• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.949-953
• /
• 2003

Blue emitting CaWO$_4$ thin films were deposited by rf magnetron sputtering. The effect of sputtering parameters and annealing conditions on the luminescent properties were investigated. Structural and stoichiometric properties of thin films were affected by $O_2$/Ar gas ratio and substrate temperature. Post-annealing caused the phosphor thin films to emit improved luminescent properties. The atomic composition of films might depend on annealing atmosphere, which resulted in the changes of luminescent properties. Blue-green emission that was due to oxygen vacancies was observed. However, by controlling oxygen defects, only blue emission could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05a
• /
• pp.96-100
• /
• 2003

평면형 자심재료용으로 응용하기 위한 Mn-Zn 페라이트에서 저손실 조성의 전자기적 특성과 분위기 조건에 따른 특성변화를 관찰하였다. $Fe_{2}O_{3}$ : MnO : ZnO 의 물비가 53 : 36 : 11 일 때, 가장 우수한 특성을 나타내었으며, $SiO_{2}$와 CaO는 입계 저항층 형성을 통한 손실은 감소시키고, 이로 인해 성능지수는 증가하여 100kHz ~ 200kHz 범위에서 최대값을 나타내어 전자기적 효율이 극대화되었다. 산소분압의 제어는 승온과정부터 산소분압을 제어시켜주어야만 Zn-loss 현상의 증가와 $Fe^{2+}$이온 농도의 감소 및 $Fe^{2+}-Fe^{3+}$ 이온간의 호핑(hoping)현상 등에 의한 손실을 최소화 할 수 있으며, 높은 투자율을 얻을 수 있었다. 그리고 소결 또는 냉각 중 평형 산소분압이 유지되지 못하면 다량의 결함이 출현하게 되고, 특히 $600^{\circ}C$이하에서 스피넬 상의 분해-산화반응이 일어나면서 미세구조 상에 결함으로 남게 되어 전자기적 특성이 저하되었다.

• Resources Recycling
• /
• v.22 no.6
• /
• pp.41-47
• /
• 2013

In this study, deoxidation of Ti scrap using liquid calcium was investigated. Experiments were conducted in a closed stainless steel chamber under Ar atmosphere during 30 to 90 minutes. Oxygen content of Ti scrap was reduced from 0.54 to 0.19 wt% by calciothermic reduction in 30 minutes at $1000^{\circ}C$ and 2.5 Ti/Ca mass ratio. By the calciothermic reduction of Ti scrap for 30 minutes under the reaction temperature of $1100^{\circ}C$ and 2.5 Ti/Ca mass, a minimum oxygen content of about 0.126 wt% in Ti scrap was obtained.

• Applied Microscopy
• /
• v.33 no.1
• /
• pp.17-23
• /
• 2003

Indium oxide ($In_2O_3$) nanowires were successfully synthesized by a simple reaction in a wet oxidizing environment at low temperature without metal catalyst. The nanowires were characterized by an x-ray diffraction (XRD), a scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS), and a transmission electron microscopy (TEM). It was shown that the $In_2O_3$ nanowires were two types of morphology, uniform nanowires and nanowires containing $In_2O_3$ nanoparticles in its stem. It was found that lengths of the nanowires were ranges of several micrometers and their diameters were around $10{\sim}250$ nm. The growth direction of the nanowires was investigated and their growth mechanism is also discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.208-208
• /
• 2010

