• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.195-201
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• 1997

The present paper describes the effect of dry mixed grinding on kaolinite-aluminum trihydroxide mixture with a planetary ball mill before sintering and its influence on mullite formation during sintering. The size reduction of the mixture is market in the early stage of grinding and the obtained fine particles agglomerate subsequently with an increase of grinding time. The crystal structure of the mixture is collapsed easily into an amorphous one by planetary ball milling, of which amount increases with an increase of grinding time. Only mullite phase except for anatase as an inherent impurity in kaolinite appeared in the sintered body of the mixtures with mixed grinding as relatively lower temperature 1523K, while corundum, cristobalite, and Al-Si spinel phases, besides mullite were formed in the sintered body of the mixture without mixed grinding. Therefore, the mixed grinding treatment is very effective to improve the homogeneous mixing and disp-ersion of the mixture of raw materials on a micro scale and to decrease the thermal decomposition tem-perature by crystal structure change of them so as to obatin direct preparation of mullite with high purity at relatively low temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.36-41
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• 2002

Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.635-638
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• 2004

페로브스카이트 구조를 가지는 $CaZrO_3$ 유전체 세라믹스에 $CaTiO_3$를 부피 비율로 첨가하여 첨가량 변동에 따른 마이크로파 유전 특성을 조사하였다. 또한 저온 동시소성 기능성 LTCC 기판용 유전체 소재로서 활용하기 위하여 저융점의 borosilicate계 유리 프리트를 첨가하여 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스의 저온 소결 거동과 마이크로파 유전 특성을 평가하였다. 알칼리가 첨가된 저융점의 borosilicate계 유리 프리트를 $10\sim30$ wt% 범위로 첨가함으로서 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스의 소결온도를 $1450^{\circ}C$에서 $900^{\circ}C$이하로 낮출 수 있었으며, 유리 프리트의 첨가량으로 공진 주파수 온도계수 특성을 조절할 수 있었다. 유리 프리트의 첨가량이 15 wt% 첨가시 $875^{\circ}C$에서 충분한 소결이 이루어졌으며, 이 경우 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스는 유전율(k) 23, 품질계수(Qxf) 2500, 공진 주파수 온도계수 ($\tau_{cf}$) -3 ppm/$^{\circ}C$의 매우 양호한 마이크로파 유전 특성을 나타내었다. 유리 프리트의 첨가에 의하여 소결 과정에서 주상인 $CaZrO_3$가 $CaZr_4O_9$ 상으로의 변화가 뚜렷이 나타났는데, 이러한 상전이 현상과 함께 미세구조의 변화에 대해서도 고찰하였다.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.19-25
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• 2002

Glass composed of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ for the fabrication of green sheet was prepared by melting process, and glass ceramics was prepared by the process of nucleation and grystal growth for the glass of $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$ system with Lithium fluorhectorite and Lithium boron fluorphlogopite crystal phase. Powderization of the glass ceramics was carried out by water swelling. The average particle size at this point was 2.574 $\mu\textrm{m}$. Slurry was prepared for green sheet using high viscous sol fabricated by water swelling, which shows cleavage phenomenon in prepared glass ceramics. The optimum ratio of powder to water for the tape casting was 18:100, and its viscosity was 11,000~14,000 cps.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.43-49
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• 1999

In the paper, Significant sintering phenomena at refractory temperature ranges, from $1400^{\circ}C$ to $1700^{\circ}C$, of the pure spinel ($MgAl_{2}O_{4}$) and the experimental data from other researchers are analysed and compared in terms of density ($\rho$), grain growth exponent(n), and activation energy (Q). Similar to the density rewsults, the grain growth results above $1600^{\circ}C$ appear similar for the spinel, but for temperatures lower than about $1600^{\circ}C$ results are distinctly differently grouped. However, the grain growth exponents are different, six for the spinel (below $1600^{\circ}C$), and five at high temperatures(above $1600^{\circ}C$), with the activation energy of 474$\pm$38 kJ/mol below $1600^{\circ}C$, which is very close to the published values, 360~580 kJ/mol.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.201-210
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• 1991

