• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.1 s.232
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• pp.14-21
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• 2005

Laser chemical vapor deposition can be an effective technique for a rapid prototyping with ceramic materials, in particular. The objective of the study is to fabricate several 3-dimensional objects by stacking multi-layers as well as to find out some basic aspects of a rapid prototyping with laser chemical vapor deposition such as deposition characteristics with traversing speed of the laser, possible problems in stacking multi-layers etc. The limit speed of the laser that can grow a tilted SiC rod was found in this study, and laser directing writing that occurs over the limit speed was also investigated. Finally, a zigzag-shaped rod, a spiral-shaped rod, a wall and a square duct were successfully fabricated with laser chemical vapor deposition of tetramethylsilane

• Composites Research
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• v.25 no.6
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• pp.172-177
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• 2012

For the manufacture of low resistance Si-SiC composite, the properties of reaction sintering in the green body of various mixed ${\alpha}$-SiC powder size with the various carbon contents from 0wt% to 20wt% were investigated. The samples preparation was green body by CIP method under this condition, molten silicon infiltration process was conducted to reaction bonded silicon carbide. the results of sintered density, 3-point bending strength and resistance of analysis showed that varied carbon and silicon melt reacted to convert to fine ${\beta}$-SiC particle and the structure was changed to dense material. The amount of fine ${\beta}$-SiC particle was gradually increased as carbon content increase. According to mixed composite, it's mechanical and specific resistivity properties was strongly influenced by carbon content within 10wt% more then carbon content 10wt% was strongly influenced by phase transition.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.74-83
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• 2022

The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.309-313
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• 2013

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. Especially, high purity SiC is applicable to the fields of power semiconductor and lighting emitting diode (LED). In this work, high purity carbon powders as raw material for high purity SiC were prepared by a RF induction thermal plasma. Dodecane ($C_{12}H_{26}$) as hydrocarbon liquid precursor has been utilized for synthesis of high purity carbon powders. It is found that the filtercollected carbon powders showed smaller particle size (10~20 nm) and low crystallinity compared to the reactor-collected carbon powders. The purities of reactor-collected and filter-collected carbon powders were 99.9997 % (5N7) and 99.9993 % (5N3), respectively. In addition, the impurities of carbon powders synthesized by RF induction thermal plasma were mainly originated from the surrounding environment.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.113-113
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• 2018

환경 친화형 전기자동차, 하이브리드 자동차, 전철 등에서는 고내압 및 소형으로 전력손실을 감소시킬 수 있는 파워 디바이스가 필수이다. 최근, 실리콘 카바이드(SiC, silcon carbide)는 기존 실리콘(Si)보다 스위칭 손실의 저감 및 고온환경에서의 동작 특성이 우수하여, 차세대 저 손실 전력반도체 재료로서 기대를 받고 있다. 용액 성장 법에서 고품질 SiC 결정을 만들 수 있다. 그러나 늦은 성장 속도 때문에 SiC의 양산을 어렵게 하고 있다. 현재까지 성장 속도 향상을 위한 Si용매에 Cr을 첨가하여 탄소 용해도를 높이는 방법이 사용되고 안정된 성장을 위한 Si-Cr용매에 Al를 첨가하는 등 다양한 금속을 첨가하는 방법이 이용되고 있다. 선행 연구에서는 다양한 용매인 탄소 용해도를 실측하고 특히 큰 탄소 용해도를 보인 것은 Co이었다. 본 연구에서는 $Si_{0.6}Cr_{0.4}$원료와 Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매에 의한 SiC용액 성장을 실시하고 결정 성장 속도 및 표면 상태의 변화를 검토했다. on-axis 4H-SiC(000-1)을 사용한 Top-seeded solution growth(TSSG)법과 원자 비율로 $Si_{0.6}Cr_{0.4}$와 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 용매를 이용하여 SiC 용액 성장을 실시했다. Ar가스에서 저항 가열로 내를 치환 후에 $1800^{\circ}C$까지 가열하고 종자화 후에 120분간 유지하고 결정 성장을 실시했다. 냉각 후에 성장의 표면에 남은 용매를 $HF+HNO_3$에서 제거했다. 광학 현미경을 이용하여 결정면과 두께를 관찰 측정했다. Co를 첨가한 $Si_{0.56}Cr_{0.4}Co_{0.04}$의 경우는 $Si_{0.6}Cr_{0.4}$의 경우보다 결정 성장 속도가 향상됐다. 또한 $Si_{0.6}Cr_{0.4}$보다 step-flow의 성장을 나타낸 결정의 표면이 전반적으로 관찰됐으며 안정된 결정성장을 나타냈다. 본 연구에서 실시한 연구 방법과 결과는 고품질 및 고속의 SiC 용액성장을 위한 매우 유용한 자료로 활용 될 수 있을 것으로 판단한다.

• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.260-268
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• 2000

응고 및 마모거동을 연구하기 위하여 Cr, V, Mo 및 W의 조성이 다른 3종류의 백주철을 주조하였다. 고주파유도용해로에서 장입시켜 1873K까지 승온시켜 장입원료들을 모두 용해시킨 후 1823K에서 Y블럭주형에 주입하였다. 얻어진 3종류의 백주철조성은 다음과 같다: Fe-3%C-10%Cr-5%Mo-5%W(합금1), Fe-3%C-10%V-5%Mo-5%W(합금2) 및 Fe-3%C-17%Cr-3%V(합금 3)응고과정을 추적하기 위하여 각 시편으로부터 50g을 채취한 후 알루미나도가니에 넣고 실리콘카바이드로를 사용하여 1723K의 알콘분위기하에서 재용해를 시켰다. 용금을 10K/분의 속도로 냉각시키면서 열분석을 행하였으며 도중 몇 차례 소입 실험을 병행하였다.합금1의 경우 초정오스테나이트, (오스테나이트+$M_7C_3$)공정, (오스테나이트+$M_6C$)공정, 합금2의 경우 초정 MC, 초정오스테나이트, (오스테나이트+MC)공정 , (오스테나이트+$M_2C$)공정, 합금3의 경우 초정 $M7C_3$와 (오스테나이트+$M_7C_3$)공정으로 구성되어 있었다. 주방상태, 균질화열처러상태, 공냉상태, 템퍼링상태에서 내마모시험을 행하였다. 먼저 주방상태시 편을 진공분위기하에서 1223K에서 5시간동안 균질화열처리를 행한후 로냉을 시켰다. 다시 이 시편을 1323K에서 2시간 유지후 강제공냉을 시켰으며 강제공냉된 시편을 573K에서 3시간동안 템퍼링처리를 하였다. 내마모시험은 120 mesh마모지에 10N의 하중을 가하여 실시하였다. 각 사이클마다 무게감소를 측정하였으며 8번 반복실험을 하였다. 마모량은 균질화열처리시편, 주방상태시편, 템퍼링시편, 공냉시편의 순으로 감소하였다. 합금2가 마모량이 가장 적었으며 합금3이 가장 많았다. 합금2의 마모량이 가장 적은 이유는 조직이 초정 MC, 공정 MC 및 공정 M2C로 구성되어 있기 때문으로 사료된다.주방상태에서 기지조직은 퍼얼라이트이었으나 열처리를 통하여 마르텐사이트, 템퍼드마르텐사이트, 잔류오스테나이트로 변태하였다. 이상의 결과를 종합해 보면 MC가 내마모성에 가장 기여하는 조직으로 판단되어진다.

• Journal of Digital Contents Society
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• v.14 no.1
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• pp.35-40
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• 2013

The use of slurry with a mix of abrasives and coolant for making Wire Saw in the photovoltaic industry has sharply increased with the semiconductor wafer. In this paper, the slurry was isolated, purified and dried by microwave drying method with high-purity silicon carbide powder obtained through chemical processing. Dried slurry bulk was first pulverized and chemical treatment was applied to produce powder. The produced slurry powder was then analyzed by going through the following analysis; thermal analysis, particle size analyses: SEM shots, elemental analysis, XRF and XRD. The results of this study found the recovery rate of the power obtained though the chemical processing to be higher than the one obtained from mineral processing. The results anticipate infrastructure building and active responses to increasingly stronger domestic and international environmental regulations through the integration and recycling of large amounts of slurry in the photovoltaic industry.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.5
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• pp.2628-2634
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• 2014

Vehicle washer heater system is more widely adopted to defrost a window or to clear the windshield glass in winter season. The washer heater system should be designed to heat up washer fluid rapidly to the target temperature for only a short time. A numerical analysis has been carried out to analyze the heat transfer characteristics with materials of inside parts in vehicle washer heater system with filler and flow path. ANSYS - FLUENT software is employed for the analysis. The axial symmetry model is three-dimensional and unsteady. It applies to the coupled method which is one of pressure based. Through this result, it was obtained to find the optimal material condition for the filler and flow path in washer system. For material of filler, the air with lower density was heated more rapidly rather than silicon carbide(SiC). For material of flow path, copper with the heat transfer coefficient of approximately four times greater than the nickel gives us higher efficiency. That is the reason why the heating time of methanol was reduced to make uniform temperature in washer heater system.

• Journal of Powder Materials
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• v.16 no.6
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• pp.416-423
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• 2009

Diamond/SiC composites are appropriate candidate materials for heat conduction as well as high temperature abrasive materials because they do not form liquid phase at high temperature. Diamond/SiC composite consists of diamond particles embedded in a SiC binding matrix. SiC is a hard material with strong covalent bonds having similar structure and thermal expansion with diamond. Interfacial reaction plays an important role in diamond/SiC composites. Diamond/SiC composites were fabricated by high temperature and high pressure (HPHT) sintering with different diamond content, single diamond particle size and bi-modal diamond particle size, and also the effects of composition of diamond and silicon on microstructure, mechanical properties and thermal properties of diamond/SiC composite were investigated. The critical factors influencing the dynamics of reaction between diamond and silicon, such as graphitization process and phase composition, were characterized. Key factor to enhance mechanical and thermal properties of diamond/SiC composites is to keep strong interfacial bonding at diamond/SiC composites and homogeneous dispersion of diamond particles in SiC matrix.