• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.160-161
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• 2001

APD(avalanche photo diode)는 수광된 빛에 의해 생성된 캐리어를 강한 역바이어스 전압(40 ～ 400V)으로 가속시켜 avalanche 증배를 일으켜 큰 current를 얻을 수 있도록 제작된 소자이다. APD는 P-N 포토 다이오드에 비하여 수십～수백배의 높은 반응도(responsivity)를 얻을 수 있으며 응답 시간이 매우 짧다는 장점이 있는 반면 불규칙한 전류에 의해 만들어지는 내부 잡음 레벨이 높으며 온도에 민감하다는 단점을 갖고 있다. (중략)

• Journal of the Korea Society of Computer and Information
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• v.15 no.10
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• pp.59-70
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• 2010

Each pixels become got pixel value for color of only one from among colors because of bayer pattern that light receiving device of image sensor which is used in HHP and digital camera writes only one color. Information of the missing pixels could infer perfect color image from using information of neighbor pixels by using CFA(Color Filter Array). In this paper, we derive relation between the average of the data from the light receiving device of image sensor and each color channel data. And by using this relation, a new efficient edge color fuzzy method for color interpolation is proposed. Also, missing luminance signal channel interpolation was fuzzy interpolation along any edges direction for reducing color noise and interpolating efficiently it. And in this paper, the proposed method has been proved improving average 2.4dB than the conventional method by using PSNR. Also, resolution of the image of the proposed method was similar to the original image by visual images, we has been verified to be decreased a chromatic aberration than image of conventional algorithms with simulation result.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.115-120
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• 2005

As a popularity of a portable digital device such as a cellular phone, a digital camera and a MP3 player is spreading, the demand of the mobile storage device increases rapidly. A bluray technology using 405nm laser diode and objective lens having high NA(Numerical Aperture), 0.85, satisfies a miniaturization and a high capacity which are the requirements of the portable device. To develop SFFOP(small form factor optical pickup), it is prerequisite to minimize the number of optical components and establish evaluation and assembly method of micro optical pickup system as well as mass production method of micro optical component. To minimize optical elements of optical pickup, there have been many researches to use P-HOE(Polarized Holographic Optical Element) due to its extremely small size and versatile function. However, P-HOE is handled and assembled very accurately in SFFOP. In this paper, static error signal detection method is developed for an alignment of P-HOE in SFFOP. Using developed static error signal detection method, P-HOE can be aligned very accurately with real time result of static error signals of pickup such as FES(focusing error signal) and TES(Tracking Error Signal). The developed static error signal detection method is verified by the evaluation of commercialized DVD Pickup. And finally. developed static error signal detection method is applied for the assembly of P-HOE in SFFOP system satisfies specification of BD(Blu-ray Disk).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.145-153
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• 2009

The purpose of this research is to propose a system to detect a strip defect on a iron plate using an image processing, one way of finding defects on an iron plate. An existing way of image processing is using a light source which release a light energy in a certain frequency and a light absorbing display which responds to the light source. This research attempts to detect defects by using a image processing and multi-Tread which handles an illumination, without depending on characteristics of light frequency. One of the advantages of this method is that it makes up for the weakness of the existing method which was too difficult for users to notice a defect. Also this method makes it possible to realize a real-time monitoring on a plate of iron. The other advantage of this method is that it reduces the price of hardwares on demand to match the frequency of light emitting display and light absorbing display because this method only needs a hardware which is easy to buy in any market.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.726-728
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• 2013

Optoelectronic arc discharge sensor was used to detect arc discharge inside power distribution panel. Arc discharge is fatal to power system once it begins, thus preventive detection is necessary before power failure occurs. Optoelectronic detection method was used to avoid direct electrical contact to power apparatus inside power distribution panel. 180 degree detection angle and detection range far exceeding 6m, which was sufficient for monitoring purpose, was achieved using the photodiode having $7.5mm^2$ of active surface area and flash source with $0.4cal/cm^2$ energy density, which is equivalent to 1.9J with $2.16cm^2$ emitting area. The response speed of arc discharge sensor was measured to be below 1 msec. The above optoelectronic arc discharge sensor was measured to be sensitive enough to detect 0.94 pC charge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.883-888
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• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.183-186
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• 2001

평판 디스플레이의 기술이 급격히 발전함에 따라 그 응용 분야가 다양해지고 평판 모니터용 LCD도 대형화추세를 보이고 있다. LCD는 광변조기능을 가지는 수광소자로서 발광원인 백라이트(backlight)를 필요로 하는데 백라이팅 기술은 냉음극방전램프(CCFL: Cold Cathode Fluorescence Lamp)를 광원으로 사용하며 사용되는 냉음극 방전램프 또한 모니터의 추세에 따라 길어지고 얇아지고 있다. 본 논문에서는 20인치의 대형 LCD 모니터의 백라이팅 즉 램프구동을 위한 안정적이면서 대출력을 가지는 인버터를 설계하였다. 일반적으로 CCFL은 같은 제조공정을 거치더라도 점등, 주파수, 전압, 전류 등 여러 가지 특성이 동일하지 않은 단점을 가지고 있는데 이는 초기 점등조건이나 점등후에 동일한 휘도를 가지는데 어려움을 준다. 본 연구에 사용된 20인치 LCD 모니터는 내부에 상하 각각 3개씩 6개의 램프를 내장하고 있으며, 제작된 인버터는 입출력 휘도대비 90%의 효율을 얻었으며, 램프간의 출력전류차가 2%로 미소하고, 최대 8개의 램프구동도 가능하다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.370-371
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• 2007

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by. RF sputtering system. Substrate temperature and work pressure is $100^{\circ}C$ and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. For sample deposited at $300^{\circ}C$, we observed full width at half maximum (FWHM) of 0.240 and good surface morphology.