• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.105-112
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• 2018

This paper proposes a method for fabricating heatable glass using the conduction characteristics of metal thin films deposited on the surface of Low-e(Low emissivity) glass. The heating value of Low-e glass depends on the Joule heat caused by Low-e glass sheet resistance. Hence, its prediction and design are possible by measuring the sheet resistance of the material. In this study, silver electrodes were placed at 50 mm intervals on a soft Low-e glass sample with a low emissivity layer of 11 nm. This study measured the sheet resistance using a 4-point probe, predicted the power consumption and heating value of the Low-e glass, and confirmed the heating performance through fabrication and experience. There are two conventional methods for manufacturing heatable glass. One is a method of inserting nichrome heating wire into normal glass, and the other is a method of depositing a conductive transparent thin film on normal glass. The method of inserting nichrome heating wire is excellent in terms of the heating performance, but it damages the transparency of the glass. The method for depositing a conductive transparent thin film is good in terms of transparency, but its practicality is low because of its complicated process. This paper proposes a method for manufacturing heatable glass with the desired heating performance using Low-e glass, which is used mainly to improve the insulation performance of a building. That is by emitting a laser beam to the conductive metal film coated on the entire surface of the Low-e glass. The proposed method is superior in terms of transparency to the conventional method of inserting nichrome heating wire, and the manufacturing process is simpler than the method of depositing a conductive transparent thin film. In addition, the heat characteristics were compared according to the patterning of the surface thin film of the Low-e glass by an emitting laser and the laser output conditions suitable for Low-e glass.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.7
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• pp.1225-1232
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• 2000

This study was carried out to define the effect of electron beam irradiation on the physico-chemical characteristics of sewage sludges. The experimental evidence showed that both pH and alkalinity of irradiated sludge were generally increased as the dose of irradiation increased. It was found that the soluble protein concentration (SPC) and soluble chemical oxygen demand (SCOD) from the sludge right after electron beam irradiation at 3kGy(kilo-joule/kg) increased 2.2 times and 10 times respectively more than those sludges without electron beam treatment. This highly solubilized organics could be resulted in a good soluble substrate for the subsequent anaerobic digestion process. The specific resistance of filtration (SRF) tests showed that sludge dewaterability under electron beam irradiation at 6kGy was found to be 8.8 times higher than that of unirradiated sludge. The sludge dewaterability seemed to be directly related to the dosage of electron beam irradiation up to 10kGy. However, the efficiency of sludge dewaterability tended to be smaller with higher applied irradiation dose. In comparing treatments by different inorganic chemical conditioner with irradiated and unirradiated sludges, it appeared that the dewaterability with irradiated sludge was approximately 4-10 times better that that of unirradiated sludge. Even electron beam treatment itself could replace the result from the sludge conditioned with inorganic chemical coagulants.

• Food Science and Preservation
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• v.16 no.2
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• pp.186-191
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• 2009

An electron beam or gamma-rays(0-5 kGy) were applied to two popular commercial sprout seeds, those of radish and red cabbage, and both physiological and microbiological qualities during germination were examined. Total bacterial counts of radish and red cabbage seeds were 5.02 and 2.86 log CFU/g, respectively, and were reduced by 2-3 logs after irradiation, but nonirradiated and irradiated samples showed similar microbial populations on day 5 after germination, although day 3 levels of irradiated samples were $23{\pm}2%$ lower. Coliforms were absent in both seed types. However, they were detected from the first day of germination, and rose to 4-5 log CFU/g on the fifth day. Coliforms were reduced by about 1-2 log CFU/g in 1 kGy-irradiated samples and were absent in the samples irradiated at 3 kGy. Irradiation at 1 and 3 kGy decreased germination by about 7% and 18%, respectively. Sprout yield and length were also significantly affected by irradiation, with no apparent difference between samples treated with the electron beam and gamma-rays.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.2
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• pp.32-45
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• 2000

This paper presents the analytic derivation of the SINR, when a linear array antenna is accommodated into the cellular CDMA basestation receiver, in relation to the two major performance effecting factors in beamforming(BF) applications, i. e., the direction selectivity, which refers to the narrowness of the mainbeam width, and the direction-of-arrival(DOA) estimation accuracy. The analytically derived results are compared with the operation simulation of the receiver realized with the several BF algorithms and their agreements are confirmed, consequently verifying the correctness of the analysis and the operation simulation. In order to investigate separately the effects of the errors occurring in the direction estimation and in the interference suppression, which are the two major functional components of general BF algorithms, both the algorithms of steering BF and the minimum- variance- distortionless-response(MVDR) BF are applied to the analysis. A signal model to reflect the spatially scattering phenomenon of the RF waves entering into the .:nay antenna, which directly affects on the accuracy of the BF algorithm's direction estimation, is also suggested in this paper and applied to the analysis and the operation simulation. It is confirmed from the results that the enhancement of the direction selectivity of the away antenna is not desirable in view of both the implementation economy and the BF algorithm's robustness to the erroneous factors. Such a trade-off characteristics is significant in the sense that it can be capitalized to obtain an economic means of BF implementation that does not severely deteriorate its performance while ensuring the robustness to the erroneous effects, consequently manifesting the significance of the analysis results of this paper that can be used as a design reference in developing BF algorithms to the cellular CDMA system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.268-273
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• 2014

