• 한국세라믹학회지
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• 제41권8호
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• pp.605-609
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• 2004

다양한 금속산화물(NiO, MgO, Cr$_2$O$_3$) 첨가에 따른 ZnO 바리스터의 미세구조, 전기적, 유전적 특성을 조사하였다. 평균 결정립 크기는 NiO 첨가로 증가한 반면 Cr$_2$O$_3$ 첨가로 감소하였다 이로 인해 바리스터 전압은Cr$_2$O$_3$ 첨가시 더 높게 나타났다. 바리스터 가운데서 Cr$_2$O$_3$가 첨가된 바리스터가 비직선 지수가 40.5, 누설전류가 2.7 $\mu$A로 가장 우수한 비직선성을 나타내었으며, 유전손실도 0.0589로 비교적 낮게 나타났다.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.735-744
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• 2000

The electrical procerties and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$ (ZPCCE) based varistors were investigated in the Er$_2$O$_3$content range of 0.0 to 4.0 mol%. ZPCCE ceramics containing 2.0 mol% Er$_2$O$_3$ exhibited the highest density of 5.74 g/㎤ corresponding to 99.3% of theoretical density. The varistors with 0.5 mol% and 2.0 mol% Er$_2$O$_3$exhibited a relatively satisfying nonlinearity, which the nonlinear exponent is 40.50 and 47.15, respectively and the leakage current is 2.66 $mutextrm{A}$, respectively. Under more severe d.c. stress, such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$12h), they showed a very excellent stability, which the variation rate of the variator voltage is -0.89% and -0.15%, the variation rate of the nonlinear coefficient is -4.67% and -3.56%, and the variation rate of leakage current is -6.02% and -19.56%, respectively. It is surely bellived that ZnO-0.5 mol% Pr$_{6}$O$_{11}$-1.0 mol% CoO-0.5 mol% Cr$_2$O$_3$-x mol% Er$_2$O$_3$(x=0.5, 2.0) based varistors will be greatly contributed to develop the advanced Pr$_{6}$O$_{11}$-based ZnO varistors in future.uture. future.uture.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.667-674
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• 2000

The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.179-184
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• 2000

The I-V characteristics of $ZnO-Pr_6O_{11}-CoO-Dy_2O_3$ based varistors were investigated in the $Pr_6O_{11}/CoO$ composition ratio range of 0.5/0.5 to 1.0/1.0 and sintering temperature range of 1300 to $1350^{\circ}C$ as the basic study to develop the advanced $Pr_6O_{11}$-based ZnO varistors. All varistors except for $Pr_6O_{11}$/CoO = 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. However, the varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. The varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 of all varistors exhibited the best I-V characteristics, which the nonlinear exponent is 36.9 and the leakage current is 7.6 ${\mu}A$ Therefore, it was estimated that ZnO-$Pr_6O_{11}-CoO-Dy_2O_3$ ceramics with $Pr_6O_{11}$/CoO= 0.5/1.0 will be usefully used as varistor materials in the future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.190-195
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• 2000

The electrical properties and stability of ZPCE varistors consisted of $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics were investigated. $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$, respectively, without and with 0.5 mol% $Er_2O_3$. The varistors sintered at $1300^{\circ}C$ exhibited a better nonlinearity than that $1350^{\circ}C$. The varistors with $Er_2O_3$ of 0.5 mol% exhibited a high nonlinear exponent of 52.8. However, they easily degraded due to the low density below 85% of TD. On the other hand, the varistors sintered at $1350^{\circ}C$ without $Er_2O_3$ exhibited an extremely poor nonlinearity, but the varistors with $Er_2O_3$ of 0.5 mol% exhibited a relatively good nonlinearity, which the nonlinear exponent is 34.8 and the leakage current is $7.4\;{\mu}A$ Morever, they exhibited a very high stability, which the variation rate of varistor voltage, nonlinear exponent, and leakage current are -0.9%, -2.9%, and +2.7%, respectively, under the third stress $(0.80 V_{1mA}/90^{\circ}C/12h)$ + $(0.85 V_{1mA}/115^{\circ}C/12h)$ + $(0.90 V_{1mA}/120^{\circ}C/12h)$. Consequently, it was estimated that $ZnO-Pr_6O_{11}-CoO-Er_2O_3$ ceramics will be usefully applied to develop the advanced $Pr_6O_{11}$-based ZnO varistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.308-311
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• 1999

The varistor characteristics of $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics were investigated. $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics were sintered at $1300^{\circ}C$ and $1350^{\circ}C$in the addition range 0.0~2.0mol% $Er_2O_3$, respectively. $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics, which are added with 0.5mol% $Er_2O_3$ at $1300^{\circ}C$ and l.Omol% $Er_2O_3$ at $1350^{\circ}C$ sintering temperature, exhibited the bestexcellent varistor characteristics, namely, the nonlinear exponent was better 52.78 at $1300^{\circ}C$ thanat 13$1350^{\circ}C$ and the leakage current was better 6.57$\mu\textrm$A at $1350^{\circ}C$ than at $1300^{\circ}C$. Consequently, it is estimated that $ZnO-Pr_6O_11-CoO-Er_2O_3$-based ceramics, which $Er_2O_3$ is added in the range 0.5~l.Omol% will begin to be used as a predominant basic composition of $PR_6O_11$-based ZnO varistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.