• Title/Summary/Keyword: 세정수

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A Study on Recycling Technology of EC for Semiconductor and LCD PR Stripping Process (반도체/LCD PR 제거용 EC의 재이용 기술에 관한 연구)

  • Moon, Se-Ho;Chai, Sang-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.10
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    • pp.25-30
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    • 2009
  • We have developed recycling technology of ethylen carbonate to use in photoresist stripping and cleaning process, which will be core processing technology for high performance and low price semiconductor and LCD fabrication. Using this technology, it is possible for semiconductor wafer and LCD planer to process more rapid and chip, and productivity will be improved.

Study on Coagulant Application for Calcium Ammonium Nitrate Extraction of Denitrification Scrubber Waste Cleaning Solution (탈질 스크러버 폐 세정액에 포함된 질안석회 추출을 위한 응집제 적용 연구)

  • Lee, Hyun Suk;Song, Woon Ho
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.2
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    • pp.289-295
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    • 2017
  • The International Maritime Organization (IMO) in accordance with the regulations with respect to the combustion gases, such as NOx, SOx generated by the marine engine. The combustion gases must be equipped with a device to reduce emissions from all ships passing through the Baltic SECAs. In Korea, the International Maritime Organization (IMO) and the development of a device for NOx, SOx reduction. Scrubber is used in the ammonia water and the Urea solution in the waste water. The waste water containing ammonium nitrate and ammonium sulfate, react of the NOx and SOx gas. In this study, the recovery of by-product, which contains the waste water was used as an organic solvent extraction method of salting out. Ammonium nitrate and ammonium sulfate, the recovery process. A qualitative analysis of the collected by-product FT-IR analysis. Through the elemental analysis and SEM-EDS, characteristic evaluation was performed with an impurity.

The Effect of Spray Flow Rate, Aspect Ratio, and Filling Rate of Wet Scrubber on Smoke Reduction (습식 스크러버의 분무유량, 형상비 및 충진율 변화가 스모크 저감에 미치는 영향)

  • Son, Kwun;Lee, Ju-Yeol;Park, Kweon-Ha
    • Journal of Advanced Marine Engineering and Technology
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    • v.39 no.3
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    • pp.217-222
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    • 2015
  • There has been increased amount of atmospheric pollutants including NOx and SOx which cause acid rain and photochemical smog as a result of increased use of fossil fuels. In order to reduce the amount of pollutants produced by fossil fuel, wet scrubber system is introduced in this experiment. Wet scrubber system is applied to a diesel engine (3,298 cc) and the amount of smoke is measured before and after the application in terms of aspect ratio, filling rate, and flow rate. The result showed a lot of smoke reduction when wet scrubber system was applied, and also the aspect ratios and water spray flow rate were the important factors to improve smoke reduction.

Cat-CVD법을 이용하여 다양한 제막압력 조건에서 증착된 PTFE(polytetrafluoroethylene) 박막의 소수성 평가에 관한 연구

  • Alghusun, Mohammad;Yeo, Seung-Jun;An, Jeong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.281-281
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    • 2012
  • 연꽃잎 효과(Lotus effect)라 불리는 자가 세정 효과(self cleaning effect)는 연꽃이 항상 깨끗한 상태를 유지하는 것이 관찰되면서 꾸준히 관심에 대상이 되어 왔었다. 자가 세정 효과는 접촉각 $150^{\circ}$ 이상의 초소수성 표면에서 구현이 가능하며 이런 표면을 일상생활부터 산업분야까지 응용하고자 하는 많은 노력들이 있었다. 물질의 친수성 또는 소수성은 표면의 거칠기(roughness)와 표면에너지(surface energy)의 두 가지 특성에 의해 결정된다. 하지만 낮은 표면에너지 물질을 사용해도 접촉각 $150^{\circ}$ 이상의 초소수성 표면을 얻긴 힘들며, 표면의 거칠기를 증가시켜야 한다. PTFE (polytetrafluoroethylene)는 낮은 표면에너지를 가진 소수성 물질로 bulk일 경우 접촉각이 약 $108^{\circ}$이지만 거친 표면을 가진 박막으로 만들 경우 접촉각이 $150^{\circ}$ 이상의 값을 가지는 초수수성 표면이 가능한 물질이다. 특히, 초소수성 표면 이외에 우수한 내열성 및 내화학성 특성을 가지고 있어 디스플레이 및 태양전지 등의 자가세정(self cleaning) 보호막으로써 응용이 기대되고 있다. 본 연구에서는 HFPO (hexafluoropropylene)를 원료 가스로 이용하여, Si(100)과 유리 기판위에 Cat-CVD (Catalytic Chemical Vapor Deposition)법으로 PTFE 박막을 증착하였다. 텅스텐(W)을 촉매로 사용하였으며, 촉매온도가 $850^{\circ}C$이상인 조건에서 접촉각이 $150^{\circ}$ 이상인 초소수성 PTFE 표면을 쉽게 얻을 수 있었다. 특히 본 연구에서는 제막압력을 300 mTorr에서 700 mTorr까지 변화시켜 가며 유리와 Si 기판위에 증착하였다. Cat-CVD 제막압력을 변화시켜가며 증착된 PTFE 박막의 접촉각을 측정한 결과, 제막압력이 300 mTorr일 때 glass와 Si 기판위에 증착된 PTFE박막 표면에서의 접촉각은 각각 133, $117^{\circ}$였지만, 제막압력이 400 mTorr이상일 땐 $150^{\circ}$ 이상의 높은 접촉각을 갖는 초소수성 표면을 얻을 수 있었다.

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Antimicrobial Activity and Skin Safety of Ethanol-Based Dry Shampoo (에탄올베이스 드라이샴푸의 항균력과 피부안전성)

  • Ryu, Chul;Jeong, Noh-Hee
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.1
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    • pp.14-22
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    • 2014
  • Ethanol-based dry shampoo may provide an important and valuable resource in convenience for patients and busy people due to the unnecessity of water to wash out. In this research, ethanol-based dry shampoo was prepared by simple mixing of specific detergent materials and different contents of ethanol. Cytotoxicity was examined by the MTT assay to determine less-irritative materials of detergent and shampoo. Patch test on skin was performed to figure out the degree of skin irritation and also antimicrobial effect was examined by the eradication of bacteria. As a result, it was confirmed that ethanol-based dry shampoo had non-cytotoxicity as well as an antibiotic effect. Therefore, ethanol-based dry shampoo will be able to provide esthetic and hygienic hair treatment purposes with cleanliness and convenience.

A Study on the Removal of Cu and Fe Impurities on Si Substrate (Si 기판에서 구리와 철 금속불순물의 제거에 대한 연구)

  • Choi, Baik-Il;Jeon, Hyeong-Tag
    • Korean Journal of Materials Research
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    • v.8 no.9
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    • pp.837-842
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    • 1998
  • As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

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Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide (초임계 이산화탄소를 이용한 미세전자기계시스템의 식각, 세정, 건조 연속 공정)

  • Min, Seon Ki;Han, Gap Su;You, Seong-sik
    • Korean Chemical Engineering Research
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    • v.53 no.5
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    • pp.557-564
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    • 2015
  • The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-$CO_2$ (supercritical-$CO_2$) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-$CO_2$. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-$CO_2$ without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, $25^{\circ}C$) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, $5^{\circ}C$, we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-$CO_2$ (7.5 Mpa, $40^{\circ}C$), we had as good results as those of the case using gas-$CO_2$. Besides the processing time was shortened compared with that of the case of using gas-$CO_2$.