• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.251-258
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• 1996

The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.

• Journal of the Korean Ceramic Society
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• v.19 no.1
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• pp.24-34
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• 1982

The effect of the several variables on wetting of AISIB1113 steel by molten glass was studied by Sessible-drop method. Experimental variables were temperature, firing atmospheres, Fe2O3 addition to the sealing glass and steel surface conditions. The degree of wetting in terms of contact angles between molten glass and metal tested at different test conditions was analyzed by using Young's equation. The results showed that contact angles in H2 atmosphere in the glass metal systems were high but in N2 atmosphere, were small for studied glass metal systems. Especially, when the glass drop was in contact with oxidized steel in N2 atmosphere, The best adherence with contact angle of approximately 9°was obtained. In the case of Fe2O3 addition in glass contact angles subtantially increased due to the increase of surface tension of glass. Wetting phenomena were also discussed under the basis of these experimental results.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.7
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• pp.1664-1673
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• 1994

As a fundamental study on effects of thermal-cycles on residual stress of ceramics/metal joints, residual stresses in $Si_3N_4$/SUS304 joint specimens were measured before and single thermal-cycle by X-ray diffraction method and finite element method(FEM). The residual stress was found to increase after single thermal-cycle, which was agreeable with the results of residual stress measurement by X-ray diffraction method and residual stress analysis by finite element method. After the residual stress measurement, 4-point bending tests were performed. The relationship between the bending strength, the thermal-cycle temperature and hold time was examined. The bending strength was found to decrease with the increase of residual stress in linear relation.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.366-370
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• 2005

Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.312-316
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• 2014

The joining behavior of forsterite ceramics to SUS304 alloy using $8PbO-78Bi_2O_3-8B_2O_3-4ZnO-2SiO_2$ (wt%) system glass frit was investigated. The contact angle was smaller than $90^{\circ}$ at a temperature of $460^{\circ}C$. Redox reaction at the interface between forsterite and SUS304 was found to appear when the electrons in the metal part moved toward the glass part and the oxygen ions in glass moved to the metal side. The decrease of the surface tension due to the PbO solubility on the forsterite side contributed to the better wetting behavior at low temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.127-134
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• 1996

The thermal residual stresses were estimated for brazed Si3N4/S.S.316 joints with Cu/Mo multi-interlayers using FEM, and their bending strengths at room temperature were measured for various interlayer configura-tions. The Cu, Mo multi-interlayer decreased the maximum residual stress in Si3N4 and caused the residual stress redistribution rsulting in the high residual stress at Mo interlayer. The stress distribution in the joints as well as the maximum residual stress in silicon nitride were found to be main factors for determining bending strengths and Weibull modulous of the joints. The bending strength of the brazed Si3N4/S.S.316 joints with specific Cu, Mo multi-interlayer system were found to be above 400 MPa.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.535-542
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• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.863-870
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• 1999

SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.601-607
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• 1995

The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.70-78
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• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.