• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.31 no.9A
• /
• pp.906-912
• /
• 2006

In this paper, N-shaped slot antenna for $5.15GHz{\sim}5.35GHz$ is designed, fabricated, and measured. The prototype consist of meander corrugated N-shaped slot. To obtain suitable bandwidth, the form layer is inserted between ground plane and substrate. Important parameters in the design are N-slot length, width, position, air-gap height, and feed point position. From these parameters optimized, a four N-shaped slot antenna is fabricated and measured. The measured results of the antenna are obtained as follows results. The resonant frequency of the fabrication N-shaped slot antenna is 5.25GHz bandwidth for approximately 300MHz(VSWR<2.0) and the gain is $1.3{\sim}2.64dBi$. The experimental far-field patterns are stable across the pass band. The 3dB bandwidth in H-Plane and E-Plane are $80.21^{\circ}\;and\;103.38^{\circ}$, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.2A
• /
• pp.195-201
• /
• 2004

In this paper, U-Shaped slot Bow-Tie antenna for 5.15㎓∼5.35㎓ is designed, fabricated, and measured. The prototype consist of U-Shaped slot. To obtain suitable bandwidth, the form layer is inserted between ground plane and substrate. Important parameters in the design are U-slot length, width, position, air-gap height, and feed point position. From these parameters optimized, a U-shaped slot Bow-Tie antenna is fabricated and measured. The measured results of the antenna are obtained as follows results. The resonant frequency of the Fabrication U-shaped slot Bow-Tie antenna is 5.28㎓, bandwidth for approximately 7.76％(VSWR<1.2) and the gain is 4∼7dBi. The experimental far-field patterns are stable across the pass band. The 3dB bandwidth in Elevation and Azimuth are 73.63$^{\circ}$and 65.08$^{\circ}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.218-218
• /
• 2010

유기물과 무기물이 결합한 유기물/무기물 나노복합체는 차세대 전자 소자 제작에 있어 저전력 및 높은 생산성으로 인해 유용한 소재로 각광받고 있다. 유기물/무기물 나노복합체에 사용되는 물질 중에서 코어-쉘 구조의 나노 입자를 사용한 나노복합체는 나노 입자의 쉘에 의한 메모리 특성의 변화로 인해 차세대 메모리 소자에 응용하려는 연구가 활발히 진행되고 있다. 그러나 코어-쉘 나노 입자가 분산되어 삽입된 고분자 박막 구조를 사용한 비휘발성 메모리의 쉘에 의한 메모리 특성 변화에 대한 연구는 비교적 미미하다. 본 연구에서는 CdTe-CdSe 나노 입자가 Poly(9-vinylcarbazol) (PVK) 박막에 분산된 구조를 기억층으로 사용하는 비휘발성 메모리 소자의 제작과 CdSe 쉘 층에 의한 메모리 특성의 변화에 대한 관찰을 수행하였다. 코어-쉘 나노입자에서 쉘의 역할을 알기 위하여 CdTe-CdSe 나노 입자와 CdTe 나노 입자를 각각 PVK에 톨루엔을 사용하여 녹여 나노 입자가 분산된 용액들을 제작하였다. 두 용액을 p-Si 기판 위에 스핀 코팅으로 도포한 후에 열을 가해 나노복합체를 형성하고 Al을 게이트 전극으로 증착한다. 제작된 두 가지 Al/CdTe-CdSe나노 입자＋PVK/p-Si 소자와 Al/CdTe나노 입자＋PVK/p-Si 소자는 정전용량-전압 (C-V) 측정 결과 히스테리시스 특성이 관찰되었다. CdTe-CdSe 나노 입자를 포함한 소자의 C-V 곡선의 flatband voltage shift는 0.5 V이고, CdTe 나노입자를 포함한 소자의 C-V 곡선의 flatband voltage shift는 1.1 V이다. CdTe-CdSe 나노 입자가 포함된 소자와 CdTe 나노 입자가 포함된 소자의 flatband voltage shift의 차이가 나타나는 원인에 대하여 에너지 밴드 대역도를 사용하여 설명하였다. 본 연구결과는 코어-쉘 나노 입자를 사용하는 비휘발성 메모리 소자에서 쉘에 의한 메모리 특성 변화에 대한 정보를 제공할 것이다.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.3A
• /
• pp.303-310
• /
• 2004

In this paper, L-shaped slot antenna for 5.15㎓-5.35㎓ is designed, fabricated. and measured. The prototype consist of four L-shaped slot. To obtain suitable bandwidth, the form layer is inserted between ground plane and substrate. Important parameters in the design are four L-slot length. width, position, air-gap height. and feed Point position. From these parameters optimized, a four L-shaped slot antenna is fabricated and measured. The measured results of the antenna are obtained as follows results. The resonant frequency of the fabrication four L-shaped slot antenna is 5.25㎓, bandwidth for approximately 5％(VSWR＜1.5) and the gain is 8-9㏈i. The experimental far-field patterns are stable across the pass band. The 3dB bandwidth in H-Plane and I-Plane are 69$^{\circ}$and 62$^{\circ}$, respectively.

