journal of the Korean Society of Propulsion Engineers
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• v.14 no.4
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• pp.16-24
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• 2010

A Through-Bulkhead Initiation Module(TBIM) works as the shock-wave generated by the detonation of donor explosive transmits to acceptor explosive. In order to estimate the minimum thickness of the bulkhead of TBIM, the structural stress of TBIM housing is calculated via modeling analysis, and which shows a sufficient margin in strength as the minimum thickness is bigger than 0.1 mm. The free surface velocity at the metal to explosive interface is measured using VISAR to determine the optimal thickness of bulkhead. The shock pressure is calculated from the measured free surface velocity, and the probability of TBIM with respect to the thickness of bulkhead is estimated by comparing the sensitivity of acceptor explosive with it.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.36-41
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• 1995

Dielectric properties were investigated at Mn doped $(Pb_{1-x}Ca_{x})ZrO_{3}$ with x=0.38 in microwavefrequencies. Both the density and Q values of sintered ceramics increased with increasing calciningtemperature. In the sample sintered at $1300^{\circ}C$ for 2 hrs, the deped Mn ions completely solubled in $(Pb,Ca)ZrO_{3}$ phase until 0.5wt% and the grain size was independent of doping amount. It was observed thathigh dielectric constant of 90 - 100 and high quality factor of 1300 at 4 GHz for O.l5wt% Mn doped$(Pb_{0.62}Ca_{0.38})ZrO_{3}$. The Mn" and Mn" worked as acceptors in $(Pb,Ca)ZrO_{3}$ which created the oxygen vacancies and affected the increment of the Q values. However, the excess Mn doping more than 0.5wt% resulted in decreasing Q values.decreasing Q values.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.