• Title/Summary/Keyword: 실리콘 옥사이드

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Vertical Growth of Amorphous SiOx Nano-Pillars by Pt Catalyst Films (Pt 촉매 박막을 이용한 비정질 SiOx 나노기둥의 수직성장)

  • Lee, Jee-Eon;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.1
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    • pp.699-704
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    • 2018
  • One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

Growth of Amorphous SiOx Nanowires by Thermal Chemical Vapor Deposition Method (열화학 기상 증착법에 의한 비정질 SiOx 나노와이어의 성장)

  • Kim, Ki-Chul
    • Journal of Convergence for Information Technology
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    • v.7 no.5
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    • pp.123-128
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    • 2017
  • Nanostructured materials have received attention due to their unique electronic, optical, optoelectrical, and magnetic properties as a results of their large surface-to-volume ratio and quantum confinement effects. Thermal chemical vapor deposition process has attracted much attention due to the synthesis capability of various structured nanomaterials during the growth of nanostructures. In this study, silicon oxide nanowires were grown on Si\$SiO_2$(300 nm)\Pt(5~40 nm) substrates by two-zone thermal chemical vapor deposition with the source material $TiO_2$ powder via vapor-liquid-solid process. The morphology and crystallographic properties of the grown silicon oxide nanowires were characterized by field-emission scanning electron microscope and transmission electron microscope. As results of analysis, the morphology, diameter and length, of the grown silicon oxide nanowires are depend on the thickness of the catalyst films. The grown silicon oxide nanowires exhibit amorphous phase.

Characterization of Hydrogel Tinted Contact Lens Containing 4-iodoaniline using Titanium Silicon Oxide Nanoparticles as Additive (티타늄 실리콘 옥사이드 나노입자를 첨가제로 사용한 4-iodoaniline을 포함한 하이드로젤 착색 콘택트렌즈의 특성)

  • Cho, Seon-Ahr;Sung, A-Young
    • Journal of Korean Ophthalmic Optics Society
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    • v.19 no.3
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    • pp.315-322
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    • 2014
  • Purpose: The physical and optical characteristics of hydrophilic tinted contact lens containing titanium silicon oxide nanoparticles and the basic hydrogel contact lens material containing 4-iodoaniline were examined. In this study, the utility of titanium silicon oxide nanoparticles as a UV-blocking material for ophthalmologic devices were investigated by measuring the UV transmittance of the produced polymer. Also, titanium silicon oxide nanoparticles only without the addition of 4-iodoaniline in primary contact lens materials by copolymerizing two groups were compared. Methods: For manufacturing hydrogel lens, HEMA, MA, MMA, 4-iodoaniline and a cross-linker EGDMA were copolymerized in the presence of AIBN as an initiator. Also, the titanium silicon oxide nanoparticles was used as additive. After polymerization the physical properties such as water content, refractive index, contact angle and spectral transmittance of produced contact lenses were measured. Results: Measurement of the physical properties of the copolymerized material showed that the water content, refractive index, UV-B transmittance and contact angle were in the range of 35.01~38.60%, 1.4350~1.4418, $34.15{\sim}57.25^{\circ}$ and 1.0~10.0%, respectively. Titanium silicon oxide nanoparticles is not used as an additive in the experimental group, the results of the measurement showed that the water content, refractive index, contan angle and UV-B transmittance of the hydrogel lens polymer was 34.00~36.80%, 1.4378~1.4420, $40.15{\sim}60.16^{\circ}$ and 1.8~25.0%, respectively. Conclusions: Also, the transmittance for UV light was reduced significantly in combinations containing titanium oxide nanoparticles.

Electrical Properties of poly Si layers embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited alumina layers as blocking oxide (원자층 증착법으로 형성된 $Al_{2}O_{3}$ 층을 이용한 MOS 구조에서 폴리 실리콘 층의 전기적 특성에 관한 연구)

  • Park, Byoung-Jun;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1353-1354
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    • 2007
  • 폴리 실리콘 층의 유무에 따른 금속-옥사이드-반도체(MOS) 구조의 소자를 제작하였다. 터널링 산화막과 블로킹 산화막으로는 $Al_{2}O_{3}$ 층을 증착하였으며, 원자층 증착법을 이용하여 제작하였다. 터널링 산화막 층의 두께에 따른 I-V와 C-V 특성을 측정하였다. 전자들이 폴리 실리콘 층에 저장됨에 따라 N-형의 I-V 특성이 관찰되었다. C-V 측정 시에는 반시계 방향의 히스테리시스 특성을 나타내었으며, 전압이 증가할수록 플랫-밴드 전압 이동 폭이 더욱 증가하였다. 이러한 전기적 특성은 전압의 이동에 따른 전자들이 터널링 산화막 층을 통하여 폴리 실리콘 내부에 저장되기 때문이다. 이를 특성들은 폴리 실리콘의 전하 저장 가능성을 보여주는 것이며, 터널링 산화막 층의 두께에 따른 전기적 특성 변화도 관찰하였다.

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Solution growth of polycrystalline silicon on Al-Si coated borosilicate and quartz glass substrates for low cost solar cell application (저가태양전지에 응용을 위한 용액성장법에 의한 Al-Si층이 코팅된 유리기판상의 다결정 실리콘 박막성장에 관한 연구)

  • Lee, S.H.;Queisser, H.J.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.3
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    • pp.238-244
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    • 1994
  • We investigated solution growth of silicon on borosilicate and quartz glass substrates in the temperature range of $800^{\circ}C~520^{\circ}C$. A thin Al-Si layer evaporated onto the substrate serves to improve the wetting between the substrate and the Al/Ga solvent. Nucleation takes place by a reaction of Al with $SiO_2$ from the substrate. We obtained silicon deposits with a grain size up to a few 100 $\mu\textrm{m}$. There was a perferential (111) orientation for the case of quartz glass substrates while there is a strong contribution of other orientations for the deposition of Si on borosilicate glass substrates.

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Heparin Release from Polyethyleneoxide-Polydimethylsiloxane Devices (폴리에틸렌 옥사이드-실리콘 Segment Device 에서 헤파린 용출)

  • 김성호
    • YAKHAK HOEJI
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    • v.30 no.6
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    • pp.306-310
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    • 1986
  • The release of heparin from monolithic devices composed of different ratios of polyethylene oxide(PEO MW 20,000) and polydimethylsiloxane was investigated. Water soluble PEO plended into the polydimethylsiloxane proved a controlled release of heparin. The release rate of heparin could be controlled by varying the content of PEO and loading dose of heparin. The release rate of heparin from the devices increased as the content of PEO and heparin in the devices increased. The release rate of heparin from devices were related to nature of solute(ionic strength) and temperature. The release mechanism may be associated with the creation of pore or domine through the devices the water-uptake and the change in the physical structure of the polydimethysiloxane network.

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