• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1559-1560
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• 2015

신축성 및 웨어러블 전자소자 응용을 위하여 엘라스토머 기판 상에 박막 트랜지스터를 제작하여 그 전기적 특성을 확인하였다. 제작된 트랜지스터의 신축성 향상을 위하여 엘라스토머 기판 상에 일반적인 포토리소그래피 공정과 습식식각 공정을 이용하여 국부적 단단한 폴리이미드 영역을 형성하여 사용하였다. 트랜지스터 특성 확인 결과 약 30 % 이상의 신축에서도 정상적인 트랜지스터 동작이 가능함을 확인하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.4
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• pp.10-16
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• 2021

This paper proposes a model that considers the parity-time symmetric structure as a state detection circuit for sensor applications using a stretchable inductor. In particular, to obtain a more practical computer simulation result, the stretchable inductor model was applied to this study model by referring to previously reported experimental results. The resistance component and phase component were controlled through the negative differential resistance circuit used in this study. In addition, the imbalance of the circuit caused by a change in the characteristics of the stretchable inductor could be compensated for using a negative differential resistance circuit. In particular, an analysis of the frequency characteristics of the sensor driving circuit of the parity-time symmetric structure proposed in this study confirmed that the Q-factor could be increased up to 20 times compared to the conventional resonant circuit.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.17-22
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• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.721-726
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• 2017

We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field- effect mobility of $5cm^2V^{-1}s^{-1}$ and a current on/off ratio of $10^5$ at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.646-646
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• 2013

그래핀은 이차원의 탄소 원자들이 벌집구조를 이루는 탄소 원자 한 층의 물질이다. 우수한 기계적, 전기적, 광학적 특성으로 인해 투명전극, 가스 센서, 트랜지스터 등과 같이 다양한 응용이 가능하고 연구가 행해지고 있다. 최근 몇 년 동안, 그래핀의 우수한 특성을 이용해서 마이크로센서나 신축성 있는 전자소자를 위한 전도막과 같은 응용이 시도되고 있다. 본 연구에서는 화학기상증착법 (CVD)으로 합성한 그래핀을 이용해서 암모니아 가스 센서 소자를 제작, 센서 특성을 관찰하였다. 구리 기판을 이용하여 화학기상증착법으로 그래핀을 합성하였으며 진공로에서 수소(H2)와 메탄(CH4) 가스를 사용하였다. 그래핀 합성 온도, 가스 유량 등을 변화시키며 그래핀을 합성하고, 합성된 그래핀을 구리기판을 식각용액을 이용해 제거하는 방법으로 그래핀을 전사시키는 공정거쳐 Au/Ni 전극패턴 위에 전사시킴으로 가스 센서 소자를 제작하였다. 제작된 센서 소자를 이용해 상온에서 암모니아(NH3) 가스의 유량을 변화시키며 실험하였다. 암모니아 가스가 흐를 때 그래핀에 암모니아 분자가 흡착되어 그래핀의 전기저항을 증가시켜 이를 이용해서 암모니아 가스를 감지할 수 있었다. 본 연구에서 제작한 소자는 상온에서 암모니아 가스에 민감하게 반응했으며 이는 기존의 금속산화물을 이용한 암모니아 센서는 대부분 고온에서 작동하는 점과 비교 하였을 때 가스 센서 소자로써 큰 장점이라고 할 수 있다.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.386-390
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• 2023

Stiffness-engineered stretchable substrate technology has been widely used to produce stretchable displays, transistors, and integrated circuits because it is compatible with various flexible electronics technologies. However, the stiffness-engineering technology has never been applied to transistor-based stretchable strain sensors. In this study, we developed thin-film transistor-based strain sensors on stiffness-engineered stretchable substrates. We designed and fabricated strain-sensitive stretchable resistors capable of inducing changes in drain currents of transistors when subjected to stretching forces. The resistors and source electrodes of the transistors were connected in series to integrate the developed stretchable resistors with thin-film transistors on stretchable substrates by printing the resistors after fabricating transistors. The thin-film transistor-based stretchable strain sensors demonstrate feasibility as strain sensors operating under strains of 0%-5%. This strain range can be extended with further investigations. The proposed stiffness-engineering approach will expand the potential for the advancement and manufacturing of innovative stretchable strain sensors.