• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.171-174
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• 2004

The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.71-73
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• 2005

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.22-26
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• 2014

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were prepared by conventional oxide-mixed method and the effect of sintering temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,400^{\circ}C$ sintering temperature which show the optimal electrical properties, $k_p{\sim}0.412$, $d_{33}{\sim}316pC/N$, $Q_m{\sim}144$, ${\varepsilon}_r{\sim}3,345$ and $T_c{\sim}85^{\circ}C$. These results show that the sintering temperature plays an important role in piezoelectric properties.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.608-612
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect and low sintering temperature, PLZT(8/65/35) ceramics was fabricated using conventional solid-state method with the variation of sintering temperature ($1,050^{\circ}C$, $1,100^{\circ}C$, $1,200^{\circ}C$). The XRD pattern of all specimens indicated general perovskite structure with secondary phase. From the results of temperature dependence of dielectric constant, the $T_C$ (ferroelectric-paraelectric phase transition temperature) was shifted toward high temperature with increasing sintering temperature. When the specimen was sintered at $1,100^{\circ}C$, the optimal value of ${\Delta}T{\sim}0.349^{\circ}C$ in ambient temperature of $215^{\circ}C$ was appeared. It is considered that PLZT(8/65/35) ceramics possess the possibility of refrigeration device application.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.428-433
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• 2000

The consolidation behavior of multicomponent particles prepared by the flame hydrolysis deposition process is examined to identify the effects of Si substrate temperature. To fabricate multi-component particles, a vapor-phase ternary mixture of $SiCl_4(100 cc/min),\;BCl_3(30cc/min)\;and\;POCl_3,(5cc/min)$ was fed into a coflow diffusion oxy-hydrogen flame burner. The doped silica soot bodies were deposited on silicon substrates under various deposition conditions. The surface temperature of the substrate was measured by an infrared thermometer. Changes in the chemical states of the doped silica soot bodies were examined by FT-IR(Fourier-transformed infrared spectroscopy). The deposited particles on the substrate were heated at $1300^{\circ}C$ for 3h in a furnace at a heating rate of 10K/min. Si-O-B bending peak has been found when surface temperature exceeds $720^{\circ}C$. Correspondingly, the case with substrate temperatures above loot produced good consolidation result.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.338.1-338.1
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• 2014

비정질 산화물 반도체(Amorphous Oxide Smeiconcuctor)를 이용하여 투명 박막 트랜지스터의 채널층으로 많은 연구가 진행되고 있다. 투명 박막 트랜지스터의 채널층으로 사용되고 있는 IGZO박막은 비정질임에도 불구하고 높은 이동도와 넓은 밴드갭을 갖고 있는 것으로 알려져 있다. 본 연구는 RF magnetron sputtering법으로 유리기판 위에 IGZO박막을 증착시켰으며 소결된 타겟으로는 In:Ga:ZnO를 각각 1:1:2mol%의 조성비로 혼합하여 이용하였으며, $30{\times}30mm$의 XG Glass 유리기판에 sputtering 방식으로 증착하였다. 박막 증착 조건은 초기압력 $3.0{\times}10^{-6}Torr$, 증착 압력 20mTorr, 반응가스 Ar 25sccm, 공정 변수로는 RF Power 25W, 50W, 75W, 100W 각각 변화를 주어 실험을 진행 하였으며, 증착온도는 실온으로 고정 하였다. 분석 결과로 RF Power 25W 일 때 XRD 분석결과 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인하였으며, AFM 분석결과 0.5 mm 이하의 Roughness를 가졌다. UV-Visible-NIR 측정 결과 가시광선 영역에서 87%이상의 투과도를 나타냈으며, Hall 측정 결과 Carrier concentration $3.31{\times}10^{19}$, Mobility $10.9cm^2/V.s$, Resistivity $1.8{\times}10^{-2}$, 투명 박막 트랜지스터의 채널층으로 사용 가능함을 확인 할 수 있었다.

• 한국재료학회지
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• 제7권9호
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• pp.758-762
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• 1997

52mol% Fe$_{2}$O$_{3}$, 26mol% MnO의 조성에서 calcium과 vanadium의 동시첨가에 의한 투자율의 변화원인을 살펴보았다. 초투자율은 첨가물의 농도가 커짐에 따라 감사하였으나 소결체의 밀도나 입자크기는 증가하였으므로 초투자율의 변화는 미세구조의 변화로는 설명되지 않았다. 전기비저항은 첨가물의 농도가 증가함에 따라 증가하였으며 이는 입계의 고저항층의 생성과 vanadium ion에 의한 Fe$^{2+}$이온의 산화로 설명되었다. 첨가물의 농도가 증가함에 따라, 초투자율의 제 2차 최대치가 나타나지 않는 것과 초투자율이 감소하는 것으로부터, 결정자기이방성 상수의 값은 음으로 커짐을 알 수 있었다. 투자육의 온도의존성과 비저항의 변화로부터, 첨가물의 농도에 따른 상온 초투자율의 감소는 Fe$^{2+}$ 이온 농도의 감소에 따른 결정자기이방성 상수의 증가에 의한 효과와 입계에 유리질이 생겨 자벽이 쉽게 이동하지 못하는 효과 때문인 것으로 판단되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.422-425
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• 2001

The electrical properties of ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3-La_2O_3$ based varistors were investigated with sintering temperature in the range of $1240\sim1300^{\circ}C$. The varistors sintered at $1240\sim1260^{\circ}C$ exhibited high density, which was 5.50- $5.70g/cm^3$ corresponding to 95.2~98.6% of theoretical density. The varistor voltage was decreased in range of 718.47~108.00 V/mm with increasing sintering temperarture. The varistors sintered at $1240\sim1260^{\circ}C$ exhibited good electrical properties, in which the nonlinear exponent is in the range of 79.25~49.22 and leakage current is in the range of 0.26~$1.00 {\mu}A$ In particular, the varistor sintered at $1240^{\circ}C$ showed very excellent electrical properties, in which the nonlinear exponent is 79.25 and leakage current is $0.26{\mu}A$

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.539-543
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• 2001

ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.538-542
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• 2005

The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional miked oxide method and the sintering temperature was $1425\~1500^{\circ}C$. The hexagonal phase of $Mg_4Ta_2O_9$ and the cubic phase of $SrTiO_3$ were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596 GHz and $-3.14\;ppm/^{\circ}C$, respectively.