• Electronics and Telecommunications Trends
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• v.31 no.6
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• pp.13-20
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• 2016

실리콘 포토닉스 기술은 컴퓨터를 비롯한 여러 전자, 통신 기기들이 광 정보를 송수신하는 데 표준 실리콘을 이용하는 기술로, 기존 실리콘 반도체 기술과 호환될 수 있는 기술이다. 전자와 광의 융합기술로 실리콘 칩 사이, 또는 칩 내에서 빛으로 데이터를 주고받아, 데이터 전송속도를 획기적으로 올리면서도 전력 소모량을 크게 줄일 수 있는 것이 가능하다. 고성능, 저 생산비용과 낮은 소비전력 등의 장점 때문에, 전 세계적으로 실리콘 포토닉스 핵심기술/실용적 플랫폼 연구개발 및 상용화 경쟁이 이루어지고 있다. 본지에서는 실리콘 포토닉스 기술의 간략한 개요, 현재 동향 및 기술 이슈, 그리고 ETRI에서 연구개발된 실리콘 포토닉스 기술과 더불어 그 발전 전망에 대해 기술한다.

• Electronics and Telecommunications Trends
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• v.20 no.5 s.95
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• pp.84-92
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• 2005

실리콘 포토닉스 기술은 차세대 실리콘 기술로서 optoelectronic integrated circuit을 위한 실리콘 기반 광기술에 대한 것이다. 본 고에서는 이러한 실리콘 포토닉스 기술을 이용한 단일 집적화에 있어서 응용과 문제점 및 연구개발 동향에 대해 알아본다. 특히, 세부 기술들에 대한 현재의 기술적 수준을 단일 집적화 측면에서 검토하였으며, 가장 큰 문제점으로 인식되는 실리콘 발광원의 국내외 기술 현황을 살펴보았다.

• Electronics and Telecommunications Trends
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• v.37 no.3
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• pp.11-22
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• 2022

The development and application of silicon photonics technology to terabit optical transmission are expected in the future. Silicon photonics technology is recognized as the only technology focusing on increasing the bandwidth of data center switches. High-density integration-based small optical subassemblies, optical engines, and optical transceivers are converged with the silicon photonics technology to accelerate a revolution in optical interfaces.

• Photonics industry news
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• s.33
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• pp.50-57
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• 2006

• Photonics industry news
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• s.15
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• pp.40-45
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• 2003

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.577-581
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• 2011

Silicon nanoparticles have attracted a great deal of scientific interests due to its intense photoluminescence in the visible spectral region and its potential applications in biological fluorescence maker, RGB (red, green, blue) display, photonics and photovoltaics etc. Practical applications making use of optical and physicochemical properties of Si nanoparticles requires an efficient synthetic method which allows easy modulation of their size, size distribution as well as surface functionalities etc. In this study, a one-pot solution reduction scheme is attempted to prepare alkyl-terminated Si nanoparticles (<10 nm) with Si precursors, (Octyl)$SiCl_3$ or mixture of (Octyl)$SiCl_3$ and $SiCl_4$, containing alkyl-groups using Na(naphthalide) as reducing agent. The surface capping of Si nanoparticles with octyl-groups as well as Si nanoparticle formation was achieved in one-pot reaction. The hexane soluble Si nanoparticles with octyl-termination were in the range of 2-10 nm by TEM and some oxide groups (Si-O-Si) was present on the surface by EDS/FTIR analyses. The optical properties of Si nanoparticles measured by UV-vis and PL evidenced that photoluminescent Si nanoparticles with alkyl-termination was successfully synthesized by solution reduction of alkyl-containing Si precursors in one-pot reaction.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.3
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• pp.311-317
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• 2019

We first numerically analyzed the characteristics of a silicon-based grating structure for beam steering. The analysis includes the basic principle of the grating structure according to the wavelength, peak radiation angle, radiation efficiency, and full-width at the half maximum(FWHM) of the radiation angle. Based on the analysis, we propose a silicon-based grating structure integrated with distributed Bragg reflector(DBR) to obtain a high radiation efficiency and narrow beam width simultaneously. We performed the numerical optimization of the radiation efficiency and FWHM of the radiation angle according to the DBR position. By the design optimization using the proposed grating structure compatible with the complementary metal-oxide semiconductor(CMOS) process, we achieved a maximum radiation efficiency of 87.1% and minimum FWHM of radiation angle of $4.68^{\circ}$.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.153-160
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• 2010

We optimized the Si(substrate)/$SiO_2$(cladding)/$Si_3N_4$(antiresonant cladding)/$SiO_2$(core)/air multi-layers rib-optical waveguides of antiresonant reflecting optical waveguide (ARROW) for integrated optical biosensor structure utilizing beam propagation method (BPM). Thickness of anti-resonant cladding was derived to minimize the propagation loss and leaky field mode deeply related with evanescent mode was theoretically derived. Depth, width, refractive index and cladding thickness of anti-resonant cladding were numerically calculated into 2.3${\mu}m$, 5${\mu}m$, 1.488, and 0.11${\mu}m$ respectively to minimize propagation loss using the BPM simulation tool. Finally one- and two-dimensional propagation characteristics of ARROW was confirmed.

• Korean Journal of Optics and Photonics
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• v.30 no.1
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• pp.15-22
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• 2019

$Si_3N_4$ rib-optical waveguides for evanescent-wave integrated-optical biosensors were analytically interpreted, to derive the single-mode propagation conditions. The integrated-optical biosensor structure based on two-mode interference was proposed, and the rib width and thickness and core thickness for a single-mode and two-mode waveguide (sensing region) were proposed to be $3{\mu}m$, 2 nm, and 150 nm and $3{\mu}m$, 20 nm, and 340 nm respectively. The optical characteristics of each guided-wave mode were investigated utilizing the film mode-matching (FMM) analysis.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.213-217
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• 2020

In this study we report a wet-etching-based fabrication method for adiabatic optical-fiber tapers (OFTs), and describe their adiabaticity and HE₁₁ mode evolution at a wavelength of 1550 nm. The profile of the fabricated system satisfies the adiabaticity properties well, and the far-field pattern from the etched OFT shows that the fundamental HE₁₁ mode is maintained without a higher-order mode coupling throughout the tapers. In addition, the measured far-field pattern agrees well with the simulated result. The proposed adiabatic OFTs can be applied to a number of photonic applications, especially fiber-chip packages. Based on the fabricated adiabatic OFT structures, the optical transmission to the inversely tapered silicon waveguide shows large spatial-dimensional tolerances for 1 dB excess loss of ~60 ㎛ (silicon waveguide angle of 1°) and insertion loss of less than 0.4 dB (silicon waveguide angle of 4°), from the numerical simulation. The proposed adiabatic coupler shows the ultrabroadband coupling efficiency over the O- and C-bands.