• Journal of Digital Contents Society
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• v.10 no.2
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• pp.189-198
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• 2009

In this paper, we propose a method to improve the performance of orthogonal frequency division multiplexing (OFDM) receivers by using oversampling the received signals. Demodulation of the received OFDM signals is to detect the amplitude and phase components of the subcarriers. From the oversampled OFDM signals, we can get redundant informations in frequency domain for the data, which are different in phase but the same in amplitude. By using these properties, we can obtain signal to noise ratio (SNR) gain by the oversampling ratio compared to the receivers which sampled with symbol rate. In this paper, we propose oversampled receivers whose oversampling ratio is expanded from integer to general rational number. Through computer simulations, we show the validity of the proposed methods by comparing the performance of the receivers with nonideal band-limiting filters.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.13-18
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• 2000

The SiOxNy thin films were prepared on Si(lOO) by reactive RF sputtering method. The reactive gas ratio and the power were used as parameters for depositing SiOxNy thin fims. The properties of ${SiO_x}{N_y}$ thin tilms were investigated by XRD, XPS, refractive index and extinction coefficient analyzer (n'||'&'||'k analyzer), and FfIR. It was found by the results of the x-ray diffraction measurement that SiOxNy thin films were grown to an amorphous structure. From the results of the XPS, and the n'||'&'||'k analyzer, it was found that refractive index was intended to increase with the increasement of the relative nitrogen contents of the ${SiO_x}{N_y}$ thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.22-22
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• 1993

Tungsten silicide는 낮은 전도도, 높은 녹는점, pattern 형성에 용이함등으로 VLSI device Interconnect(Bit line)로 활발하게 이용되고 있다. 일반적으로 Tungsten silicide 는 polycide(WSi$_2$/poly-Si)구조로 사용이 되며, polycide 구조는 산화분위기에서 WSi$_2$위에 SiO$_2$막을 쉽게 형성시키는 장점이 있다. As-dep상태의 polycide를 산화시킬적에는 텅스텐 실리사이드에 존재하는 excess-silicon과 microcrystalline 구조 (grain size=3$\AA$)로 인하여 텅스텐 실리사이드 표면에 균일한 SiO$_2$가 형성이 된다. 그러나 post-anneal을 실시한 샘플 Furnace anneal ($N_2$:O$_2$유량비=2:1) 처리하면 성장된 텅스텐 실사이드 입자의 입계효과에 의하여 텅스텐 실리사이드의 표면에 SiO$_2$뿐만 아니라 WO$_3$가 형성되는 이상산화가 발생되어 공정의 어려움을 야기시키고 있다. 본 실험에서는 post anneal ($700^{\circ}C$, 30min, $N_2$ 분위기) 시킨 시편을 Implantation(As 또는 phosphorous)을 실시하여 실리사이드 표면을 비정질화 시킨후 Furnace anneal 실시하여 이상산화 발생 억제에 I/I처리가 미치는 효과를 관찰하였다. XPS를 이용하여 이상산화막 두께와 WO$_3$존재를 조사하였고, AES를 사용하여 W, Si, O 원소들이 깊이에 따라 변하는 것을 관찰하였다.

• Korean Journal of Materials Research
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• v.15 no.12
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• pp.802-808
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• 2005

The hydrogen sorption speeds of $Zr_{57}V_{36}Fe_7$ amorphous alloy and its crystallized alloys were evaluated at room temperature $Zr_{57}V_{36}Fe_7$ amorphous alloy was prepared by ball milling. The amorphous alloy was crystallized through two stages. Initially, $\alpha-Zr$ solid solution was appeared from the amorphous phase. Two cubic Laves compounds were precipitated afterwards from the remained amorphous and from excessively saturated solid solution at higher temperature. The hydrogen sorption speed of the partially crystallized alloy was higher than that of amorphous. The enhanced sorption speed of partially crystallized alloy was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation could be reduce by crystallization process resulting in the observed increase in sorption property.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.108-109
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• 2011

유기태양전지를 제작 시에 요구되는 것 중 하나는 active layer의 thermal annealing이다. Thermal thermal annealing 없이는 P3HT의 self-organization이 잘 이뤄지지 않아 비정질의 모습을 보인다. 또한 low band-gap이나 열에 취약한 물질을 사용 시에 태양전지 효율이 낮아지게 된다. 이 점을 착안하여 Active layer에 사용되는 유기용매의 solvent vapor pressure 차이를 이용하여 co-solvent가 되도록 mixing하여, co-solvent로 poly(3-hexylthiopene)(P3HT):[6,6] - phenyl $C_{61}$-butyric acid methyl ester (PCBM)를 blending 하여 active layer로 사용하였으며, 유기태양전지 디바이스 제작 결과 thermal thermal annealing 없이 2.8%까지 도달하였다. X-Ray Diffraction(XRD)과 Atomic Force Microscopy(AFM)를 통하여 P3HT의 결정화가 이루어 졌음을 확인하고 이를 통해 active layer의 thermal annealing이 없이도 P3HT의 self-organization이 이뤄짐을 알 수 있었다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1303-1304
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• 2006

