• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.623-626
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• 2004

The purpose of this paper is to determinate and to confirm p-n junction depth with nondestructive method by using electron beam. By measuring the critical short circuit current on the p-n junction which induced by electron beam and calculating generation range, the diffusion depth can be obtained. It ran be seen that values destructively measured by constant angle lapping and nondestructively by this study almost concur. As this result, it is purposed that diffusion depth of p-n junction can be easily measured by non-destruction. And this nondestructive method ran be recommended highly to the industrial analysis.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.260-265
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• 1993

An in-situ stress measurement interferometer is constructed and used to measure the intrinsic stress in Ti$O_2$ thin films during their growth by ion-assisted deposition. It is found that the stress increases with the momentum transferred by the ion beam to the growing film and is fairly well agreed with Windischmann's model. The variation of the stress with thickness is qualitatively explained in terms of the balance between the compressive stress produced by the ion beam and the surface diffusion determined by the surface temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.581-584
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• 2005

Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.934-937
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• 2005

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, proper chamber with high vacuum condition is necessarily required more than anything else to modify scanning electron microscope. In this study, special chamber unit using rotary pump and diffusion pump to obtain high vacuum degree was designed and manufactured and various evaluation tests fur recognize the vacuum characteristic were accomplished.

• Fire Science and Engineering
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• v.22 no.5
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• pp.43-47
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• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• Proceedings of the Korea Multimedia Society Conference
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• 2002.05d
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• pp.772-775
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• 2002

초고속 인터넷의 확산으로 인해 교육시스템이 서서히 바뀌어가고 있다. 칠판과 책, 노트, 펜을 이용한 수업이 빔 프로젝트와 컴퓨터를 통한 수업으로 대체되어가고 있고, 나아가 인터넷을 이용한 사이버 교육시스템이 점차 확산되고 있다. 사이버 교육을 통해 공간의 제약성을 무너뜨리고, 교통비와 이동 시간 등을 절약할 수 있을 뿐만 아니라 다운로드한 강의 자료를 Off-Line 상에서 반복 학습 할 수 있다는 커다란 장점이 있다. 이런 사이버 원격 교육에는 크게 3가지의 데이터, 즉 음성, 화상 및 판서 데이터가 있는데, 본 논문에서는 이 데이터들을 어떻게 하여 효율적으로 데이터를 관리할 수 있는 지, 그리고 강의 자료를 제작시 어떻게 하여 강의 제작 및 수정이 용이할지에 대해 그 구현 방안을 제안한다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.9A
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• pp.749-754
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• 2005

It is well-known that mobile communication systems are usually limited in their performance and capacity by three major impairments, which are multipath fading, delay spread and co-channel interference (CCI). OFDMA (OFDM-FDMA) system can cope with the multipath fading and delay spread easily due to the beneficial properties of OmM technology. Though OFDMA scheme avoids intra-cell interference using the orthogonality among subcarriers, the scheme contains difficulty of reducing co-channel interference. Therefore, in this paper, adaptive antenna techniques are deployed into OFDMA/TDD system to minimize the co-channel interference induced by adjacent cells and to enhance the uplink performance. For the improvement of downlink performance, we apply TxAA (Transmit Adaptive Array), a kind of transmit diversity technique, utilizing preamble symbols for training antenna may into OFDMA/TDD transmitter side. Simulation results show that the uplink and downlink performance under multipath Rayleigh fading channel improved 9dB and 7dB each compared with the case of single antenna system at target BER $10^{-3}$ .

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.2
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• pp.380-385
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• 2006

In this paper, a program that can be utilized to measure and analyze radio propagation characteristics is developed. This program is able to control the measurement instruments including spectrum analyzer through GPIB interface and analyze the measured data to yield mean excess delay and RMS delay spread. The measured path loss can be compared with theoretical value in free space or inside a tunnel. The measured and analyzed results can also be presented in the forms of graphs. As these tasks can be conducted on the spot of the measurements, this program is very helpful in performing and verifying the measurements immediately. In this thesis radio propagation characteristics with frequency bands of 2.45 and 5.8GHz in subway tunnels are measured by using the program. Path loss and delay spread in subway tunnel is measured and compared according to the form of antenna beam and LOS(Line of Sight) and N-LOS(Non-Line of Sight).

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.346-355
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• 1997

In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.