• Korean Journal of Optics and Photonics
• /
• v.13 no.6
• /
• pp.461-466
• /
• 2002

Fiber-optic comb filters using a side-polished fiber coupler are proposed as multi-channel isolation filters on wavelength division multiplexing systems. We have demonstrated that the coupling efficiency between two waveguides is improved by the intermediate coupling layer in spite of the decrease of the optical power transfer between two waveguides due to the high-order modes of the overlay waveguide coupled with the side-polished single-mode fiber. When LiNbO$_3$with a 200-${\mu}{\textrm}{m}$-thickness was applied as a planar-overlay-waveguide, the comb filtering characteristics with a 4 nm-channel-spacing were achieved and the maximum power coupling occurred at the 1-${\mu}{\textrm}{m}$-thickness and the refractive index in range 1.52 to 1.53 of an intermediate coupling layer. If the intermediate coupling layer is optimized, an extinction ratio with more than 20 dB can be obtained. These experimental results are in good agreement with the BPM simulation.

• Journal of the Korean Applied Science and Technology
• /
• v.31 no.1
• /
• pp.83-91
• /
• 2014

In this study, we synthesized two different silica monoliths by using sol-gel, solvent exchange, surface modification, ambient pressure drying processes, and surfactant-based templating technique followed by calcination process. All of the prepared two silica monoliths showed crack-free appearance with fairly good transparency, and furthermore were confirmed to have extremely high porosity, specific surface area, and mean pore size below 30 nm. The silica aerogel sample exhibited finer and more homogeneous nano-sized pore structure due to spring back effect caused by surface modification, which resulted in better thermal insulation performance. Based on measured thermal conductivities and theoretical relationship, multi-layered glass window system in which silica monolith prepared in this study was inserted as a middle layer was revealed to have superior thermal insulation performance compared to conventional air-inserted glass window system.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.12
• /
• pp.18-23
• /
• 2000

In this paper, we propose the organic light-emitting devices with vacuum evaporated ultrathin CsF layer between the AI electrode and conjugated polymer MEH-PPV which was spin coated. In this structure, the CsF layer will be well transferred the electron injection from the electrode to the emission layer MEH-PPV. Finally this structure enhances the emission efficiency of the organic light-emitting device. And we measured the I-V-L properties with the split of CsF thickness into the $2{\AA},\;4{\AA},\;8{AA},\;10{\AA},\;20{\AA},\;50{\AA},\;75{AA}$ respectively. And also we evaporated CsF/Al, CsF/Au Cs/Au electrode respectively for the comparison. As the results, we obtained the maximum quantum efficiency 0.6% at $4{\AA}$ CsF thickness and then at $8{\AA}$, it decreased a little but it's still better than pure Al electrode which has 0.01%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.8
• /
• pp.7-12
• /
• 2010

In this paper, $C_{60}$ based Organic thin film transistor OTFTs) have been fabricated using BPhen(Bathophenanthroline) and BPhen doped with Cs interlayers between $C_{60}$ active layer and Al electrodes to improve the electrical performance. The addition of the BPhen layer resulted in enhanced performances by reducing surface roughness between organic-metal interface. And the contact resistance was reduced by using the BPhen doped with Cs interlayer with co-evaporation method. These performances suggests that the $C_{60}$ based OTFT with BPhen doped with Cs interlayer is a promising application in the fabrication of n-type organic transistors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.5
• /
• pp.782-787
• /
• 2000

The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.2
• /
• pp.67-72
• /
• 2011

8-layer printed circuit board is designed and implemented for triple band(2.3/2.5/3.5GHz) m-WiMAX system. In order to maintain excellent RF performance, low dielectric constant material is used for implementation of the printed circuit board. Also, embedded printed circuit board which embed passive devices is manufactured to reduce total system area. As a result, total system area is cut off by 9%. Triple band m-WiMAX system is produced using embedded printed circuit board. Furthermore, internet connecting test is performed and proved successful running of the system. The developed embedded printed circuit board will provide a effective solution for system area reduction and low loss signal RF communication system.