• JOURNAL OF ELECTRICAL WORLD
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• s.393
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• pp.64-67
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• 2009

• 전기산업
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• v.11 no.7
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• pp.12-15
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• 2000

• Nuclear industry
• /
• v.38 no.6
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• pp.86-86
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• 2018

• JOURNAL OF ELECTRICAL WORLD
• /
• s.447
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• pp.14-17
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• 2014

• 전기산업
• /
• v.15 no.8
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• pp.85-87
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• 2004

• 전기산업
• /
• v.15 no.10
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• pp.74-76
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• 2004

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.43-48
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• 2022

Effect of temperature/humidity (T/H) treatment conditions on the peel strength of screen-printed Ag/polyimide (PI) structures was evaluated by peeling PI films in 90° peel test. Initial peel strength was 25.99±1.47 gf/mm, and then decreased to 6.05±0.54 gf/mm after 500 h at 85℃/85% relative humidity T/H condition. And, the peeled locus was changed from Ag/PI interface to shallow cohesive inside PI near interface. X-ray photoelectron spectroscopy analysis on the peeled surfaces showed that the long-term moisture penetration into the Ag/PI interface during T/H treatment led to hydrolytic degradation of PI to form weak boundary layer inside PI near Ag/PI interface, which are responsible for large decrease in peel strength.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.59-64
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• 2022

Effects of film stack structure and peeling rate on the peel strength of screen-printed (SP) Ag/polyimide (PI) systems were investigated by a 90° peel test. When PI film was peeled at PI/SP-Ag and PI/SP-Ag/electroplated (EP) Cu structures, the peel strength was nearly constant regardless of the peeling rate. When EP Cu was peeled at EP Cu/SP-Ag/PI structure, the peel strength continuously increased as peeling rate increased. Considering uniaxial tensile test results of EP Cu/SP-Ag film with respect to loading rate, the increase of 90° plastic bending energy and peel strength was attributed to increased flow stress and toughness. On the other hand, viscoelastic PI film showed little variation of flow stress and toughness with respect to loading rate, which was assumed to result in nearly constant 90° plastic bending energy and peel strength.