• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.55-63
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• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.20-23
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• 2002

The local coercivity distribution of CoCrPt alloy films prepared by dc magnetron sputtering has been investigated by means of a magneto-optical microscope magnetometer (MOMM) capable of simultaneously measuring the local properties on 400 nm spatial resolutions. Serial samples of CoCrPt alloy films were prepared with the Pt composition of a range from 6 to 28 at. %. We find that the local coercivity distribution crosses over from Gaussian to non-Gaussian distribution in CoCrPt alloy films with increasing Pt composition, with increasing trends in the width of the distribution as well as the average local coercivity. Transmission electron microscopy (TEM) studies reveal that our findings are closely correlated with the dependences of the grain size distribution and its average size on Pt concentration.

• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.12
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• pp.1063-1069
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• 2012

In present paper, we used magnesium alloy having a lower density and higher electrical conductivity for bipolar plate to reduce the weight of PEM fuel cell. The silver was coated to prevent corrosion and form passivation film on the metal surface with sputtering. In acid proof evaluation for setting optimal coating conditions, the homogeneity of coating thickness was improved by coating with the thickness of 3 ${\mu}m$ which not indicated any micro cracks and the temperature $180^{\circ}C$. The performance test and evaluation based on the clamping pressure and channel depth to determine the configuration of bipolar plate for assembling single cell was implemented. And then we assembled single cell with this bipolar plate and implemented the performance test to ensure and compare the current-voltage performance followed as several factors such as coating or non-coating, the change of clamping pressure, the change of channel depth, etc. As these results, the maximum power density of single cell with the coated bipolar plate was 192 $mW/cm^2$ and it was confirmed that the power density per unit mass was better than existing metal bipolar plate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.183-183
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• 2009

OLED소자의 양극재료로써 현재는 산화인듐주석(ITO : indium tin oxide) 박막이 널리 이용되고 있다. 그러나 낮은 전기 비저항과 높은 투과도를 갖는 ITO 박막을 얻기 위해서는 $300^{\circ}C$ 이상의 고온에서 성막되어야 하며, 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링 시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 유기발광소자의 투명전극으로 쓰일 경우에 유기물과의 계면 부적합성, 액정디스플레이의 투명전극으로 사용될 경우에 $400^{\circ}C$정도의 놓은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 이러한 문제점을 지닌 ITO 박막을 대체할 수 있는 물질로 산화 인듐아연(lZO) 박막이 많은 각광을 받고 있다. IZO(Indium Zinc Oxide) 박막은 저온 ($100^{\circ}C$ 이상)에서 증착이 가능하고 추가적인 열처리 없이도 가시광 영역에서 90% 이상의 광 투과도와 ${\sim}10^{-4}{\Omega}cm$ 이하의 낳은 전기 비저항을 갖는 것으로 알려져 있다. 이러한 IZO박막은 성막 후 고온의 열처리 과정이 필요 없기 때문에 폴리카보네이트와 같은 유기물 기판을 사용하여 제작 가능한 유연한 평판형 표시 소자의 제작에도 적용될 수 있다. IZO(Indium Zinc Oxide) 박막은 상온 공정에서도 우수한 전기적, 광학적, 표면 특성을 나타낼 뿐만 아니라 양극재료로써 높은 일함수를 가지고 있어 고효율의 유기 발광 소자를 구현하는데 유리한 재료라 판단된다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기가 OLED 소자의 성능에 미치는 영향을 조사하였다. R.F Magnetron Sputtering을 이용하여 투명 전도막을 성막 형성 하였으며, 기판온도와 증착과정에서 주입되는 산소, 수소의 유랑 변화가 박막의 구조적, 전기적 특성에 어떠한 영향 미치는 것인가를 자세히 규명하였다 ITO 와 IZO박막은 챔버 내 다양한 가스 분위기(Ar, $Ar+O_2$ and $Ar+H_2$) 에서 R.F Magnetron Sputtering 방법으로 증착했다. TCO박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석했다. 광학적 투과도와 박막의 두께는 Ultraviolet Spectrophotometer(Varian, cary-500)와 Surface profile mersurement system으로 각각 측정하였다. 면저항, charge carrier농도, 그리고 TCO박막의 이동성과 길은 전기적특성은 Four-point probe와 Hall Effect Measurement(HMS-3000)로 각각 측정한다. TCO 박막의 표면 거칠기에 따른 OLED소자의 성능분석 측면에서는 TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 에칭 하였다. 미세사이즈 패턴 마스크가 사용되고 에칭의 깊이는 에칭시간에 따라 조절한다. TCO박막의 표면 형태는 FESEM과 AFM으로 관찰하고 그리고 나서 유기메탈과 음극 전극을 연속적으로 TCO 박막위에 증착한다. 투명전극으로 사용되는 IZO기판 상용화를 위해 IZO기판 위에 $\alpha$-NPB, Alq3, LiF, Al순서로 OLED소자를 제작하였다. 전류밀도와 전압 그리고 발광과 OLED소자의 전압과 같은 전기적 특성은 Spectrometer (minolta CS-1000A) 에 의하여 I-V-L분석을 했다.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.136-143
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• 2000

$SrBi_2Ta_2O_9;(SBT)$ films were deposited on p-type Si(100) at room temperature by rf magnetron sputtering method to confirm the possibility of application of $Pt/SBT/Pt/Ti/SiO_2/Si$ structure (MFM) for destructive read out ferroelectric RAM (random access memory). Their structural characteristics with the various annealing times and Ar/$O_2$ gas flow ratios in sputtering were observed by XRD (X-ray diffractometer) and the surface morphologies were observed by FE-SEM (field emission scanning electron microscopy), and their electrical properties were observed by P-V (polarization-voltage measurement) and I-V (current-voltage measurement). The Ar/$O_2$ gas flow ratios of sputtering gas were changed from 1 : 4 to 4 : 1 and SBT thin films were deposited at room temperature. The films show (105), (110) peaks of SBT by XRD measurement. SBT thin films deposited at room temperature were crystallized by furnace annealing at 80$0^{\circ}C$ in oxygen atmosphere during either one hour or two hours. Among their electrical properties, P-V curves showed shaped hysteresis curves, but the SBT thin films showed the asymmetric ferroelectric properties in P-V curves. When Ar/$O_2$ gas flow ratios are 1 : 1, 2: 1, the leakage current density values of SBT thin films are good, those values of 3 V, 5 V, and 7 V are respectively $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$.After two hours of annealing time, their electrical properties and crystallization are improved.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.