본 논문에서는 (B $i_{1-x}$ P $b_{x}$)$_{2}$S $r_{2}$C $a_{2}$C $u_{3.6}$ $O_{y}$ (x=0~0.5)로 조성된 분말의 최적 하소온도를 결정하고 시편의 최적 소결온도를 규명하기 위하여 열분석을 하였다. 또 단일상의 고온 초전도체를 제작하기 위하여 열처리 온도, 시간 및 Pb 함량 변화에 따라 제작된 시편의 미세구조, 조성, 전기저항 및 전류밀도를 측정하여 상호 연관성을 종합적으로 분석, 검토하여 상변이에 관한 원인을 규명하고자 하였다. 또한 실용화 전 단계로서 임계특성 해석을 위하여 성형조건을 변화시켜 시편을 제작, 전류밀도값을 측정하였다.였다.다.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.439-444
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• 1994

The influence of the direction of applied compressive stress on degradation mechanism ofpoled PZT sample was studied. When compressive stress perpendicular to poling direction was appliedon poled PZT sample, the degradation phenomena was explained by the diffusion of space chargepolarization. On the contrary, compressive stress parallel to poling direction was applied, it wasexplained by the rearrangement of 90" domains. As the grain size increased, the degradation phenomenawas promoted. It is attributed to different internal stress due to difference of grain size. of grain size.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.721-725
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• 1998

In this study solid-phase sintered silicon caribide samples composed of SiC powder having boron and car-bon black as additives were prepared by pressureless sintering at $1950^{\circ}C$. The bending strength the frac-ture toughness and the specific werar rate of the samples were examined and the micro structures of the broken and the worn surface were observed by SEM to understand the relationship between the tri-bological charcteristics and the micro structure. Additionally the relationship between the micro struc-tures and the tribological characteristics of the samples for the frictional opponents SiC and $Al_{2}O_{3}$ pins were investigated Conclusions are as follows ; 1. The specific were rate of the samples for the SiC pin was larger than that for the $Al_{2}O_{3}$ pin. HOwever the specific wear rate for the $Al_{2}O_{3}$ pin was increased about 6,45 times as that for the SiC pin under the load increasing. 2. The specific wear rate of the SiC pin was larger than that of the $Al_{2}O_{3}$ pin. owever the specific wear rate of the $Al_{2}O_{3}$ pin was increased about 4 times as that of the SiC pin under the load increasing 3. The micro stucture of the worn surface showed a flat face without cracks in the case that the frictional opponents has the low friction coefficient but in the case of without cracks in the case that the frictional opponents has the low friction coefficient but in the case of the high friction coefficient the micro structure of the worn surface showed an uneven face having spread-ed cracks. 4. The tribological characteristics of thesolid-phase sintered SiC samples was similar to that of li-quid-phase sintered ones when the pin having the high friction coefficient was used.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.50-57
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• 1993

Abstract The sintering behavior of the mechanically alloyed AI-8wt%Fe power during vacuum hot pressing was investigated and high temperature deformation behavior of the sintered specimen was studied through compression tests at various strain rates in the temperature range between 35$0^{\circ}C$ and 45$0^{\circ}C$. In 'addition, thermal stablity of the sintered specimem was examined by hardness measurement after annealing the spcimem for 60 hours in the temperature range of 30$0^{\circ}C$ ~50$0^{\circ}C$. The compressive stress increased rapidly with strain and reached the maximum point at the strain about 3%. With slight decrement after reaching the maximum point, the flow stress became constant up to the strain of 30% and it was considered to be due to equilibrium between work hardening and dynamic recrystallization. The hardness of the 60 hrs annealed specimens began to decrease rapidly at 40$0^{\circ}C$ .