$Y_2O_3$ ceramic specimens were fabricated from the granular powder, obtained by spray drying process from the slurry. The slurry was prepared by mixing PVA binder, NaOH for Ph control, PEG and $Y_2O_3$ powder. The $Y_2O_3$ specimen was shaped in size of ${\phi}14mm$ and then sintered at $1650^{\circ}C$. The characteristics, microstructure, densities and plasma resistance of the $Y_2O_3$ specimens were investigated with the function of forming pressure and sintering time. $Y_2O_3$ specimens were exposed under the $CHF_3/O_2/Ar$ plasma, the dry etching treatment of specimens was carried out by the physical reaction etching of $Ar^+$ ion beam and the chemical reaction etching of $F^-$ ion decomposed from $CHF_3$. With increasing sintering time, $Y_2O_3$ specimens showed relatively high density and strong resistance in plasma etching test.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.18-24
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• 2002

n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2000.11a
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• pp.139-139
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• 2000

종이는 제조 후 시간의 경과에 따라 노화가 야기되기 시작하며 이에 수반되는 현상으로서 종이의 기계적 강도 손실 및 종이의 색 변화를 들 수 있다. 종이의 노화 현상은 주로 빛, 열, 대기 오염물질, 미생물, 곤충 및 화학약품 등의 외부 인자들에 의해 종이 내에서의 가수 분해 또는 산화작용을 발생시키며 이는 종이의 폭넓은 이용올 제한하는 중요한 원인이 되고 있다. 종이의 노화기작은 주로 산 가수분해 및 산화작용 그리고 가교결합 둥으로 해석되고 있다. 이는 종이의 주 구성요소인 셀룰로오스의 수산기가 반웅하여 카르보닐기를 형성하면 서 저분자화 되거나 산소에 의해 산화되면서 저분자화 되어 종이의 강도적 손실이 일어난다 고 보고되고 있으며 종이의 황색화(Yellowing) 현상은 주원인이 종이에 잔존하고 있는 리그 년이 빛과 열에 의해 반응하여 산화됨으로써 야기된다고 설명되고 있다. 즉, 열이나 자외선 및 가시광션의 조사로 인한 셀룰로오스 및 기타 종이 구성물의 산화에 의해 종이가 퇴색되 거나 강도가 저하되는 현상이 일어나게 된다. 특히 이러한 노화 거동은 상온의 경우에서는 펄프와 종이의 황색화가 천천히 일어나지만 옹도가 점차 올라갈수록 그 속도는 빨라진다. 종이가 노화되면서 일어나는 산화반용은 주로 대기 중의 산소와 접촉하기 쉬운 표변에서부 터 발생하기 쉽다. 열처리를 통해 표면에서의 산화 작용은 촉진되고 종이의 구성원소의 결 합에 화학적 변화가 야기된다. 이를 분석하기 위해서 모든 원소가 독특한 결합에너지를 가 지고 있다는 것에 착안 시료 표면에 특정 x-선 및 전자빔을 입사하여 방출하는 광전자의 에너지를 측정함으로써 시료 표면의 조성 및 화학적인 결합상태를 알 수 있는 ESCA ( (Electron Spectroscopy for Chemical Analysis)를 이용하였다 .. ESCA는 주로 표면 원소의 규 명 및 정량분석과 화학결합 상태의 정성, 정량 분석, 깊이에 따른 원소의 농도 분포 분석, 고분자화합물의 특성 조사, 표면 원소의 화학결합에 따른 전자상태 연구 둥에 활용되 고 있 다. 즉, 종이가 노화되면서 원소들 사이에 변화되는 결합을 이러한 에너지 분석에 의해 원소 정성분석 또는 정량분석을 하고자 하였으며, 이를 분석하여 열처리 시 종이 표면에서 일어 나는 변화를 구명하고자 하였다. 이에 따라 본 연구에서는 종이의 노화를 가속화시키는 빛, 대기오염물질, 및 기타 다른 인 자들은 배제하고 열 만을 가해 노화의 진행속도를 높인 후, 노화 진행 시 종이 표변에 일어 나는 산화작용 및 가수분해를 표면 분석 장치인 ESCA를 이용하여 종이의 주 구성원소인 탄소와 산소가 열처리 시 변하는 에너지를 측정하였다. 또한 카르복실기 정량과 종이의 pH 측정 및 X -ray Diffractometer를 이용하여 결정화도를 측정하였다. 본 연구의 결과, 시간의 경과에 따라서 탄소의 결합에너지는 분포가 C-H에서 COO-, 또는 C=O로 달라짐으로써 종 이가 산화되고 있다는 것을 알 수 있었다. 또한 이 결합에너지 분포의 변화가 펄프의 종류 에 따라서 다르게 이동함으로써 제조된 시트의 표면 산화반응이 서로 다르게 일어나고 있음 을 알 수 있었으며, 이는 사용한 펄프의 화학 조성분의 차이에 기인한 것이라 사료된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.148-148
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• 2000

