• KIPS Transactions on Computer and Communication Systems
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• v.4 no.1
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• pp.1-4
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• 2015

This paper presents an algorithm for finding valid side chain conformations of amino acids, when given channel is transformed. The suggested algorithm implements a protein molecule with flexible side chains based on the flexibility of amino acids, and extracts adjacent amino acids that affect the formation of the channel. We detect the collision between adjacent amino acids and neighbors, in order to exclude invalid side chain conformations. Then, we construct the rotation angle combination tree to choose valid side chain conformations.

• Journal of Ginseng Research
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• v.24 no.1
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• pp.18-22
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• 2000

In previous reports we have shown that ginsenosides inhibit high threshold voltage-dependent $Ca^{2+}$ channels in neuronal cells. However, these studies did not show whether ginsenosides-induced inhibition of $Ca^{2+}$ currents discriminates among the various $Ca^{2+}$ channel subtypes, although it is known that there are at least five different $Ca^{2+}$ channel subtypes in neuronal cells. In this study we investigated the effect of ginsenosides on high threshold voltage-dependent $Ca^{2+}$ channel subtypes using their selective $Ca^{2+}$ channel blockers nimodipine (L-type), $\omega$-conotoxin GVIA (N-type), or $\omega$-agatoxin IVA (P-type) in bovine chromaffin cells. We could observe that ginsenosides inhibited high threshold voltage-dependent $Ca^{2+}$ currents in a dose-dependent manner. The $IC_{50}$/ was about 120 $\mu$g/ml. Nimodipine had no effect on ginsenosides response. However, the effect of ginsenosides on $Ca^{2+}$ currents was reduced by $\omega$-conotoxin GVIA, $\omega$-agatoxin IVA, and mixture of nimodipine, $\omega$-contoxin GVIA, and $\omega$-agatoxin IVA. These data suggest that ginsenosides are negatively coupled to three types of calcium channels in bovine chromaffin cell, including an $\omega$-conotoxin GVIA-sensitive (N-type) channel, an $\omega$-agatoxin IVA-sensitive (P-type) channel and nimodipine/$\omega$-conotoxin GVIA/$\omega$-agatoxin IVA-resistant (presumptive Q-type) channel.Q-type) channel.

• Review of KIISC
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• v.15 no.2
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• pp.54-62
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• 2005

기존의 신용카드 등이 최근에는 암호 기능을 갖춘 스마트카드로 대체되고 있다 그러나 스마트카드의 제한적인 연산기능으로 인하여 탑재되는 암호 알고리즘을 고속화하여 탑재해야 하는데, 이렇게 고속화된 암호 알고리즘은 사이드 채널 공격(Side Channel analysis)에 취약점을 갖는다. 암호 알고리즘의 동작 중에 시간차, 전자파, 전력 등 부가적으로 얻어지는 정보를 분석하는 사이드 채널 공격은 이론적으로 안전성이 증명된 알고리즘에서도 구현상의 문제로 인하여 공격이 가능하기 때문에 그 위험성이 매우 높다. 본 고에서는 2003년 신규 정보보호제품 평가대상으로 확대된 스마트 카드의 안전성 평가방안에 대하여 설명하고 스마트카드 상에서 공격 가능한 사이드 채널 공격을 타이밍 공격, 오류삽입 공격, 단순/차분 전력분석 공격으로 나누어 기술하고 이러한 공격에 대한 대응기법을 소개한다.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.16 no.4
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• pp.59-68
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• 2006

Although the cryptographic algorithms in IC chip such as smart card are secure against mathematical analysis attack, they are susceptible to side channel attacks in real implementation. In this paper, we analyze the security of smart card using a developed experimental tool which can perform power analysis attacks and fault insertion attacks. As a result, raw smart card implemented SEED and ARIA without any countermeasure is vulnerable against differential power analysis(DPA) attack. However, in fault attack about voltage and clock on RSA with CRT, the card is secure due to its physical countermeasures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.106-106
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• 2003

