• 한국해양학회지
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• v.21 no.1
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• pp.25-33
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• 1986

Ontogenetic food habits of the four most abundant fish species in seagrass neadows of Redfish Bay, Texas, were examined quantitatively during 1982-1983. The darter goby (Gobionellus bolelsoma) and pinfish (Lagodon rhomboides) were trophic generalists, which used a wide range of food items. The darter goby had relatively diverse, omnivorous diet which included amphipods, copepods, polychaetes, filamentous algae, diatoms, and detritus. This species did not show distinct ontogenetic changes in foodpreferences. Unlike the darter goby, the pinfish showed ontogenetic progression of four feeding stages. An initial feeding stage was a planktivorous stage in which copepods were int major food items, followed by a carnivorous stage in which amphipods became the major food items, an omnivorous stage in which filamentous algae, diatoms, amphipods, and polychaetes were the major food items, and finally a herbivorous stage in which seagrass pieces with attached epiphytes and their debris were the major food items. The code goby (Gobiosoma robustrm) and Gulf pipefish (Syngathus scovelli) appeared to be relatively specialized in food havits as carnivorous. Similar ontogenetic changes in food habits were observed for these two species, i.e.initially, copepods were the major food items, followed by a gradual transition to amphipods with growth.

• Journal of KIISE
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• v.42 no.12
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• pp.1551-1560
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• 2015

Software Reliability Growth Models (SRGMs) are used to quantitatively evaluate software reliability and to determine the software release date or additional testing efforts using software failure data. Because a single SRGM is not universally applicable to all kinds of software, the selection of an optimal SRGM suitable to a specific case has been an important issue. The existing methods for SRGM selection assess the goodness-of-fit of the SRGM in terms of the collected failure data but do not consider the accuracy of future failure predictions. In this paper, we propose a method for selecting SRGMs using the trend of failure data and failure prediction ability. To justify our approach, we identify problems associated with the existing SRGM selection methods through experiments and show that our method for selecting SRGMs is superior to the existing methods with respect to the accuracy of future failure prediction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.182-185
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• 2002

자기정렬구조의 실리콘-게르마늄 이종접합 트랜지스터에서 $f_{max}$를 높이기 위한 방안으로 베이스의 저항 값을 감소시키고자 외부 베이스에 실리콘 및 실리콘-게르마늄 박막을 저온에서 선택적으로 성장할 수 있는 방법을 연구하였다. RPCVD를 이용하여 $SiH_{2}Cl_{2}$과 $GeH_{4}$를 소스 가스로 하고 HCI을 첨가하여 선택성을 향상시킴으로써 $675\sim725^{\circ}C$의 저온에서도 실리콘 및 실리콘-게르마늄의 선택적 에피성장이 가능하였다. 고온 공정에 주로 이용되는 $SiH_{2}Cl_{2}$를 이용한 실리콘 증착은 $675^{\circ}C$에서 열분해가 잘 이루어지지 않고 HCl의 첨가에 의한 식각반응이 동시에 진행되어 실리콘 기판에서도 증착이 진행되지 않으나 $700^{\circ}C$ 이상에서는 HCI을 첨가한 경우에 한해서 선택성이 유지되면서 실리콘의 성장이 이루어졌다, 반면 실리콘-게르마늄막은 실리콘에 비해 열분해 온도가 낮고 GeO를 형성하여 잠입시간을 지연하는 효과가 있는 게르마늄의 특성으로 인해 선택성이나 증착속도 모두에서 유리하였으나 실리사이드 공정시에 표면으로 게르마늄이 석출되는 현상 등의 저항성분이 크게 작용하여 실리콘-게르마늄막 만으로는 외부 베이스에의 적용은 적절하지 않았다. 그러나 실리콘막을 실리콘-게르마늄막 위에 Cap 층으로 증착하거나 실리콘막 만으로 외부 베이스에 선택적으로 증착하여 베이스의 저항을 70% 가량 감소시킬 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.182-187
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• 2015

The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.1
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• pp.34-40
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• 1985