지금까지 반도체 표면에 대한 연구는 주로 (1000, (111) 표면 등 낮은 밀러 지표를 가진 표면에 대해 이루어져 왔다. 이에 반해 밀러 지표가 높은 Si 면은 불안정하고, 가열하면 다른 표면, 즉 지표가 낮은 면으로 재배열하는 경향이 있는 것으로 알려져 있는데 아직 이들 높은 밀러 지표를 가진 표면에 대한 연구는 미미한 상태이다. 그러나, Si(113)면은 밀러 지표가 높으면서도 안정하기 때문에 Si(113)의 구조를 정확하게 알 수 있다면 밀러 지표가 낮은 Si 표면이 안정한 이유를 이해할 수 있을 것이다. 따라서 본 연구에서는 TOF-CAICISS 장치(Time of Flight - CoAxial Impact Collision Ion Scattering Spectroscopy) 장비와 RHEED(Reflection High Energy Electron Diffrction)를 이용하여 Si(113) 표면의 구조와 Si(113) 표면의 온도에 따른 구조 변화를 관찰하였다. TOF-CAICISS 실험결과를 보면 (3$\times$2)에서 (3$\times$1)으로 상변환하면서 Si(113) 표면에 오각형을 이루는 dimer 원자들과 adatom 원자들간의 높이차가 작아짐을 알 수 있다. RHEED 실험결과와 전산 모사 결과로부터 상온에서 Si(113)(3$\times$2) 구조를 가지다가 45$0^{\circ}C$~50$0^{\circ}C$에서 Si(113) (3$\times$1) 구조로 상변환한다는 것을 알 수 있다. 그러나, 아직 상전이 메카니즘은 명확하게 밝혀지지 않았다. 실험결과를 전산 모사와 비교함으로써 Si(113) 표면에 [33]방향으로 이온빔을 입사시켰을 경우 dabrowski 모델과 Ranke AI 모델이 적합하지 않다는 것을 알 수 있다./TEX>, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다. 결과 필름의 잔류 응력과 biaxial elastic modulus는 필름의 두께가 감소함에 따라 감소하는 경향을 나타냈으며, 같은 두께의 필름인 경우, 식각 깊이에 따른 biaxial elastic modulus 의 변화를 통해 최적의 식각 깊이를 알 수 있었다.도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.527-532
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• 2005

Ionic polymer metal composites (IPMC) are soft polymeric smart materials having large displacement at low voltage in air and water. The polymeric electrolyte actuator consists of a thin and porous membrane and metal electrodes plated on both faces, in impregnation electro-plating method. The response and actuation of actuator are governed. Among many factors governing the activation and response of IPMC actuator, the surface electrode plays an important role. In this study, the well-designed modification of electrode surface was carried out in order to improve the chemical stability well as electromechanical characteristics of the IPMC actuator. We employed Ion Beam Assisted Deposition (IBAD) method to prepare the topologically homogeneous thin surface electrode. After roughing the surface of Nafion membrane in order to get a larger surface area, the IPMC was prepared by impregnation for electro-plating and re- coating on the surface through traditional chemical deposition, followed by an additional surface treatment with high conductive metals with IBAD. It was observed that our IPMC specimen shows the enhanced surface electrical properties as well as the improved actuation and response characteristics under applied electric field.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.383-388
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• 2007

A color filter was demonstrated incorporating a patterned metal grating in a quartz substrate. The filter is created in a metal layer perforated with a symmetric two-dimensional array of circular holes, with the pitch smaller than the wavelength of the visible light. A finite-difference time-domain simulation was performed to analyze the device by investigating the effect of structural parameters like the grating height, the period, the hole size, and the refractive index of the hole-filling material on its performance. The device performance was especially optimized by controlling the refractive index of the material comprising the holes of the grating. And two different devices were fabricated by means of the e-beam direct writing with the following design parameters: the grating height of 50 nm, the two pitches of 340 nm for the red color and 260 nm for the green color. For the prepared device with the period of 340 nm, the center wavelength was 680 nm and the peak transmission 57%. And for the other device with the pitch of 260 nm, the center wavelength was 550 nm and the peak transmission was 50%. The filling of the hole with a material whose refractive index is matched to that of the substrate has led to an increase of ${\sim}15%$ in the transmission efficiency.