• Journal of the Korean Vacuum Society
• /
• v.7 no.3
• /
• pp.169-175
• /
• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2012.05a
• /
• pp.545-550
• /
• 2012

High Energy density metal powder has high melting point of oxide film. By this, the ignition source that can make a thermal effect of high-temperature during short time is needed to overcome ignition disturbance mechanism by oxide film. So effective ignition does not occurred with hydrocarbon ignitor, $H_2-O_2$ ignitor, high power laser. But steam plasma can be generate about 5000 K temperature field in short order. Because a steam plasma uses steam as the working gas, it is environmental-friendly and economical. Therefore in this study, we analyze steam plasma temperature field and radical species with optical emission spectroscopy method in order to apply steam plasma ignitor to metal combustion system and cloud particle ignition was identified in visual.

• Applied Chemistry for Engineering
• /
• v.27 no.1
• /
• pp.92-100
• /
• 2016

Low-temperature conversion of nitrogen oxides using plasma-assisted hydrocarbon selective catalytic reduction of (HC-SCR) was investigated. Plasma was created in the catalyst-packed bed so that it could directly interact with the catalyst. The effect of the reaction temperature, the shape of catalyst, the concentration of n-heptane as a reducing agent, the oxygen content, the water vapor content and the energy density on $NO_x$ removal was examined. $NO_x$ conversion efficiencies achieved with the plasma-catalytic hybrid process at a temperature of $250^{\circ}C$ and an specific energy input (SIE) of $42J\;L^{-1}$ were 83% and 69% for one-dimensional Ag catalyst ($Ag\;(nanowire)/{\gamma}-Al_2O_3$) and spherical Ag catalyst ($Ag\;(sphere)/{\gamma}-Al_2O_3$), respectively, whereas that obtained with the catalyst-alone was considerably lower (about 30%) even with $Ag\;(nanowire)/{\gamma}-Al_2O_3$ under the same condition. The enhanced catalytic activity towards $NO_x$ conversion in the presence of plasma can be explained by the formation of more reactive $NO_2$ species and partially oxidized hydrocarbon intermediates from the oxidation of NO and n-heptane under plasma discharge. Increasing the SIE tended to improve $NO_x$ conversion efficiency, and so did the increase in the n-heptane concentration; however, a further increase in the n-heptane concentration beyond $C_1/NO_x$ ratio of 5 did not improve the $NO_x$ conversion efficiency any more. The increase in the humidity affected negatively the $NO_x$ conversion efficiency, resulting in lowering the $NO_x$ conversion efficiency at the higher water vapor content, because water molecules competed with $NO_x$ species for the same active site. The $NO_x$ conversion efficiency increased with increasing the oxygen content from 3 to 15%, in particular at low SIE values, because the formation of $NO_2$ and partially oxidized hydrocarbon intermediates was facilitated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.133-133
• /
• 2000

알루미늄 산화막은 알루미늄 전해 커패시터의 유전재료로 많이 사용되고 잇다. 기존의 생산 공정은 양극 산화법에 의한 산화막 형성으로 대부분이 이러한 습식 공정으로 생산되고 있다. 이 양극 산화법 방식은 장점도 있으나 폐기물이 많이 발생되는 단점이 있다. 본 연구에서는 폐기물의 발생을 획기적으로 줄일 수 있고 산화막 형성 효율을 높일 수 잇는 방식으로 activated reactive evaporation(ARE)을 도입하였다. 이 방식은 electron-beam에 의해 알루미늄을 증착시킬 때 plasma를 챔버 내에 발생시켜 활성 반응으로 알루미늄 원자가 산소와 반응하여 기판위에 Al2O3가 증착되는 것이다. 이 방식은 기계적 작동이 단순하고 증착이 되는 여러 변수들의 독립적 조절이 가능하므로 증착을 제어하기 쉽기 때문에 바로 산업 현장에서 적용될 수 있을 것으로 전망되어 본 연구에 도입하게 되었다. 기판은 유전용량을 증가시키기 위하여 알루미늄 원박을 에칭하였다. 이것은 기판으로 쓰일 알루미늄의 표면의 표면적을 증가시키기 위한 것으로, 알루미늄 전극의 표면적을 확대시키면 유전용량이 증가된다. 99.4%의 50$\mu\textrm{m}$와 60$\mu\textrm{m}$ 두께의 알루미늄 원박을 Ar 이온빔에 의해 1keV의 에너지로 20mA로 에칭을 하였다. 에칭 조건별로 에칭상태를 조사하였다. 에칭 후 표면 상태는 AFM으로 관찰하였다. 화성 실험은 진공 챔버 내의 진공을 약 10-7 torr까지 내린 후, 5$\times$10-5 torr까지 O2와 Ar을 주입시킨 다음 filament에서 열전자를 방출시키고 1.2 kV의 electrode에 의해 가속시켜 이들 기체들의 플라즈마를 발생시켰다. e-beam에서 증발된 알루미늄과 활성 반응을 이루어 기판에 Al2O3가 형성되었다. 여러 증착 변수들(O2와 Ar의 분압, 가속 전압, bias 전압 등)과 산화막의 상태 등을 XPS(X-ray photoelectron spectroscopy), AFM(Atomic Force Microscopy), XRD(X-Ray Diffraction), EXD로 조사하였다.