An investigation has been made on the growth phenomena of epitaxial layer and polysilicon from SiH2 Cl2 in H2 and the etch phenomena of them from HCI in H2, at the system pressures of 1.0 atm (atmospheric process) and 0.1 attn (reduced pressure process). From the experimental equations for the growth rates and etch rates. the relevant process conditions for the selective epitaxy are predicted for the case of using mixtures of SiH2Cl2 and HCI in H2. As a result, it is found that selective epitaxial growth region exists in the concentration range investigated for the reduced pressure process but it does not for the atmospheric Process. This is due to the differences in the growth rates and etch rates at atmospheric and reduced pressure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.20-25
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• 2020

As nanoscience and nanotechnology advance, techniques for selective pattern growth have attracted significant attention. Silica nanoparticles (NPs) are used as a promising nanomaterials for bio-labeling, bio-imaging, and bio-sensing. In this study, silica NPs were synthesized by a sol-gel process using a modified Stöber method. In addition, the selective pattern growth of silica NPs was achieved by the surface functionalization of the substrate using a micro-contact printing technique of a hydrophobic treatment. The particle size of the as-synthesized silica NPs and morphology of selective pattern growth of silica NPs were characterized by FE-SEM. The contact angle by surface functionalization of the substrate was investigated using a contact angle analyzer. As a result, silica NPs were not observed on the hydrophobic surface of the OTS solution treatment, which was coated by spin coating. In contrast, the silica NPs were well coated on the hydrophilic surface after the KOH solution treatment. FE-SEM confirmed the selective pattern growth of silica NPs on a hydrophilic surface, which was functionalized using the micro-contact printing technique. If the characteristics of the selective pattern growth of silica NPs can be applied to dye-doped silica NPs, they will find applications in the bio imaging, and bio sensing fields.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.170-170
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• 2006

• 주택과사람들
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• s.210
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• pp.12-13
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• 2007

한국건설경영협회 주최로 10월18일 오후 2시, 서울 중구 태평로 프레스센터 19층 회의실에서 한국건설경영협회 창립 15주년을 기념해 '성장 동력 확보를 위한 한국 건설 산업의 선택' 토론회가 개최됐다. 이번 토론회에서는 한국 건설 산업의 지속적인 발전과 1등 산업 성장방안을 모색하기 위해 '경영 패러다임', '초일류 건설 기업', '글로벌 건설 제도' 등 3개 분야의 주제 발표와 토론이 이어졌다.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.29 no.2
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• pp.37-42
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• 2006

기술집약적인 경제성장의 중요성이 강조되고 있는 가운데 이공계 진학과 과학기술직종선택의 감소는 성장잠재력에 가장 근본적인 위협이 된다. 이를 유지하려는 여러 가지 정책이 교육학적이나 사회학적 근거에서 제시되고 있으나 이를 분석하는 이론적 경험적 틀이 상대적으로 부족한 상태이다. 직업선택모델은 사회학적인 접근법이 활발하게 진행되었으나, 경제적 동인에 대극 분석이 부족하다. 본 논문에서는 2000년 미국 센서스 데이터에 나타난 가장 국제화된 미국의 과학기술직 사례를 통해 인적자본 모델을 기준으로 하여 기술직에 대한 기존의 연구와 비교한다. 이민의 직업선택모델의 관점에서 원주민의 경우와 비교하며, 동시에 타 직업군과 비교한다. 직업선택에서 미래소득에 대한 예측이 대체로 정확하나 실제의 선택이 다르다는 기존 논문들의 주장은 성간 차이의 문제를 제외하고는 현격하지 않다. 민족적 차이의 효과도 인적자본효과에 비해서는 크지 않다. 과학기술직은 고급 화이트칼라 직종에 비해 결혼과 교육 언어 경험면에서 저급한 직종의 특성을 보인다. 여성의 과학기술직 기피는 남성프리미엄이 높아서는 아니지만 합리적인 차별 때문으로 볼 수 있다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.4
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• pp.57-61
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• 2001

The {111}<112> deformation torture, which originated from the {110}<00l> texture near the surface of hot bands, is not prerequisite for the recrystallized {110}<001> Goss texture. During final annealing, surface-energy-induced selective growth of grains urn at the strip surface of 3%Si-Fe alloys containing 6ppm bulk content of sulfur. With decreasing final reduction, the probability that Goss grains survive under the highly segregated sulfur atmosphere and have a chance for later surface-energy-induced selective growth becomes higher, resulting in high magnetic induction.