본 연구에서는 투명전도성산화막으로 적용 가능한 Ga이 도핑된 ZnO(GZO)의 성장 및 후처리 과정에 따른 구조적, 전기적, 광학적 특성을 관찰하였다. GZO 박막은 상온과 $200^{\circ}C$, 50~250 mTorr (50 mTorr 단계)에서 RF 마그네트론 스퍼터법으로 증착하였다. 이와 같은 조건에서 성장 된 박막의 특성을 분석하여 최적의 온도 및 작업압력에서 RF power를 변화시켜 박막을 성장한 후 질소 및 수소를 이용한 후처리 공정을 통하여 GZO 박막을 제작, 각 조건에 따른 구조적, 전기적 및 광학적 특성 변화를 조사하였다. XRD 측정에서, 열처리 전 시료에서는 GZO (002) 상의 Bragg-Angle 위치가 호스트 물질 ZnO의 기준위치보다 낮은 각도 쪽에서 나타났으며, 이는 Ga이 Zn와 치환되지 못하고 격자 내에 침입형태로 존재함에 따른 것으로 판단된다. 열처리 이후 전반적으로 분위기 가스의 종류에 관계없이 결정성, 광투과율 및 전기적 특성이 향상되는 것이 관측되었다. 질소 분위기에서 열처리된 GZO 박막의 경우, 전반적으로 박막 증착 시 초기 작업압력의 증가에 따라 비저항이 증가하는 현상이 관측되었다. 반면, 수소 분위기에서 열처리된 박막에서는 박막 증착 초기 작업 압력이 증가함에 따라 비저항이 감소하는 경향이 관측되었다. 이러한 결과는 XPS(X-Ray Photoelectron Spectroscopy)로 분석한 결과, 질소 분위기에서 열처리된 GZO 박막은 O-H 결합이 Zn-O 결합에 비해 과도하지 않은 반면, 수소화 처리된 GZO 박막에서 Zn-O 결합에 비해 과도한 O-H 결합이 존재하기 때문으로 관측되었다. 그러한 이유는 O-H 결합이 GZO 박막 내 산소 결공($V_o$)과 밀접한 관계가 있기 때문이며, O-H 결합의 증가는 $V_o$-H 결합체의 증가를 의미하기 때문이다.

• Korean Journal of Materials Research
• /
• v.11 no.4
• /
• pp.290-293
• /
• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Journal of Sensor Science and Technology
• /
• v.9 no.1
• /
• pp.36-43
• /
• 2000

In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

• Journal of Sensor Science and Technology
• /
• v.5 no.1
• /
• pp.30-36
• /
• 1996

ZnO thin-film sensors were fabricated by RF magnetron sputtering method. The composition of the device material was 4 wt. % $Al_{2}O_{3}$, 1 wt. % $TiO_{2}$ and 0.2 wt. % $V_{2}O_{5}$ on the basis of ZnO material for developing the high sensitive TMA gas sensor which have an appropriate resistivity and the stability for practical use. They were also grown on the $SiO_{2}/Si$ substrates heated at $250^{\circ}C$ under a pure oxygen pressure of about 10 mTorr with a power of about 80 watts for 10 minutes. So as to enhance the stability of the resistivity, the thin films were annealed from $400^{\circ}C$ to $800^{\circ}C$. The sensors made with the thin film which were annealed at $700^{\circ}C$ for 60 minutes in pure oxygen gas exhibited a good sensing properties for TMA gas. The thin film grown at this condition showed the maximum sensitivity of 550 in TMA gas concentration of 160 ppm, and exhibited a good stability and excellent linearity.

• Journal of the Korean Ceramic Society
• /
• v.42 no.3 s.274
• /
• pp.188-192
• /
• 2005

The conversions to SiC-based ceramics of a polycarbosilane (PCS) with and without oxidation curing were carried out. A yield and an oxygen content of conversed SiC-based ceramics were evaluated. The weight losses of conversed SiC-based ceramics by both processes analyzed to estimate the high temperature stability after heat treatment at high temperature in vacuum. The yield of SiC­based ceramics after oxidation curing was higher than that without curing process. However, the weight loss of SiC-based ceramics with oxidation curing was larger than that without curing process after heat treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.6
• /
• pp.239-244
• /
• 2019

Two hydrogenation surface modifications, namely hydrogen atmosphere heat treatment and hydrogen plasma treatment, were found to lead to improved dispersion of nanodiamond (ND) seed particles and enhanced nucleation density for deposition of smooth ultrananocrystalline diamond (UNCD) film. After hydrogenation, the C-O and O-H surface functionalities on the surface of nanodiamond particles were converted to the C-H surface functionalities, and the Zeta potential was increased. As the degree of dispersion was improved, the size of nanodiamond aggregates decreased significantly and nucleation density increased dramatically. After hydrogen heat treatment at 600℃, average size of ND particles was greatly reduced from 3.5 ㎛ to 34.5 nm and a very high nucleation of ~3.9 × 10¹¹ nuclei/㎠ was obtained for the seeded Si surface.