• Transactions of the Korean hydrogen and new energy society
• /
• v.7 no.1
• /
• pp.81-92
• /
• 1996

The Ar/Ar-$H_2$ plasma method was applied to reduce oxides and refine metals of V, Ta and B. In addition, the high temperature chemical reaction in Ar plasma and of the refining reaction in the Ar-(20%)$H_2$ plasma were analyzed. The crude V of 96wt% purity was obtained at the ratio of $C/V_{2}O_{5}=4.50$ by the Ar plasma reduction grade and the maximum reduction was obtained at $C/V_{2}O_{5}=4.50$ due to the $O_{2}$ loss from the thermal decomposition of vanadium oxide. In the Ar-(20%)$H_2$ plasma refining, the metallic V of 99.2wt% was produced at the ratio of $C/V_{2}O_{5}=4.40$. It was considered that a main refining reaction resulted from the chemical reaction between the residual carbon and residual oxygen. The metallic Ta of 99.8wt% was obtained at the ratio of $C/Ta_{2}O_{5}=5.10$ in a Ar plasma reduction and the Oz loss from the thermal decomposition of tantalum pentoxide did not take place. The deoxidation reaction was more significant than the decarburization reaction in the Ar-(20%)$H_2$ plasma refining and the metallic Ta of 99.9wt% was produced within the range of $C/Ta_{2}O_{5}$ ratio of 4.50 to 5.10. The Vickers hardness of Ta in the above mentioned range was about 220Hv due to the decrease in a residual oxygen by the deoxidation reaction. On the other hand, C is no suitable agent for the reduction of $B_{2}O_{3}$ by the Ar and Ar-$H_2$ plasma. But Fe-B-Si alloy was produced with the reduction of $B_{2}O_{3}$ in the melt when Fe, C, $B_{2}O_{3}$, and ferroboron mixtures were melted by the high frequency induction melting.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2011.04a
• /
• pp.425-429
• /
• 2011

The development of metal plasma generated by high laser irradiance and its effect on the surrounding air using shadowgraph images after laser pulse termination are studied; hence the formation of laser supported detonation and combustion processes has been investigated. The core of the paper is in detecting chemical reaction using X-Ray Diffraction (XRD) between ablated aluminum plasma and oxygen from air by inducing high power laser pulse (>1000 mJ/pulse) and conduct a quantitative comparison of chemically reactive laser initiated waves with the classical detonation of exploding aluminum (dust) cloud in air. This study may suggest a new approach of initiating detonation from metal sample in its bulk form without the need of mixing nano-particles with oxygen for initiation.

• Journal of the Korea Convergence Society
• /
• v.11 no.10
• /
• pp.1-7
• /
• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Korean Journal of Materials Research
• /
• v.10 no.3
• /
• pp.212-217
• /
• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.

• Korean Chemical Engineering Research
• /
• v.45 no.2
• /
• pp.183-189
• /
• 2007

We have investigated the oxidation of gas phase elemental mercury using dielectric barrier discharge (DBD). In the DBD process, active species such as $O_3$, OH, O and $HO_2$ are generated by collisions between electrons and gas molecules. Search active species convert elemental mercury into mercury oxide which is deposited into the wall of DBD reactor because of its low vapor pressure. The oxidation efficiency of elemental mercury has been decreased from 60 to 30% by increasing the initial concentration of the elemental mercury from 72 to $655{\mu}g/Nm^3$. The gas retention time at the DBD reactor has showed the little effect on the oxidation efficiency. The more oxygen concentration has induced the more oxidation of elemental mercury, whereas there has been no appreciable oxidation within pure $N_2$ discharge. It has indicated that oxygen atom and ozone, generated in air condition determine the oxidation of elemental mercury.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.236-236
• /
• 2013

비냉각 적외선 검출기는 산업용 군사용으로 최근 각광을 받고 있다. 이는 주야간 빛이 없는 곳에서도 사물의 열을 감지할 수 있어 인체감지 및 보안감시, 에너지 절감 등에 응용될 수 있는 핵심부품이다. 비냉각 적외선 검출기로는 재료의 저항의 변화를 감지하는 마이크로볼로미터형이 가장 많이 사용된다. 감지재료로는 비정질 실리콘(a-Si)과 산화바나듐(VOx)이 가장 많이 사용된다. VOx 박막은 일반적으로 RF sputtering 방법으로 증착이 되며, 저항이 낮고, 저항의 온도변화 계수(TCR)가 크며 신호 대 잡음 특성이 우수한 반면 산소(oxygen) phase가 다양하여 갓 증착된 상태의 박막은 재현성이 떨어지는 단점이 있다. 본 연구에서는 기존의 V 타겟을 사용한 VOx 박막을 증착하는 방법을 개선하여 ZnO 나노박막을 중간에 삽입하여 저항 특성을 조절할 뿐만 아니라 열처리에 의해 TCR 값을 향상시키고, VO2 phase 가 주로 나타나는 박막 증착 및 공정 방법을 소개한다. RF sputtering 장비를 이용하여 산소와 아르곤 가스의 혼합비를 4.5로 하였으며, VOx 증착 시 플라즈마 Power는 150 W 로 하여 상온에서 증착하였다. 갓 증착된 VOx 다층박막의 XRD 스펙트럼은 V2O5 피크가 주된 상을 이루고 있었으며, 산소열처리에 의해 VO2 상이 주로 나타남을 알 수 있었다. TCR 값은 갓 증착된 샘플에서 -0.13%/K의 값을 얻었으며, $300^{\circ}C$에서 50분간 열처리 후 -3.37%/K 으로 급격히 향상됨을 알 수 있었다. 저항은 열처리 후 약 100 kohm으로 낮아져 검출소자를 위한 조건에 적합한 특성을 얻을 수 있었다. 또한 산소열처리의 온도 및 시간에 따라 TCR 및 표면 거칠기 특성을 조사하였으며, 최적의 열처리 조건을 얻고자 하였다.