반도체 소자의 고집적화에 따라 채널길이와 배선선 폭은 점차 줄어들고, 이에 따라 단채널효과, 소스/드레인에서의 기생저항 증가 및 게이트에서의 RC 시간지연 증가 등의 문제가 야기되었다. 이를 해결하기 위하여 자기정렬 실리사이드화(SADS) 공정을 통해 TiSi2, CoSi2 같은 금속 실리사이드를 접촉 및 게이트 전극으로 사용하려는 노력이 진행되고 있다. 그런데 TiSi2는 면저항의 선폭의존성 때문에, 그리고 CoSi2는 실리사이드 형성시 과도한 Si소모로 인해 차세대 MOSFET소자에 적용하기에는 한계가 있다. 반면, NiSi는 이러한 문제점을 나타내지 않고 저온 공정이 가능한 재료이다. 그러나, NiSi는 실리사이드 형성시 NiSi/Si 계면의 산화와 거침성(roughness) 때문에 높은 누설 전류와 면저항값, 그리고 열적 불안정성을 나타낸다. 한편, 초고집적 소자의 배선재료로는 비저항이 낮고 electro- 및 stress-migration에 대한 저항성이 높은 Cu가 사용될 전망이다. 그러나, Cu는 Si, SiO2, 실리사이드로 확산·반응하여 소자의 열적, 전기적, 기계적 특성을 저하시킨다. 따라서 Cu를 배선재료로 사용하기 위해서는 확산방지막이 필요하며, 확산방지재료로는 Ti, TiN, Ta, TaN 등이 많이 연구되고 있다.

• The KSFM Journal of Fluid Machinery
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• v.6 no.2 s.19
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• pp.29-33
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• 2003

The periphery pump (or regenerative pump) has been generally applied in the automotive fuel pump due to their low specific speed (high heads and small flow rate) with stable performance curves. In this study, the performance prediction of side channel type periphery pumps has been developed. The prediction of the circulatory flow rate is based on the consideration of the centrifugal force field in the side-channel and in the impeller vane grooves. For the determination of performance curve (head-flow rate), momentum exchange theory is used. The effects of various geometric parameters and loss coefficients used in the performance prediction method on the head and efficiency are discussed, and the results were compared with experimental data.

• Proceedings of the KSME Conference
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• 2002.08a
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• pp.581-584
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• 2002

The periphery pump(or regenerative pump) has been generally applied in the automotive fuel pump due to their low specific speed(high heads and small flow rate) with stable performance curves. In this study, the performance prediction of side channel type periphery pumps has been developed. The prediction of the circulatory flow rate is based on the consideration of the centrifugal force field in the side-channel and in the impeller vane grooves. For the determination of performance curve(head-flow rate), momentum exchange theory is used. The effects of various geometric parameters and loss coefficients used in the performance prediction method on the head and efficiency are discussed and the results were compared with experimental data.

• 유체기계공업학회:학술대회논문집
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• 2005.12a
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• pp.378-383
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• 2005

The performances of side channel type regenerative blowers were evaluated by the blower performance test, 1-D performance prediction and CFD. The performance prediction method was modified using the results of the performance test and CFD and applied to the design of the new regenerative blowers. The major geometric parameters such as channel height, channel area and expansion angle were decided from the performance prediction method for the improved models and the predicted results were compared with CFD and experimental data. Both of the modified models showed improved efficiency at the operating condition. Especially, model3 could be possible to reduce operating rotating speed, that is benefit to noise performance, because of the high head performance at the design point. The CFD results showed that the performance of the regenerative blower was influenced by the secondary circulatory flow in the channel.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.398-403
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• 2017

본 연구에서는 gate-all-around(GAA) 수직 나노선 Field-Effect Transistor(FET)의 소스/드레인 반도체/실리사이드 접합에 존재하는 Schottky 장벽이 트랜지스터의 DC특성에 미치는 영향에 대하여 조사하였다. Non-Equilibrium Green's Function와 Poisson 방정식 기반의 시뮬레이터를 사용하여, Schottky 장벽의 위치와 높이, 그리고 채널 단면적의 크기에 따른 전류-전압 특성 곡선과 에너지 밴드 다이어그램을 통해 분석을 수행하였다. 그 결과, 드레인 단의 Schottky 장벽은 드레인 전압에 의해 장벽의 높이가 낮아져 전류에 주는 영향이 작지만, 소스 단의 Schottky 장벽은 드레인 전압과 게이트 전압으로 제어가 불가능하여 외부에서 소스 단으로 들어오는 캐리어의 이동을 방해하여 큰 DC성능 저하를 일으킨다. 채널 단면적 크기에 따른 DC특성 분석 결과로는 동작상태의 전류밀도는 채널의 폭이 5 nm 일 때까지는 유지되고, 2 nm가 되면 그 크기가 매우 작아지지만, 채널 단면적은 Schottky 장벽에 영향을 끼치지 못하였다. 본 논문의 분석 결과로 향후 7 nm technology node 에 적용될 GAA 수직 나노선 FET의 소자 구조 설계에 도움이 되고자 한다.