본 연구에서는 ICP-CVD (inductively coupled plasma chemical vapor deposition)를 이용해 미세결정 실리콘 (nanocrystalline silicon thin film transistor, ns-Si TFT) 초기 성장 단계에 발생하는 비정질의 Incubation layer를 줄이기 위한 실험을 수행하였다. ICP-CVD를 사용하여 증착한 Si-rich $SiN_x$ Seed layer 상의 미세절정 실리콘의 성막조건을 알아보고 특성을 평가하였다. 미세결정 실리콘 박막은 Raman Spectroscopy를 이용해 분석하였다. 미세결정 실리콘의 초기 성장 단계에 발생하는 비정질 Incubation layer를 줄이기 위하여 Si-rich $SiN_x$를 Seed layer로 사용하는 것이 효과적임을 확인하였다. 또한 Si-rich $SiN_x$ 위에서의 미세결정 실리콘 표면 형태와 Seed 성장 기회의 관계를 알아보았다. 높은 전압의 수소 플라즈마 처리는 Seed 성장 기회를 늘이고, 박막의 결정화도를 높임을 확인하였다. 얇은 Incubation layer를 가지는 35nm 이하 두께의 미세결정 실리콘이 성공적으로 증착되었다. 본 연구 결과는 bottom 게이트 방식 박막 트랜지스터에 증착되는 미세결정 실리콘의 전기적 특성 향상에 유용할 것으로 판단된다.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.304-311
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• 1998

0.07%C-0.014%Ti-0.015Nb-0.005%B강 (강종 B)을 각각 TMCP처리하여 그 기계적 특성과 B의 거동을 조사하였다. Ta-B강이 Ti-Nb-B강보다 인장강도는 더 우수하였으나 충격 흡수에너지는 훨씬 더 낮았다. Ta-B강의 강도가 Ti-Nb-B강보다 더 우수한 이유는 Ta-B강에서의 Ta의 석출강화 효과가 Ti-Nb-B강에서의 Ti와 Nb의 석출강화 효과보다 더 크기 때문으로 생각된다. Ta-B강은 입내파괴, Ti-Nb-B강은 임계파괴의 파괴양상을 보여이며, Ti-Nb-B강이 Ta-B 강보다 더 큰 충격 흡수에너지를 나타내었다. TMCP에서는 항온변태시의 평형석출과는 달리 연속냉각방법을 사용하였기 때문에 B가 결정립계에 평형적 또는 비평형적으로 편석되어 준안정상으로 생각되는 연속적인 필름 형태의 붕화물을 형성한다. 또한, 냉각속도의 차이에 따라 석출물은 결정질이 되거자 비정질이 되었다. B의 함량이 많은 Ti-Nb-B강에서는 석출물이 비정질상이었다. 한편, B함량이 적은 Ta-B강에서는 B강에서는 결정립계에서 B가 관찰되지 않아는데, 이것은 결정립계에서의 B의 석출이 B의 함량에 매우 민감함을 의미하는 것이다.

• Journal of the Korean institute of surface engineering
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• v.20 no.2
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• pp.49-59
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• 1987

The properties of $Cr_2O_3-Al_2O_3-SiO_2$ composite oxide coatings on steel surface were investigated. The results obtained were as follows: The microhardness of oxide coating layer increased with increasing heat-treatment temperature and $Cr_2O_3$ content in coating layer. The hardness showed the highest value (850Hv) treated at 700$^{\circ}C$ for $SiO_2:Al_2O_3:Cr_2O_3$=1:1:4. Increasing heat-treatment temperature, corrosion current density became lower and coating layer became denser. The corrosion current density showed the lowest value $(6.5{\times}10^{-5}\;Acm^2)$ treated at 750$^{\circ}C\;for\;SiO_2:Al_2O_3:Cr_2O_3$=1:1:3. These results were explained by protective layer which was formed during heat-treatment. The bonding between matrix and coating layer is expected to be made mechanically and chemically by the inter diffusion of Ni and Fe. The composite oxide coating was formed by softening of the binder with increasing heat-treatment temperature. The strengthening of coating layer is to be resulted from the dispersion of major oxide particles.

• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.5
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• pp.475-481
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• 2021

The on-board processor of satellite Synthetic Aperture Radar(SAR) digitizes the back-scattered echoes and transmits them to the ground. As satellite SAR image of various operating conditions including broadband and high resolution is required, an enormous amount of SAR data is generated. Decimation filter is used for data compression to improve the transmission efficiency of these data. Decimation filter is implemented with the FIR(Finite Impulse Response) filter and here, the decimation ratio and tap length are constrained by resource requirements of FPGA used for implementation. This paper suggests to use a non-integer ratio decimation filter in order to optimize the data transmission efficiency. Also, it proposes a filter design method that remarkably reduces the resource constraints of the FPGA in-use via applying a polyphase filter structure. The required resources for implementing the proposed filter is analysed in this paper.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.43 no.6
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• pp.749-762
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• 2023

A depth-integrated model with an approximate Riemann solver for flux computation of the shallow water equations was applied to hydraulic jump experiments. Due to the hydraulic jump, different flow regimes occur simultaneously in a single channel. Therefore, the Weisbach resistance coefficient, which reflects flow conditions rather than the Manning roughness coefficient that is independent of depth or flow, has been employed for flow resistance. Simulation results were in good agreement with experimental results, and it was confirmed that Manning coefficients converted from Weisbach coefficients were appropriately set in the supercritical and subcritical flow reaches, respectively. Limitations of the shallow water equations that rely on hydrostatic assumptions have been revealed in comparison with hydraulic jump experiments, highlighting the need for the introduction of a non-hydrostatic shallow-water flow model.